CM600HA-28H

MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE A C Y - THD (2 TYP.) M E E C P D E U G B R T V - THD (2 TYP.) Q L G Z J S J N X - DIA. (4 TYP.) H K F Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HA28H is a 1400V (VCES), 600 Ampere Single IGBT Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 28 W E E G C Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 4.33 3.15 3.66±0.008 2.44±0.008 1.57 1.42 Max. 1.14 1.00 Max. 0.94 0.93 0.83 0.71 Millimeters 110.0 80.0 93.0±0.25 62.0±0.25 40.0 36.0 Max. 29.0 25.5 Max. 24.5 24 21.0 18.0 Dimensions N P Q R S T U V W X Y Z Inches 0.69 0.61 0.51 0.49 0.45 0.43 0.35 M8 Metric 0.28 0.256 Dia. M4 Metric 0.12 Millimeters 17.5 15.5 13.0 12.5 11.5 11.0 9.0 M8 7.0 Dia. 6.50 M4 3.0 Sep.1998 MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – Viso CM600HU-12H -40 to 150 -40 to 125 1400 ±20 600 1200* 600 1200* 4100 8.83~10.8 1.96~2.94 0.98~1.47 560 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m N·m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V IC = 600A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. – – 5.0 – – – – Typ. – – 6.0 3.1 2.95 3060 – Max. 2.0 0.5 8.0 4.2** – – 3.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 600A, diE/dt = –1200A/µs IE = 600A, diE/dt = –1200A/µs VCC = 800V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 6.0 Max. 120 42 24 350 700 500 500 300 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.03 0.06 0.035 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT, IC, (AMPERES) 1000 800 600 VGE = 20V 11 1000 800 600 400 200 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 15 13 1200 12 VCE = 10V Tj = 25°C Tj = 125°C 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 10 2 400 200 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 9 7 8 1 0 0 4 8 12 16 20 0 200 400 600 800 1000 1200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 103 8 IC = 1200A 102 Cies 103 6 IC = 600A 101 Coes 4 102 Cres 2 100 VGE = 0V IC = 240A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 td(off) REVERSE RECOVERY TIME, t rr, (ns) 103 Irr 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 600A SWITCHING TIME, (ns) tf td(on) 16 VCC = 600V VCC = 800V t rr 12 102 tr VCC = 800V VGE = ±15V RG = 2.1 Ω Tj = 125°C 102 101 8 di/dt = -1200A/µsec Tj = 25°C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 800 1600 2400 3200 4000 4800 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.03°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.06°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998