CM600HU-24F

MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE CM600HU-24F ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 2–M4NUTS 110 93 ±0.25 13.5 24.5 29 21.5 2–M8NUTS 14.5 5.5 15.4 10.7 9.5 C 17.5 6.5 6.5 G E CM 18 Tc measured point 4–φ6.5MOUNTING HOLES 4 -0.5 26 +1 +1 34 -0.5 62 80 ±0.25 E 10.7 23.6 26.8 LABEL E E G CIRCUIT DIAGRAM RTC C Aug. 1999 MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE ( Note 1) IEM ( Note 1) PC ( Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 600 1200 600 1200 1900 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 600 Unit V V A A W °C °C V N•m N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Test conditions VCE = VCES, VGE = 0V IC = 60mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25°C IC = 600A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 600V, I C = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 1.0Ω, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part FWDi part Case to fin, Thermal compoundapplied*2 Tc measured point is just under the chips Min. — 5 — — — — — — — — — — — — — — — — — — 1.0 Limits Typ. — 6 — 1.8 1.9 — — — 6600 — — — — — 43.2 — — — 0.015 — — Max. 2 7 80 2.4 — 230 10 6.0 — 300 150 800 300 500 — 3.2 0.063 0.075 — 0.032V3 10 Unit mA V µA V Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td(on) tr Turn-on rise time Turn-off delay time td(off) Turn-off fall time tf trr ( Note 1) Reverse recovery time Qrr (Note 1) Reverse recovery charge VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Thermal resistance*1 Rth(j-c)R Contact thermal resistance Rth(c-f) Rth(j-c’)Q RG Thermal resistance External gate resistance nF nC ns ns µC V °C/W Ω Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 9.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VGE = 15V Tj = 25°C 2.5 Tj = 125°C 2 1.5 1 0.5 0 1200 COLLECTOR CURRENT IC (A) 1000 800 600 Tj = 25°C VGE = 20V 15 11 10 9 8.5 400 200 0 8 0 0.5 1 1.5 2 2.5 3 3.5 4 0 400 800 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 EMITTER CURRENT IE (A) 7 5 3 2 5 Tj = 25°C Tj = 25°C 4 103 3 IC = 1200A 2 IC = 600A IC = 240A 7 5 3 2 102 1 7 5 3 2 0 6 8 10 12 14 16 18 20 101 0 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 103 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Cies SWITCHING TIMES (ns) td(off) tf td(on) 102 7 5 3 2 102 7 5 3 2 tr Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 101 7 5 3 2 101 7 5 3 2 Coes Cres VGE = 0V 100 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM600HU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.07°C/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.075°C/ W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 Irr 102 7 5 3 2 trr Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 Single Pulse TC = 25°C 101 1 10 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 600A VCC = 400V VCC = 600V 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) Aug. 1999