CM600HA-24A

MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CM600HA-24A ● I C … .………………….…….. 600 A ● V CES … …………..…...….. 1200 V ●Flat base Type Copper (non-plating) base plate No accessory (terminal screw) attach ●RoHS Directive compliant Single APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension 0.5 over over 3 6 to to to 3 6 30 Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2 Di1 E Tr1 E G C over 30 over 120 to 120 to 400 1 January-2011 MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) Symbol VCES VGES IC ICRM Ptot IE IERM Tj Tstg Visol (Note.1) (Note.1) Item Collector-emitter voltage Gate-emitter voltage Collector current Total power dissipation Emitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage G-E short-circuited C-E short-circuited DC, TC=80 °C TC=25 °C TC=25 °C - Conditions Rating 1200 ±20 600 1200 3670 600 Unit V V A W A °C V (Note.2) (Note.3) Pulse, Repetitive (Note.2, 4) (Note.2, 4) Pulse, Repetitive (Note.3) 1200 -40 ~ +150 -40 ~ +125 2500 Terminals to base plate, RMS, f=60 Hz, AC 1 min MECHANICAL CHARACTERISTICS Symbol Mt Mt Ms m ec Weight Flatness of base plate Mounting torque Item Main terminals Auxiliary terminals Mounting to heat sink On the centerline X, Y (Note.5) Conditions M 6 screw M 4 screw M 6 screw Limits Min. 1.96 0.98 1.96 ±0 Typ. 2.45 1.18 2.45 480 Max. 2.94 1.47 2.94 +100 Unit N·m g μm ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) Symbol ICES IGES VGE(th) VCEsat Cies Coes Cres QG td(on) tr td(off) tf VEC trr Qrr Eon Eoff Err rg RG (Note.1) (Note.1) (Note.1) (Note.1) Item Collector-emitter cut-off current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Gate charge Turn-on delay time Rise time Turn-off delay time Fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Turn-on switching energy per pulse Turn-off switching energy per pulse Reverse recovery energy per pulse Internal gate resistance External gate resistance Conditions VCE=VCES, G-E short-circuited ±VGE=VGES, C-E short-circuited IC=60 mA, VCE=10 V IC=600 A VGE=15 V (Note.6) Limits Min. 6 T j =25 °C T j =125 °C 0.52 Typ. 7 2.1 2.4 3000 3.0 19 100 66 29.5 1.0 Max. 1 1.5 8 3.0 105 9.0 2.0 660 190 700 350 3.8 250 7.8 Unit mA μA V V , VCE=10 V, G-E short-circuited VCC=600 V, IC=600 A, VGE=15 V VCC=600 V, IC=600 A, VGE=±15 V, RG=0.52 Ω, Inductive load IE=600 A (Note.6) nF nC ns , G-E short-circuited V ns μC mJ Ω Ω VCC=600 V, IE=600 A, VGE=±15 V, RG=0.52 Ω, Inductive load VCC=600 V, IC=IE=600 A, VGE=±15 V, RG=0.52 Ω, T j =125 °C, Inductive load TC=25 °C - THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Item Thermal resistance (Note.2) Conditions Junction to case, IGBT part (Note.2) Limits Min. Typ. 20 Max. 34 53 - Unit K/kW K/kW K/kW Contact thermal resistance Junction to case, FWDi part Case to heat sink, (Note.7) Thermal grease applied 2 January-2011 MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface of base plate and heat sink just under the chips. (Refer to the figure of chip location) The heat sink thermal resistance {R t h ( s - a ) } should measure just under the chips. Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. Note.4: Junction temperature (T j ) should not increase beyond T j m a x rating. Note.5: Base plate flatness measurement point is as in the following figure. -: Concave +: Convex Bottom X Y Bottom -: Concave Bottom +: Convex Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of test circuit) Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr1: IGBT, Di1: FWDi. Each mark points the center position of each chip. 3 January-2011 MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS C VGE=15 V G C shortcircuited G IC IE V Es V E Es E VEC test circuit vGE V C E s a t test circuit iE ∼ 90 % 0 0V -V GE iE t Q rr =0.5×I rr ×t r r t rr IE L oad + VCC ∼ iC 0A 90 % t Irr +V GE 0V -V GE RG vCE vGE iC 0.5×I r r 10 % 0A td ( o n ) tr t d( o ff) tf t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE IEM vEC VCC vCE ICM VCC iC iC VCC ICM vCE 0A t 0 0.1×ICM 0.1×VCC t 0 0.1×VCC 0.02×ICM t 0V t ti ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy Turn-on, Turn-off switching and Reverse recovery energy test waveforms (integral range) 4 January-2011 MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE=15 V 4 OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C 1200 VGE=20 V 1000 13 V 15 V 12 V T j =125 °C COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 3 IC (A) 800 COLLECTOR CURRENT 600 2 T j =25 °C 11 V 400 10 V 200 1 9V 0 0 2 4 6 8 10 0 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C 10 10000 FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited 8 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) IC=1200 A IC=600 A IE (A) 1000 6 T j =125 °C EMITTER CURRENT IC=240 A 4 T j =25 °C 100 2 0 6 8 10 12 14 16 18 20 10 0 1 2 3 4 5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) 5 January-2011 MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C INDUCTIVE LOAD 1000 FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C INDUCTIVE LOAD 1000 td(off) tf td(on) SWITCHING TIME (ns) 100 t r r (ns), I r r (A) Irr 100 trr tr 10 10 100 1000 10 10 100 1000 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C INDUCTIVE LOAD, PER PULSE 100 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=600 A, VGE=±15 V, T j =125 °C INDUCTIVE LOAD, PER PULSE 1000 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) Err Eoff 10 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 100 Eon Eoff Eon Err 1 10 100 1000 10 0.1 1 10 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) EXTERNAL GATE RESISTANCE RG (Ω) 6 January-2011 MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C 1000 20 GATE CHARGE CHARACTERISTICS (TYPICAL) IC=600 A, T j =25 °C 100 Cies VGE (V) 15 VCC= 4 0 0 V CAPACITANCE (nF) 10 GATE-EMITTER VOLTAGE VCC= 6 0 0 V 10 Coes 1 Cres 5 0.1 0.1 1 10 100 0 0 500 1000 1500 2000 2500 3000 3500 4000 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE CHARGE QG (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) Single pulse, TC=25°C Zth(j-c) 1 NORMALIZED TRANSIENT THERMAL IMPEDANCE 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 R t h ( j - c ) Q =34 K/kW, R t h ( j - c ) D =53 K/kW TIME (S) 7 January-2011 MITSUBISHI IGBT MODULES CM600HA-24A HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! ·Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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