CM75TU-12F

MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE CM75TU-12F ¡IC ..................................................................... 75A ¡VCES ............................................................ 600V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102 80 ±0.25 20 4–φ5.5 MOUNTING HOLES (4) CM N 11 19.1 E G P 11 E 19.1 G 11 11.85 E GuN EuN GvN EvN GwN EwN GuP EuP G 74 ±0.25 91 GvP EvP GwP EwP U V W G E G E G E 39.3 18.7 1.25 10 10 5–M4NUTS Tc measured point 2.8 10 11 20 19.1 10 20 11 10 1.25 0.5 3.05 11 4 Tc measured point P GUP 29 –0.5 +1 19.1 7.1 GVP RTC EVP GVN RTC EVN V GWP RTC EWP GWN RTC EWN W 8.1 RTC E UP U LABEL 26 G UN RTC E UN N CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE ( Note 1) IEM ( Note 1) PC ( Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ± 20 75 150 75 150 290 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M4 Mounting holes M5 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr ( Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25°C IC = 75A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 300V, I C = 75A, VGE = 15V VCC = 300V, IC = 75A VGE1 = VGE2 = 15V RG = 8.3Ω, Inductive load switching operation IE = 75A IE = 75A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied*2 (1/6 module) Tc measured point is just under the chips Min. — 5 — — — — — — — — — — — — — — — — — — 8.3 Limits Typ. — 6 — 1.6 1.6 — — — 465 — — — — — 1.4 — — — 0.11 — — Max. 1 7 20 2.2 — 20 1.4 0.75 — 100 80 300 250 150 — 2.6 0.43 0.9 — 0.34V3 83 Unit mA V µA V nF nC ns ns µC V °C/W Ω Contact thermal resistance Thermal resistance External gate resistance Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 125 100 75 Tj=25°C VGE=20V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 150 15 11 10 9.5 9 3 VGE = 15V 2.5 2 1.5 1 0.5 0 Tj = 25°C Tj = 125°C 0 50 100 150 8.5 50 25 0 8 7.5 0 0.5 1 1.5 2 2.5 3 3.5 4 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj = 25°C Tj = 25°C EMITTER CURRENT IE (A) 4 3 2 102 7 5 3 2 3 IC = 150A IC = 75A IC = 30A 2 101 7 5 3 2 1 0 6 8 10 12 14 16 18 20 100 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) tf td(on) Conditions: VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 125°C CAPACITANCE Cies, Coes, Cres (nF) 7 5 Cies SWITCHING TIMES (ns) 3 2 101 7 5 3 2 102 7 5 3 2 100 7 5 3 2 101 7 5 3 2 tr Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.43°C/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.9°C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 102 7 5 3 2 trr Irr 101 7 5 3 2 Conditions: VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 25°C 2 3 5 7 101 2 3 5 7 102 10–1 10–1 7 5 3 2 7 5 3 2 10–2 Single Pulse TC = 25°C 10–2 100 0 10 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 75A VCC = 200V VCC = 300V 100 200 300 400 500 600 700 GATE CHARGE QG (nC) Aug. 1999