CM75RL-12NF

MITSUBISHI IGBT MODULES CM75RL-12NF HIGH POWER SWITCHING USE CM75RL-12NF ¡IC ..................................................................... 75A ¡VCES ............................................................ 600V ¡Insulated Type ¡7-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 11 7 13.62 40.78 12 35 12 A B U V W B (13.5) 32 6-M5 NUTS 10.75 (19.75) 12 22 23 12 23 12 23 12 12 (SCREWING DEPTH) 11.75 55 1 1 1 1 8 P 22 –0.5 16 23.2 +1 3 WP VP LABEL 120 106 ±0.5 17 17 2-φ5.5 MOUNTING HOLES UP CN N Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P UP-1 UP-2 B CN-7 CN-8 N CN-5 CN-6 U CN-3 CN-4 VP-1 VP-2 V WP-1 WP-2 W CN-1 CN-2 CIRCUIT DIAGRAM Jun. 2004 MITSUBISHI IGBT MODULES CM75RL-12NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C) INVERTER PART Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation G-E Short C-E Short DC, TC = 102°C*1 Pulse Pulse TC = 25°C Conditions Ratings 600 ±20 75 150 75 150 430 Unit V V A A A A W (Note 2) (Note 2) BRAKE PART Symbol VCES VGES IC ICM PC (Note 3) VRRM IFM Parameter Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, TC = 107°C*1 Pulse TC = 25°C Clamp diode part Clamp diode part Conditions Ratings 600 ±20 50 100 320 600 50 Unit V V A A W V A (Note 2) (COMMON RATING) Symbol Tj Tstg Viso — — — Parameter Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions Ratings –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 Unit °C °C V N•m N•m g Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Jun. 2004 MITSUBISHI IGBT MODULES CM75RL-12NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25°C) INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V VGE = VGES, VCE = 0V IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 75A, VGE = 15V VCC = 300V, IC = 75A VGE1 = VGE2 = 15V RG = 8.3Ω, Inductive load switching operation IE = 75A IE = 75A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — — — — — — — — 8.3 Limits Typ. — 7 — 1.7 1.7 — — — 300 — — — — — 1.2 — — — 0.085 — Max. 1 8 0.5 2.2 — 11.3 1.4 0.45 — 120 100 300 300 100 — 2.8 0.29 0.51 — 83 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W Ω BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 5.0mA VGE = VGES, VCE = 0V IC = 50A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 50A, VGE = 15V IF = 50A IGBT part*1 Clamp diode part*1 Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — 13 Limits Typ. — 7 — 1.7 1.7 — — — 200 — — — — Max. 1 8 0.5 2.2 — 7.5 1.0 0.3 — 2.8 0.39 0.70 130 Unit mA V µA V nF nF nF nC V °C/W °C/W Ω *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. Jun. 2004 MITSUBISHI IGBT MODULES CM75RL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 150 VGE = 20V 15 13 Tj = 25°C 12 4 VGE = 15V 3 100 11 50 10 8 0 0 2 4 6 8 9 10 2 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 10 Tj = 25°C EMITTER CURRENT IE (A) 8 5 3 2 6 102 7 5 3 2 4 IC = 75A IC = 150A 2 IC = 30A 0 6 8 10 12 14 16 18 20 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 td(off) tf 101 7 5 3 2 Cies SWITCHING TIME (ns) 102 7 5 3 2 td(on) Conditions: VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 125°C Inductive load 2 3 5 7 102 100 7 5 3 2 Coes Cres VGE = 0V 101 7 5 3 2 tr 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7 101 COLLECTOR CURRENT IC (A) Jun. 2004 MITSUBISHI IGBT MODULES CM75RL-12NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 300V VGE = ±15V 3 RG = 8.3Ω 2 Tj = 25°C Inductive load 102 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25°C 3 Under the chip 2 10–1 7 5 3 2 10–1 7 5 3 2 trr Irr 101 0 10 2 3 5 7 101 2 3 5 7 102 IGBT part: 10–2 Per unit base = 7 5 Rth(j– c) = 0.29°C/W FWDi part: 3 Per unit base = 2 Rth(j– c) = 0.51°C/W 10–3 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 101 SWITCHING LOSS (mJ/pulse) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) Conditions: VCC = 300V 5 VGE = ±15V 3 IC = 75A Tj = 125°C 2 Inductive load C snubber at bus 101 7 7 5 3 2 7 5 3 2 Esw(off) Esw(on) SWITCHING LOSS (mJ/pulse) Conditions: VCC = 300V 5 VGE = ±15V 3 RG = 8.3Ω Tj = 125°C 2 Inductive load C snubber at bus 100 7 102 Esw(off) 10–1 0 10 Esw(on) 2 3 5 7 101 2 3 5 7 102 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) 100 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 100 7 RECOVERY LOSS (mJ/pulse) RECOVERY LOSS (mJ/pulse) Err 5 3 2 5 3 2 Err Conditions: VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 125°C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 10–1 7 5 3 2 10–1 7 5 3 2 10–2 0 10 10–2 0 10 Conditions: VCC = 300V VGE = ±15V IE = 75A Tj = 125°C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) GATE RESISTANCE RG (Ω) Jun. 2004 MITSUBISHI IGBT MODULES CM75RL-12NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 75A 16 VCC = 200V VCC = 300V 12 8 4 0 0 100 200 300 400 500 GATE CHARGE QG (nC) Jun. 2004