CM75TF-28H

MITSUBISHI IGBT MODULES CM75TF-28H HIGH POWER SWITCHING USE INSULATED TYPE B D X QX QX Z - M5 THD (7 TYP.) S N G u P Eu P G v P Ev P G wP EwP P R L C N P P G u N Eu N G v N Ev N G wN EwN J U N V W A E T G F K U AA M M M M AA Y - DIA. (4 TYP.) TAB #110, t = 0.5 H V P GuP EuP U GvP EvP V GwP EwP W GwN EwN N P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75TF-28H is a 1400V (VCES), 75 Ampere Six-IGBT Module. Type CM Current Rating Amperes 75 VCES Volts (x 50) 28 GuN EuN N GvN EvN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.21 4.02 3.54±0.01 3.15±0.01 2.01 1.38 1.28 1.26 Max. 1.18 0.98 0.96 0.79 0.67 Millimeters 107.0 102.0 90.0±0.25 80.0±0.25 51.0 35.0 32.5 32.0 Max 30.0 25.0 24.5 20.0 17.0 Dimensions P Q R S T U V X Y Z AA Inches 0.57 0.55 0.47 0.43 0.39 0.33 0.30 0.24 0.22 M5 Metric 0.08 Millimeters 14.5 14.0 12.0 11.0 10.0 8.5 7.5 6.0 5.5 M5 2.0 Sep.1998 MITSUBISHI IGBT MODULES CM75TF-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E-SHORT) Gate-Emitter Voltage (C-E-SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM75TF-28H –40 to 150 –40 to 125 1400 ±20 75 150* 75 150* 600 1.47 ~ 1.96 1.47 ~ 1.96 830 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V IC = 75A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. – – 5.0 – – – – Typ. – – 6.5 3.1 2.95 383 – Max. 1.0 0.5 8.0 4.2** – – 3.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 75A, diE/dt = –150A/µs IE = 75A, diE/dt = –150A/µs VCC = 800V, IC = 75A, VGE1 = VGE2 = 15V, RG = 4.2Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.75 Max. 15 5.3 3 150 350 250 500 300 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.21 0.47 0.025 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM75TF-28H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) 120 Tj = 25oC 12 120 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 15 14 150 13 VCE = 10V Tj = 25°C Tj = 125°C 5 VGE = 15V Tj = 25°C Tj = 125°C 4 90 11 90 3 60 10 60 2 30 9 8 30 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 30 60 90 120 150 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 8 101 Cies 102 6 IC = 150A 100 Coes 4 IC = 75A 101 2 10-1 VGE = 0V IC = 30A Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Irr REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 VCC = 800V VGE = ±15V RG = 4.2 Ω Tj = 125°C 103 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 75A 16 SWITCHING TIME, (ns) 103 td(off) VCC = 600V VCC = 800V t rr 12 102 100 tf 102 td(on) 8 di/dt = -150A/µsec Tj = 25°C 4 101 101 tr 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 150 300 450 600 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM75TF-28H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.21°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.47°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998