CM75TU-34KA

MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE CM75TU-34KA G IC ..................................................................... 75A G VCES .......................................................... 1700V G Insulated Type G 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM N 11 21.7 E G P 11 E 21.7 G 11 14.4 E GuP EuP GvP EvP GwP EwP G G E G E G E GuN EuN GvN EvN GwN EwN 3.75 80 ±0.25 102 48.5 17 3.75 107 90 ±0.25 23 12 12 4–φ5.5 MOUNTING HOLES (4) U V W 12 5–M5NUTS Tc measured point 2.8 7.1 11 23 21.7 12 23 11 12 0.5 0.8 11 4 8.1 P GUP EUP U GUN EUN N 29 –0.5 +1 21.7 Tc measured point LABEL 26 GVP EVP V GVN EVN GWP EWP W GWN EWN CIRCUIT DIAGRAM Sep. 2001 MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 75 150 75 150 660 –40 ~ +150 –40 ~ +125 3500 2.5 ~ 3.5 2.5 ~ 3.5 680 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Test conditions VCE = VCES, VGE = 0V IC = 7.5mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 75A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1000V, IC = 75A, VGE = 15V VCC = 1000V, IC = 75A VGE1 = VGE2 = 15V RG = 4.2Ω, Inductive load switching operation IE = 75A IE = 75A, VGE = 0V, Tj = 25°C IE = 75A, VGE = 0V, Tj = 125°C IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compound applied*2 (1/6 module) Tc measured point is just under the chips Min. — 4 — — — — — — — — — — — — — — — — — — — Limits Typ. — 5.5 — 3.2 3.8 — — — 340 — — — — — 5.3 — 2.2 — — 0.09 — Max. 1 7 0.5 4.0 — 10.5 1.8 0.55 — 100 100 400 800 200 — 4.6 — 0.19 0.35 — 0.13*3 Unit mA V µA V nF nC ns ns µC V V °C/W VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Thermal resistance*1 Contact thermal resistance Thermal resistance Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Sep. 2001 MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 150 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 11 COLLECTOR CURRENT (A) Tj = 25°C VGE = 20V 15 14 12 150 125 100 75 50 25 0 VCE = 10V Tj = 25°C Tj = 125°C 125 100 75 10 9 50 25 0 8 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 10 Tj = 25°C 8 6 IC = 150A 4 IC = 75A IC = 30A 2 0 20 40 60 80 100 120 140 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C 101 7 5 3 2 Cies 102 7 5 3 2 100 7 5 3 2 Coes VGE = 0V Cres 101 1 2 3 4 5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Sep. 2001 MITSUBISHI IGBT MODULES CM75TU-34KA HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 7 5 3 2 SWITCHING TIMES (ns) tf td(off) 103 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 1000V VGE = ±15V 3 RG = 4.2Ω 2 Tj = 25°C Inductive load 102 7 5 3 2 102 101 VGE = ±15V 7 RG = 4.2Ω 5 tr 3 Tj = 125°C 2 Inductive load 100 0 10 23 5 7 101 7 5 Conditions: 3 2 VCC = 1000V td(on) Irr trr 2 3 5 7 102 101 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) EMITTER CURRENT IE (A) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j– c) = 0.19°C/W 3 FWDi part: 2 Per unit base = Rth(j– c) = 0.35°C/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 75A 16 VCC = 800V VCC = 1000V 12 10–1 10–1 7 5 3 2 7 5 3 2 8 10–2 10–2 Single Pulse TC = 25°C 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) 0 0 100 200 300 400 500 GATE CHARGE QG (nC) Sep. 2001