CM600HU-12F_09

MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE CM600HU-12F ¡IC ................................................................... 600A ¡VCES ............................................................ 600V ¡Insulated Type ¡1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 93±0.25 13.5 26 29 20.5 4–φ6.5 MOUNTING HOLES 8.5 12.55 10 9.5 19.1 62 48±0.25 17.2 6.5 G E 9 6.5 8.5 E 21.15 C CM 2–M4NUTS 18 Tc measured point 6.5 23 6 23 2–M8NUTS 4 24.35 E +1 26 –0.5 C RTC LABEL 34+1 –0.5 E G CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 600 1200 600 1200 1420 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 Unit V V A A W °C °C Vrms N•m N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 600A, VGE = 15V VCC = 300V, IC = 600A VGE = ±15V RG = 3.1Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part FWDi part Case to heat sink, Thermal compound applied*2 Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 5 — — — — — — — — — — — — — — — — — — 3.1 Limits Typ. — 6 — 1.6 1.6 — — — 3720 — — — — — 11.7 — — — 0.02 — — Max. 1 7 80 2.2 — 160 11 6.0 — 600 400 900 250 300 — 2.6 0.088 0.12 — 0.048*3 31 Unit mA V µA V nF nC ns ns µC V Contact thermal resistance Thermal resistance External gate resistance K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 1200 Tj=25°C 1000 800 600 VGE=20V 9.5 15 11 10 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 400 800 1200 9 8.5 400 200 0 8 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 7 5 5 Tj = 25°C EMITTER CURRENT IE (A) Tj = 25°C 4 3 2 103 7 5 3 2 3 IC = 1200A IC = 600A IC = 240A 2 102 7 5 3 2 1 0 6 8 10 12 14 16 18 20 101 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 td(off) td(on) tf tr Cies 102 7 5 3 2 SWITCHING TIMES (ns) 102 7 5 3 2 101 7 5 3 2 101 7 5 3 2 VGE = 0V Cres Coes Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM600HU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.088K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.12K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 103 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) 7 5 102 1 7 5 3 2 trr Irr 10–1 10–1 7 5 3 2 7 5 3 2 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C 2 3 5 7 103 10–2 10–2 Single Pulse TC = 25°C 101 1 10 2 3 5 7 102 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 600A VCC = 200V VCC = 300V 1000 2000 3000 4000 5000 GATE CHARGE QG (nC) Feb. 2009 4