CM75TL-24NF

MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE CM75TL-24NF ¡IC ..................................................................... 75A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 11 7 13.62 40.78 12 35 12 A B U V W B (13.5) 32 12 6-M5 NUTS 10.75 (19.75) 12 22 23 12 23 12 23 12 (SCREWING DEPTH) 11.75 55 1 1 1 1 8 P 22 –0.5 16 23.2 +1 3 WP VP LABEL 120 106 ±0.5 17 17 2-φ5.5 MOUNTING HOLES UP CN N Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P UP-1 UP-2 U CN-5 CN-6 CN-3 CN-4 VP-1 VP-2 V WP-1 WP-2 W CN-1 CN-2 B CN-7 CN-8 N NC NC NC CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC = 87°C*1 Pulse Pulse TC = 25°C Conditions Ratings 1200 ±20 75 150 75 150 520 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 Unit V V A A A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V VCC = 600V, IC = 75A VGE = ±15V RG = 4.2Ω, Inductive load IE = 75A IE = 75A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — — — — — — — — 4.2 Limits Typ. — 7 — 2.1 2.4 — — — 338 — — — — — 3 — — — 0.085 — Max. 1 8 0.5 3.0 — 11.5 1.0 0.23 — 100 50 300 350 120 — 3.8 0.24 0.36 — 63 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W Ω *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 150 VGE = 20V 15 13 Tj = 25°C 12 4 VGE = 15V 3 100 2 11 50 10 9 0 0 2 4 6 8 10 1 Tj = 25°C Tj = 125°C 0 0 50 100 150 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 10 Tj = 25°C 8 6 102 7 5 3 2 4 IC = 150A IC = 75A IC = 30A 0 6 8 10 12 14 16 18 20 2 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 101 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 td(off) tf 101 Cies SWITCHING TIME (ns) 102 7 5 3 2 100 td(on) Coes Cres 10–1 VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Conditions: 101 VCC = 600V tr 7 5 VGE = ±15V RG = 4.2Ω 3 2 Tj = 125°C Inductive load 100 0 10 23 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 600V VGE = ±15V 3 RG = 4.2Ω 2 Tj = 25°C Inductive load 102 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25°C 3 Under the chip 2 10–1 7 5 3 2 10–1 7 5 3 2 Irr trr 101 0 10 2 3 5 7 101 2 3 5 7 102 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.24K/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.36K/W 10–3 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 EMITTER CURRENT IE (A) TIME (s) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 101 7 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102 Conditions: VCC = 600V VGE = ±15V 3 IC = 75A Tj = 125°C 2 Inductive load C snubber at bus 101 Esw(off) 7 7 5 5 3 2 SWITCHING LOSS (mJ/pulse) 5 3 2 Esw(off) 100 7 Conditions: 5 10–1 0 10 VCC = 600V Esw(on) VGE = ±15V 3 RG = 4.2Ω Tj = 125°C 2 Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 SWITCHING LOSS (mJ/pulse) Esw(on) 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE (TYPICAL) 101 7 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 102 7 RECOVERY LOSS (mJ/pulse) 5 3 2 RECOVERY LOSS (mJ/pulse) 5 3 2 100 Err 10–1 0 10 Conditions: VCC = 600V 5 VGE = ±15V 3 RG = 4.2Ω Tj = 125°C 2 Inductive load C snubber at bus 7 2 3 5 7 101 2 3 5 7 102 101 7 5 3 2 Conditions: VCC = 600V VGE = ±15V IE = 75A Tj = 125°C Inductive load C snubber at bus Err 100 0 10 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) GATE RESISTANCE RG (Ω) Feb. 2009 4 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 75A 16 VCC = 400V VCC = 600V 12 8 4 0 0 100 200 300 400 500 600 GATE CHARGE QG (nC) Feb. 2009 5