CM600DY-24A

MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE CM600DY-24A ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 14 110 93±0.25 14 14 4 E2 G2 80 62±0.25 6 G1 E1 C2E1 E2 C1 3-M6 NUTS 25 25 21.5 4-φ6.5 MOUNTING HOLES 6 30 (20.5) 11 SCREWING DEPTH 15 18 7 18 7 18 TAB #110. t=0.5 8.5 +1.0 –0.5 C2E1 E2 C1 CIRCUIT DIAGRAM G1 E1 29 LABEL 21.2 E2 G2 Feb. 2009 1 MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Conditions G-E Short C-E Short DC, TC = 78°C*1 Pulse Pulse TC = 25°C*1 (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 1200 ±20 600 1200 600 1200 3670 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A W °C °C Vrms N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = ±15V RG = 0.52Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*2 Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. — 6 — — — — — — — — — — — — — — — — — 0.52 Limits Typ. — 7 — 2.1 2.4 — — — 2700 — — — — — 19 — — — 0.018 — Max. 1 8 0.5 3.0 — 94 8 1.8 — 660 190 700 350 250 — 3.8 0.034 0.062 — 7.8 Unit mA V µA V nF nC ns ns µC V K/W Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 1200 1000 800 600 VGE = 20V 15 13 Tj = 25°C 12 4 VGE = 15V 3 2 11 400 200 0 10 9 0 2 4 6 8 10 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 7 5 10 Tj = 25°C EMITTER CURRENT IE (A) 8 3 2 103 7 5 3 2 6 IC = 1200A IC = 600A 2 IC = 240A 0 6 8 10 12 14 16 18 20 4 102 7 5 3 2 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 td(off) td(on) tf 102 Cies SWITCHING TIME (ns) 3 2 101 Coes Cres 102 tr Conditions: VCC = 600V 3 VGE = ±15V RG = 0.52Ω 2 Tj = 125°C Inductive load 101 1 10 23 5 7 102 7 5 100 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse 7 5 TC = 25°C 3 Under the chip 2 Irr trr Conditions: VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 25°C Inductive load 23 5 7 103 10–1 7 5 3 2 10–1 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.034K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.062K/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 103 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 103 7 Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 0.52Ω 2 Tj = 125°C Inductive load C snubber at bus 2 10 7 7 5 5 VGE = ±15V 3 Conditions: VCC = 600V Esw(on) IC = 600A Tj = 125°C 2 Inductive load C snubber at bus 102 7 5 3 2 Esw(on) Esw(off) Esw(off) 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 101 –1 10 2 3 5 7 100 2 3 5 7 101 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) 102 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) 5 3 2 5 3 2 Err Err 101 7 5 3 2 100 1 10 2 3 Conditions: VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 125°C Inductive load C snubber at bus 5 7 102 23 5 7 103 101 7 5 3 2 100 –1 10 Conditions: VCC = 600V VGE = ±15V IE = 600A Tj = 125°C Inductive load C snubber at bus 2 3 5 7 100 2 3 5 7 101 EMITTER CURRENT IE (A) GATE RESISTANCE RG (Ω) Feb. 2009 4 MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 600A 16 VCC = 400V VCC = 600V 12 8 4 0 0 500 1000 1500 2000 2500 3000 3500 4000 GATE CHARGE QG (nC) Feb. 2009 5