CM600DU-24NFH

MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE CM600DU-24NFH ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 110 (8.5) 93 ±0.25 (8.5) (9) E2 G2 6 62 ±0.25 C2E1 E2 C1 15 80 G1 E1 9.25(10) (22.2) 17.5 CIRCUIT DIAGRAM 18.25 C2E1 E2 C1 4-φ6.5 MOUTING HOLES 3-M6 NUTS 14 25 18 7 14 25 18 7 14 21.5 18 TAB #110. t = 0.5 29 +1.0 –0.5 LABEL 21.2 8.5 (9) Feb. 2009 G1 E1 6 E2 G2 MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditions (Note 2) (Note 2) (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 1200 ±20 600 1200 600 1200 1500 3670 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A A A W W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Parameter Collector cutoff current (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = ±15V RG = 0.52Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) Tj = 25°C Tj = 125°C Min. — 4.5 — — — — — — — — — — — — — — — — — — — 0.52 Limits Typ. — 6 — 5.0 5.0 — — — 2700 — — — — — 28 — — — 0.02 — — — Max. 1 7.5 2.0 6.5 — 95 8.0 1.8 — 400 120 700 150 250 — 3.5 0.083 0.15 — 0.034*3 0.06*3 5.2 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W K/W Ω Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 External gate resistance *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT IC (A) Tj = 25°C 1000 800 600 400 200 0 VGE=20 (V) 14 13 15 12 VCE = 10V 1000 800 600 400 200 0 11 10 9 8 0 2 4 6 8 10 Tj = 25°C Tj = 125°C 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 9 VGE = 15V 8 Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200 10 Tj = 25°C IC = 1200A 8 6 IC = 600A 4 IC = 240A 2 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 EMITTER CURRENT IE (A) 102 Cies 103 7 5 3 2 Tj = 125°C Tj = 25°C 101 Coes Cres 102 7 5 3 2 100 101 0 1 2 3 4 5 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM600DU-24NFH HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 td(off) td(on) tf SWITCHING TIME (ns) 3 2 5 5 Irr 3 2 3 2 102 7 5 3 2 trr 102 7 5 3 2 tr Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load 23 5 7 103 102 Conditions: 5 VCC = 600V VGE = ±15V 3 RG = 1.0Ω 2 Tj = 25°C Inductive load 101 23 5 7 103 7 101 7 5 3 2 100 1 10 2 3 5 7 102 101 1 10 2 3 5 7 102 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 Rth(j–c) = 0.083K/W 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 Rth(j–c) = 0.15K/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 600A VCC = 400V 15 VCC = 600V 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25°C 7 7