CM600DY-12NF_09

MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USE CM600DY-12NF ¡IC ................................................................... 600A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 110 93±0.25 14 14 14 4 E2 G2 80 62±0.25 6 G1 E1 C2E1 E2 C1 3-M6 NUTS 25 25 21.5 4-φ6.5 MOUNTING HOLES 6 30 (20.5) 15 18 7 18 7 18 TAB #110. t=0.5 8.5 +1.0 –0.5 C2E1 E2 C1 CIRCUIT DIAGRAM G1 E1 29 LABEL 21.2 E2 G2 Feb. 2009 1 MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ = 89°C*3 Pulse Pulse TC = 25°C Conditions Ratings 600 ±20 600 1200 600 1200 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 600A, VGE = 15V VCC = 300V, IC = 600A VGE = ±15V RG = 1Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 1.0 Limits Typ. — 6 — 1.7 1.7 — — — 2400 — — — — — 8.7 — — — 0.02 — — Max. 1 7.5 0.5 2.2 — 90 11 3.6 — 500 300 750 300 250 — 2.6 0.11 0.18 — 0.046*3 10 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W Ω *1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) VGE = 20V 1000 800 600 400 15 13 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 1200 Tj = 25°C 12 4 VGE = 15V 3 11 2 10 200 0 8 0 2 4 6 8 9 10 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 10 Tj = 25°C 8 EMITTER CURRENT IE (A) 103 7 5 3 2 6 4 IC = 600A IC = 1200A 102 7 5 3 2 2 IC = 240A 0 6 8 10 12 14 16 18 20 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tf CAPACITANCE Cies, Coes, Cres (nF) 7 5 SWITCHING TIME (ns) 3 2 102 7 5 3 2 Cies 102 7 5 3 2 tr Conditions: VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 101 7 5 3 2 Coes Cres VGE = 0V 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM600DY-12NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 Irr trr Conditions: VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 25°C Inductive load 23 5 7 103 10–1 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.11K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.18K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 600A VCC = 200V 16 VCC = 300V 12 8 4 0 0 1000 2000 3000 500 1500 2500 3500 GATE CHARGE QG (nC) Feb. 2009 4