CM600DU-24F

MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE CM600DU-24F ● IC ................................................................... 600A ● VCES .......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 110 ±0.25 36 43.8 10 13.8 11.5 (15) 20.4 10 E2 (26) (26) (26) Tc measured point 110 ±0.25 9 G2 C2E1 14.5 E1 3-M8 NUTS 4-M4 NUTS G1 65 14.5 130 20 40 E2 C1 (15) Tc measured point 4-φ6.5MOUNTING RTC 24.5 -0.5 35 -0.5 +1 +1 C2E1 E2 RTC C1 CIRCUIT DIAGRAM Feb. 2009 G1 E1 8 E2 G2 HOLES MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 1540 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W °C °C Vrms N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*3 External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = ±15V RG = 1.0Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 1.0 Limits Typ. — 6 — 1.95 2.05 — — — 6600 — — — — — 43.2 — — — 0.010 — — Max. 2 7 80 2.55 — 230 10 6 — 450 200 800 300 500 — 3.35 0.081 0.11 — 0.032 5.2 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) Tj=25°C VGE=20V 10 9.5 9 11 15 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 1200 1000 800 600 400 200 0 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 200 400 600 800 1000 1200 8.5 8 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 6 Tj = 25°C Tj = 25°C EMITTER CURRENT IE (A) 103 7 5 3 2 IC = 1200A IC = 600A IC = 240A 102 7 5 3 2 8 10 12 14 16 18 20 22 101 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) tf td(on) CAPACITANCE Cies, Coes, Cres (nF) 7 5 Cies 102 7 5 3 2 SWITCHING TIMES (ns) 3 2 102 7 5 3 2 tr Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 101 7 5 3 2 Coes VGE = 0V Cres 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–5 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 7 10–1 100 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.081K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.11K/W 10–1 7 5 3 2 7 5 3 2 3 2 102 1 7 5 3 2 Irr trr Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 10–2 Single Pulse TC = 25°C 100 7 5 3 2 101 1 10 10–3 10–1 2 3 5 7 100 2 3 5 7 101 TIME (s) EMITTER CURRENT (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 2000 4000 6000 8000 10000 IC = 600A VCC = 400V VCC = 600V GATE CHARGE QG (nC) Feb. 2009 4