CM600HX-24A

MITSUBISHI IGBT MODULES CM600HX-24A HIGH POWER SWITCHING USE CM600HX-24A ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Single ¡Flatbase Type / Insulated Package / Copper (non-plating) base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM 152 137 121.7 110 ±0.5 99 94.5 Dimensions in mm (3.81) 1.15 0.65 (7.4) 1.2 (3) TERMINAL t = 0.8 φ4.3 39 50 ±0.5 57.5 62 1.5 φ2.5 φ2.1 ＊Pin positions with tolerance (13.5) (13.5) 7 4-M6 NUTS 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 (14) (14) 22 17 17 12 12 6 6 47 24 48 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 ＊4.2 3.5 0 (7.75) ＊15 ＊18.8 ＊95 (102.25) ＊68.33 ＊72.14 6.5 (21.14) 0.8 A 4-φ5.5 MOUNTING HOLES 13 17 (20.5) (5.4) 12.5 (SCREWING DEPTH) 17 +1 -0.5 12.5 SECTION A φ 0.5 LABEL Tolerance otherwise specified C (47) E (24) Division of Dimension 0.5 to to to to to 3 6 30 120 400 Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2 C (48) TH1 (1) NTC TH2 (2) G1 (15) E1 (16) C (22) E (23) over over over 3 6 30 * Use both terminals (C/E) to the external connection. CIRCUIT DIAGRAM over 120 Jan. 2009 MITSUBISHI IGBT MODULES CM600HX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Tj Tstg Viso — — — — Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25°C, unless otherwise specified) Conditions G-E Short C-E Short (Note. 1) DC, TC = 90°C Collector current (Note. 4) Pulse (Note. 1, 5) Maximum collector dissipation TC = 25°C (Note. 1) Emitter current TC = 25°C (Note. 4) (Free wheeling diode forward current) Pulse Junction temperature Storage temperature Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) Base plate flatness On the centerline X, Y Torque strength Main terminals M6 screw Torque strength Mounting M5 screw Weight (Typical) Rating 1200 ±20 600 1200 3785 600 1200 –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330 Unit V A W A °C Vrms μm N·m g Note. 8: The base plate flatness measurement points are in the following figure. Heat sink side Y + – + convex ： – concave ： X – + Heat sink side Jan. 2009 2 MITSUBISHI IGBT MODULES CM600HX-24A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter (Tj = 25°C, unless otherwise specified) Conditions VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 60mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 600A, VGE = 15V IC = 600A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = ±15V, RG = 1.0Ω Inductive load (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) (IE = 600A) IE = 600A, VGE = 0V (Note. 6) Tj = 25°C Tj = 125°C Chip VEC(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG IE = 600A, VGE = 0V Module lead resistance Main terminals-chip Thermal resistance per IGBT (Note. 1) per free wheeling diode (Junction to case) Contact thermal resistance Thermal grease applied (Case to heat sink) (Note. 1) TC = 25°C Internal gate resistance TC = 125°C External gate resistance Min. — 6 — — — — — — — — — — — — — — — — — — — — — 0.7 1.4 1 Limits Typ. — 7 — 2.0 2.2 1.9 — — — 3000 — — — — — 19 2.6 2.16 2.5 0.6 — — 0.015 1 2 — Max. 1 8 0.5 2.6 — — 100 9 2 — 660 190 700 600 250 — 3.4 — — — 0.033 0.048 — 1.3 2.6 10 Unit mA V μA V nF nC ns μC V mΩ K/W (Note. 2) Ω NTC THERMISTOR PART Symbol R ΔR/R B(25/50) P25 Note.1: 2: 3: 4: 5: 6: Parameter Zero power resistance Deviation of resistance B constant Power dissipation Conditions TC = 25°C TC = 100°C, R100 = 493Ω Approximate by equation TC = 25°C (Note. 7) Min. 4.85 –7.3 — — Limits Typ. 5.00 — 3375 — Max. 5.15 +7.8 — 10 Unit kΩ % K mW Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] Jan. 2009 3 MITSUBISHI IGBT MODULES CM600HX-24A HIGH POWER SWITCHING USE Chip Location (Top view) Dimensions in mm (tolerance: ±1mm) (152) (121.7) (110) 28.2 39.2 50.2 73.9 84.9 95.9 24 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 47 (50) 23 30.0 40.5 45.2 48 Di Di Di Th 1 2 Di Di Di Tr Tr Tr Tr Tr Tr 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 85.3 21.6 29.4 40.0 50.6 74.3 96.3 0 LABEL SIDE Each mark points the center position of each chip. Tr: IGBT, Di: FWDi, Th: NTC thermistor C(Cs) C IC V VGE = 0V C(Cs) V VGE = 15V G E(Es) (62) C IE G E(Es) E E VCE(sat) test circuit VEC test circuit VGE 0V Load –VGE IE + VCC IC 90% 0% IE trr 90% +VGE 0V –VGE 0A t RG VCE VGE IC 0A td(on) tr td(off) tf Irr 10% 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 2009 4 MITSUBISHI IGBT MODULES CM600HX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) VGE = 20V 15 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1200 1000 800 600 400 200 0 Tj = 25°C 13 4 3.5 3 2.5 2 1.5 1 0.5 0 0 VGE = 15V 12 11 10 9 0 1 2 3 4 5 6 7 8 9 10 Tj = 25°C Tj = 125°C 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 104 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25°C 8 EMITTER CURRENT IE (A) 103 7 5 3 2 6 4 IC = 1200A 2 IC = 600A IC = 240A 0 6 8 10 12 14 16 18 20 102 7 5 3 2 101 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 7 5 3 2 CAPACITANCE (nF) 102 SWITCHING TIME (ns) Cies Coes tf td(off) td(on) tr 103 7 5 3 2 101 100 Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Conditions: 102 VCC = 600V 7 5 VGE = ±15V 3 RG = 1.0Ω 2 Tj = 125°C Inductive load 101 1 10 23 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Jan. 2009 5 MITSUBISHI IGBT MODULES CM600HX-24A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 104 7 Conditions: 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 7 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) VCC = 600V VGE = ±15V 3 IC = 600A Tj = 125°C 2 Inductive load 103 7 5 3 2 5 3 2 Err Eoff Eon Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 td(off) td(on) tr tf 101 7 5 3 2 102 0 10 2 3 5 7 101 2 3 5 7 102 100 1 10 GATE RESISTANCE RG (Ω) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 SWITCHING LOSS (mJ/pulse) Eon Irr trr 7 5 3 2 Eoff lrr (A), trr (ns) 102 102 7 5 3 2 101 7 5 3 2 Err 100 0 10 Conditions: VCC = 600V VGE = ±15V IC, IE = 600A Tj = 125°C Inductive load 2 3 5 7 102 101 7 5 3 2 2 3 5 7 101 100 1 10 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 7 Single pulse, 5 TC = 25°C 3 2 7 5 3 2 GATE-EMITTER VOLTAGE VGE (V) IC = 600A VCC = 400V 15 VCC = 600V 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) 10–1 10–2 7 5 3 2 Inverter IGBT part 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 GATE CHARGE QG (nC) 10–3 : Per unit base = Rth(j–c) = 0.033K/W Inverter FWDi part : Per unit base = Rth(j–c) = 0.048K/W 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) Jan. 2009 6