CM600DU-24NF

MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE CM600DU-24NF ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 110±0.25 36 43.8 10 13.8 11.5 14.5 20.4 10 (15) 9 G2 (26) (26) (26) E2 Tc measured point (Base plate) 110±0.25 LABEL 130 C2E 20 PPS E1 3-M8 NUTS 65 4-M4 NUTS G1 14.5 40 C1 E2 (15) Tc measured point (Base plate) 4-φ6.5MOUNTING HOLES E2 G2 24.5 +1.0 –0.5 35 +1.0 –0.5 C2E1 E2 C1 G1 E1 8 CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ = 111°C*3 Pulse Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 2080 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W °C °C Vrms N•m N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = ±15V RG = 1.0Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — — — — — — — — — 1.0 Limits Typ. — 7 — 1.95 2.15 — — — 4000 — — — — — 28 — — — 0.019 — — Max. 1 8 0.5 2.65 — 140 12 2.7 — 800 180 900 350 300 — 3.35 0.06 0.11 — 0.023*3 10 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W Ω *1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) VGE = 20V 12 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 1200 1000 800 600 400 15 13 Tj = 25°C 4 VGE = 15V 3 11 2 10 200 9 0 0 2 4 6 8 10 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 10 Tj = 25°C 8 EMITTER CURRENT IE (A) 103 7 5 3 2 6 4 IC = 600A IC = 1200A IC = 240A 102 7 5 3 2 2 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 0 6 8 10 12 14 16 18 20 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 102 SWITCHING TIME (ns) Cies Conditions: VCC = 600V, VGE = ±15V, RG = 1Ω Tj = 125°C, Inductive load td(off) td(on) tf 103 7 5 3 2 101 Coes Cres 102 7 5 3 2 tr 100 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 101 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Irr trr Single Pulse TC = 25°C 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 1Ω Tj = 25°C Inductive load 23 5 7 103 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.06K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.11K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 600A 16 VCC = 400V VCC = 600V 12 8 4 0 0 1000 2000 3000 4000 5000 6000 GATE CHARGE QG (nC) Feb. 2009 4