CM800HA-24H

MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B S - M8 THD (2 TYP.) A C E C J G Q T - DIA. (4 TYP.) H L F N Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies E D E C G E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.33±0.01 1.840 Millimeters 130.0 110.0±0.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4 1.73+0.04/–0.02 44.0+1.0/–0.5 1.46+0.04/–0.02 37.0+1.0/–0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM800HA-24H is a 1200V (VCES), 800 Ampere Single IGBT Module. Type CM Current Rating Amperes 800 VCES Volts (x 50) 24 Sep.1998 MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – Viso CM800HA-24H –40 to +150 –40 to +125 1200 ±20 800 1600* 800 1600* 4800 8.83 ~ 10.8 1.96 ~ 2.94 0.98 ~ 1.47 1600 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m N·m Grams Vrms Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 80mA, VCE = 10V IC = 800A, VGE = 15V IC = 800A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 800A, VGE = 15V IE = 800A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.7 2.4 4500 – Max. 5.0 0.5 7.5 3.6 – – 3.5 Units mA µA Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 800A, diE/dt = –1600A/µs IE = 800A, diE/dt = –1600A/µs VCC = 600V, IC = 800A, VGE1 = VGE2 = 15V, RG = 3.3Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 5.9 Max. 180 64 36 500 1200 1000 350 250 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.026 0.058 0.018 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC VGE = 20V 1600 15 12 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 1200 1200 4 11 3 800 10 800 2 400 7 9 8 400 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 400 800 1200 1600 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25°C Tj = 25°C IC = 1600A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 103 8 103 102 Cies 6 IC = 800A 4 102 Coes 101 2 IC = 320A VGE = 0V Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 100 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, t rr, (ns) 103 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 800A VCC = 400V 16 SWITCHING TIME, (ns) 103 td(off) t d(on) tf 102 t rr Irr 12 102 VCC = 600V 102 tr VCC = 600V VGE = ±15V RG = 4.2Ω Tj = 125°C 8 di/dt = -1600A/µsec Tj = 25°C 4 101 101 102 COLLECTOR CURRENT IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 1 2 3 4 5 6 GATE CHARGE, QG, (µC) Sep.1998 MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.026°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.058°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998