CM75RX-24A

MITSUBISHI IGBT MODULES CM75RX-24A HIGH POWER SWITCHING USE CM75RX-24A ¡IC ..................................................................... 75A ¡VCES ......................................................... 1200V ¡7pack (3-phase Inverter + Brake) ¡Flatbase Type / Insulated Package / Copper (non-plating) base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM (20.5) Dimensions in mm 1.15 0.65 3.5 φ4.3 1.5 0.8 12.5 ＊91.2 ＊95 (102.25) (110) ＊114.06 (3.81) φ2.5 φ2.1 (7.4) LABEL 1.2 TERMINAL t = 0.8 0 (7.75) ＊15 ＊18.8 ＊30.24 ＊34.04 ＊45.48 ＊49.28 ＊60.72 ＊64.52 SECTION A 17 13 (21.14) 6.5 ＊54.2 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 (50) 17 12 6 12 35 11 10 9 8 7 36 1 2 3 4 6 5 17 12 6 39 50 ±0.5 57.5 62 77.1 ＊34.52 ＊30.72 ＊15.48 ＊11.66 13.64 14 22 39 (21.14) 0 A 6 12 13.5 20.71 8.5 17 22.86 22.86 6.5 (3) (5.4) 12.5 (SCREWING DEPTH) 17 +1 -0.5 P(35) 6-M5 NUTS 22.86 ＊Pin positions with tolerance φ 0.5 TH1(11) NTC Tolerance otherwise specified Division of Dimension 0.5 over over 3 6 30 to to to to to 3 6 30 120 400 Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2 GuP(34) B(4) EuP(33) GvP(26) EvP(25) U(1) GwP(18) TH2(10) EwP(17) V(2) W(3) GB(6) EB(5) N(36) GuN(30) EuN(29) GvN(22) EvN(21) GwN(14) EwN(13) over over 120 CIRCUIT DIAGRAM 0.8 136.9 121.7 110 ±0.5 99 94.5 ＊75.96 ＊79.76 4-φ5.5 MOUNTING HOLES (20.5) 7 Jan. 2009 MITSUBISHI IGBT MODULES CM75RX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25°C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 93°C Collector current Pulse Maximum collector dissipation TC = 25°C Emitter current TC = 25°C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 1200 ±20 75 150 500 75 150 Unit V A W A BRAKE PART Symbol VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 97°C Collector current Pulse Maximum collector dissipation TC = 25°C Repetitive peak reverse voltage TC = 25°C Forward current Pulse Rating 1200 ±20 50 100 355 1200 50 100 Unit V A W V A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) MODULE Symbol Tj Tstg Viso — — — — Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Torque strength Weight Conditions Rating –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 2.5 ~ 3.5 2.5 ~ 3.5 330 Unit °C Vrms μm N·m g Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) On the centerline X, Y M5 screw Main terminals M5 screw Mounting (Typical) Note. 8: The base plate flatness measurement points are in the following figure. Heat sink side Y + – + convex ： – concave ： X – + Heat sink side Jan. 2009 2 MITSUBISHI IGBT MODULES CM75RX-24A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter (Tj = 25°C, unless otherwise specified) Conditions VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 75A, VGE = 15V IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V VCC = 600V, IC = 75A VGE = ±15V, RG = 4.3Ω Inductive load (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) (IE = 75A) IE = 75A, VGE = 0V (Note. 6) Tj = 25°C Tj = 125°C Chip VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 75A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25°C, per switch External gate resistance Min. — 6 — — — — — — — — — — — — — — — — — — — — 4.1 Limits Typ. — 7 — 2.0 2.2 1.9 — — — 380 — — — — — 3 2.6 2.16 2.5 — — 0 — Max. 1 8 0.5 2.6 — — 11.5 1.0 0.23 — 100 50 300 600 150 — 3.4 — — 0.25 0.40 — 41 Unit mA V μA V nF nC ns μC V K/W Ω BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG IRRM(Note.3) Parameter Conditions Min. — 6 — — — — — — — — — — — — — — — 6.0 Limits Typ. — 7 — 2.0 2.2 1.9 — — — 250 — 2.6 2.16 2.5 — — 0 — Max. 1 8 0.5 2.6 — — 8.5 0.75 0.17 — 1 3.4 — — 0.35 0.63 — 62 Unit mA V μA V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 5mA, VCE = 10V Gate leakage current ±VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current IC = 50A, VGE = 15V IC = 50A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 50A, VGE = 15V VR = VRRM IF = 50A (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) nF nC mA V VFM(Note.3) Forward voltage drop Rth(j-c)Q Rth(j-c)R RGint RG IF = 50A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25°C Internal gate resistance External gate resistance K/W Ω Jan. 2009 3 MITSUBISHI IGBT MODULES CM75RX-24A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R ΔR B(25/50) P25 Parameter Zero power resistance Deviation of resistance B constant Power dissipation Conditions TC = 25°C TC = 100°C, R100 = 493Ω Approximate by equation TC = 25°C Min. 4.85 –7.3 — — Limits Typ. 5.00 — 3375 — Max. 5.15 +7.8 — 10 Unit kΩ % K mW (Note. 7) MODULE Symbol Rth(c-f) Parameter Conditions (Note. 2) Min. — Limits Typ. 0.015 Max. — Unit K/W Contact thermal resistance Thermal grease applied (Note. 1) per 1 module (Case to fin) Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150°C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] Chip Location (Top view) 89.3 96.6 97.3 100.1 22.6 34.1 45.3 55.8 79.6 0 Dimensions in mm (tolerance: ±1mm) LABEL SIDE 0 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 0 (77.1) 19.6 25.6 28.7 34.7 35 (62) (50) Tr UP Di UP Tr UN Di UN 1 Tr VP T r D i VN VP D i VN 2 3 36 Di Tr WP T r B r D i WN Th WP D i WN T r Br 4 12 11 10 9 8 7 6 5 17.3 26.8 40.8 (110) (121.7) (136.9) Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM75RX-24A HIGH POWER SWITCHING USE P V VGE = 15V GuP EuP P IC VGE = 0V GuP EuP P U VGE = 0V GuN EuN U VGE = 15V GuN EuN B IC V VGE = 15V GB EB IC N V N N P side Inverter part Tr (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) N side Inverter part Tr (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) VCE(sat) test circuit Br Tr VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP, GuN-EuN, GvN-EvN, GwN-EwN) P V VGE = 0V GuP EuP P IE VGE = 0V GuP EuP P V IF B U U VGE = 0V GuN EuN VGE = 0V GuN EuN IE N V VGE = 0V GB EB N P side Inverter part Di (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) N side Inverter part Di (example of U arm) VGE = 0V(GvP-EvP, GwP-EwP, GvN-EvN, GwN-EwN, GB-EB) VEC/VFM test circuit N Br Di VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP, GuN-EuN, GvN-EvN, GwN-EwN) Arm IE 0V Load VGE 90% 0% IE trr –VGE + +VGE 0V –VGE VCC IC 90% 0A t RG VGE VCE IC 0A td(on) tr td(off) tf Irr 10% 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM75RX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) VGE = 20V 15 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 150 125 100 75 50 25 0 Tj = 25°C 13 4 3.5 3 2.5 2 1.5 1 0.5 0 0 VGE = 15V 12 11 10 9 0 1 2 3 4 5 6 7 8 9 10 Tj = 25°C Tj = 125°C 25 50 75 100 125 150 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25°C 8 EMITTER CURRENT IE (A) 102 7 5 3 2 6 4 IC = 150A 2 IC = 75A IC = 30A 0 6 8 10 12 14 16 18 20 101 7 5 3 2 100 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 tf td(off) td(on) tr CAPACITANCE (nF) 101 Cies Coes SWITCHING TIME (ns) 102 7 5 3 2 100 10–1 Cres VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Conditions: 101 VCC = 600V 7 5 VGE = ±15V 3 RG = 4.3Ω 2 Tj = 125°C Inductive load 100 0 10 23 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) Jan. 2009 6 MITSUBISHI IGBT MODULES CM75RX-24A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 tf td(off) td(on) tr Conditions: VCC = 600V VGE = ±15V IC = 75A Tj = 125°C Inductive load 5 7 101 2 3 5 7 102 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 7 SWITCHING LOSS (mJ/pulse) 5 3 2 SWITCHING TIME (ns) 102 7 5 3 2 Eoff Err Eon Conditions: VCC = 600V VGE = ±15V RG = 4.3Ω Tj = 125°C Inductive load 2 3 5 7 101 2 3 5 7 102 100 7 5 3 2 101 7 5 3 2 100 0 10 2 3 10–1 0 10 GATE RESISTANCE RG (Ω) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 Conditions: VCC = 600V 5 VGE = ±15V 3 IC, IE = 75A Tj = 125°C 2 Inductive load 7 SWITCHING LOSS (mJ/pulse) Eon lrr (A), trr (ns) 102 7 5 3 2 trr Irr 101 7 5 3 2 Eoff Err 101 7 5 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 100 0 10 Conditions: VCC = 600V VGE = ±15V RG = 4.3Ω Tj = 25°C Inductive load 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 7 Single pulse, 5 TC = 25°C 3 2 7 5 3 2 GATE-EMITTER VOLTAGE VGE (V) IC = 75A VCC = 400V 15 VCC = 600V 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) 10–1 10–2 7 5 Inverter IGBT part : Per unit base = Rth(j–c) = 0.25K/W 3 Inverter FWDi part : Per unit base = Rth(j–c) = 0.40K/W : Per unit base = Rth(j–c) = 0.35K/W 2 Brake IGBT part 5 0 0 100 200 300 400 500 Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.63K/W 10–3 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101 TIME (s) GATE CHARGE QG (nC) Jan. 2009 7 MITSUBISHI IGBT MODULES CM75RX-24A HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part 102 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 4 VGE = 15V 3 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR CURRENT IC (A) FORWARD CURRENT IF (A) 3.5 101 7 5 3 2 Tj = 25°C Tj = 125°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FORWARD VOLTAGE VF (V) 100 Jan. 2009 8