CM600DU-5F

MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE CM600DU-5F ¡IC ................................................................... 600A ¡VCES ............................................................ 250V ¡Insulated Type ¡2-elements in a pack APPLICATION AC moter controll of forklift (battery power source) OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 110 E2 G2 62 ±0.25 6 C2E1 E2 C1 15 (8.25) (18.5) 4-φ6.5 MOUNTING HOLES 3-M6 NUTS C2E1 E2 C1 25 93 ±0.25 18 14 7 18 14 25 21.5 2.5 18.25 CIRCUIT DIAGRAM 7 18 14 4 2.8 7.5 8.5 0.5 0.5 0.5 0.5 29 +1.0 –0.5 21 LABEL G1 E1 G1 E1 CM 6 80 E2 G2 Mar. 2002 4 MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT (A) Tj = 25°C VGE = 1000 15V 10 800 8 600 400 200 0 6.5 6.25 VCE = 10V Tj = 25°C 1000 Tj = 125°C 800 600 400 200 0 6 5.75 5.5 5.25 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 VGE = 10V Tj = 25°C Tj = 125°C 1.6 1.2 10 Tj = 25°C 8 6 0.8 4 IC = 600A 0.4 2 IC = 1200A IC = 240A 0 0 200 400 600 800 1000 1200 0 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C Cies 103 7 5 3 2 102 7 5 3 2 102 7 5 3 2 101 7 5 3 2 Coes 101 0.6 0.8 1 1.2 1.4 1.6 1.8 Cres VGE = 0V 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2002 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 td(off) td(on) tf REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 SWITCHING TIMES (ns) 3 2 trr Irr 102 7 5 3 2 tr Conditions: VCC = 100V VGE = ±10V RG = 4.2Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 101 1 10 101 1 10 Conditions: VCC = 100V VGE = ±10V RG = 4.2Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) EMITTER CURRENT IE (A) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j– c) = 0.11°C/W 3 FWDi part: 2 Per unit base = Rth(j– c) = 0.20°C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 600A 16 VCC = 50V 12 VCC = 100V 10–1 10–1 7 5 3 2 7 5 3 2 8 10–2 10–2 Single Pulse TC = 25°C 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) 0 0 500 1000 2000 3000 4000 1500 2500 3500 4500 GATE CHARGE QG (nC) Mar. 2002 MITSUBISHI IGBT MODULES CM600DU-5F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC IC(rms) ICM IE (Note 1) IE(rms) (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current G-E Short C-E Short TC = 25°C Pulse Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight TC = 25°C Pulse TC = 25°C (Note 2) (Note 2) Conditions Ratings 250 ±20 600 350 1200 600 350 1200 1100 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A(rms) A A A(rms) A W °C °C V N•m N•m g Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V Min. — 3.0 — — — — — — — — — — — — — — — — — — Limits Typ. — 4.0 — 1.2 1.1 — — — 2200 — — — — — 20.0 — — — 0.02 — Max. 1 5.0 0.5 1.7 — 170 11 5.7 — 850 600 1100 500 300 — 2 0.11 0.20 — 0.05 Unit mA V µA V VGE = VCES, VCE = 0V Tj = 25°C Collector to emitter saturation voltage IC = 600A, VGE = 10V VCE(sat) Tj = 125°C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Reverse transfer capacitance Cres Total gate charge QG VCC = 100V, IC = 600A, VGE = 10V Turn-on delay time td(on) Turn-on rise time tr VCC = 100V, IC = 600A Turn-off delay time td(off) VGE1 = VGE2 = 10V Turn-off fall time tf RG = 4.2Ω, Inductive load switching operation trr (Note 1) Reverse recovery time IE = 600A Qrr (Note 1) Reverse recovery charge VEC(Note 1) Emitter-collector voltage IE = 600A, VGE = 0V Rth(j-c)Q IGBT part (1/2 module) *1 Thermal resistance Rth(j-c)R FWDi part (1/2 module) Contact thermal resistance Rth(c-f) Case to fin, Thermal compoundapplied*2 (1/2 module) Thermal resistance*3 Rth(j-c’)Q Tc measured point is just under the chips nF nC ns ns µC V °C/W Note 1. IE, VEC, trr, Qrr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar. 2002