CM800HA-50H

MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HA-50H q IC ................................................................... 800A q VCES ....................................................... 2500V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS 20 E C C 124±0.25 140 40 C E G C CM E E C E G CIRCUIT DIAGRAM 3 - M4 NUTS 10.35 10.65 48.8 61.5 18 6 - φ 7 MOUNTING HOLES 15 40 5.2 38 28 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 Mar. 2003 30 MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 80°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 2500 ±20 800 1600 800 1600 6900 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 80mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1250V, IC = 800A, VGE = 15V VCC = 1250V, IC = 800A VGE1 = VGE2 = 15V RG = 3.75Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = –1600A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.20 3.60 80 8.8 2.7 3.6 — — — — 2.90 — 170 — — 0.008 Max 10 7.5 0.5 4.16 — — — — — 1.60 2.00 2.50 1.00 3.77 1.20 — 0.018 0.036 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1600 VCE = 10V COLLECTOR CURRENT IC (A) Tj = 25°C VGE = 12V VGE = 11V 1200 VGE = 13V 1200 VGE = 14V VGE = 15V VGE = 20V 800 VGE = 10V 800 400 VGE = 9V VGE = 8V VGE = 7V 10 8 400 Tj = 25°C Tj = 125°C 0 0 4 8 12 16 20 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 5 VGE = 15V 4 8 IC = 1600A 6 IC = 800A 4 3 2 1 Tj = 25°C Tj = 125°C 0 400 800 1200 1600 2 IC = 320A 0 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 VGE = 0V, Tj = 25°C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 101 7 5 3 2 Cies 4 3 2 Coes Cres 1 Tj = 25°C Tj = 125°C 0 400 800 1200 1600 0 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIMES (µs) 3 2 td(off) 100 7 5 3 2 td(on) tr tf 100 7 5 3 2 10–1 7 5 trr Irr 103 7 5 3 2 102 7 5 10–1 VCC = 1250V, VGE = ±15V RG = 3.75Ω, Tj = 125°C 7 Inductive load 5 5 7 102 23 5 7 103 23 5 5 7 102 23 5 7 103 23 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2.0 VCC = 1250V, VGE = ±15V, RG = 3.75Ω, Tj = 125°C, 1.6 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 2.5 2.0 1.5 1.0 0.5 0 1.2 Eon 0.8 Eoff 0.4 Erec 0 0 200 400 600 800 1000 0 5 10 15 20 25 30 CURRENT (A) GATE RESISTANCE (Ω) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) Mar. 2003 VCC = 1250V IC = 800A 16 Single Pulse TC = 25°C Rth(j – c)Q = 0.018K/W Rth(j – c)R = 0.036K/W 12 8 4 0 0 1000 2000 3000 4000 5000 GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1250V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 3.75Ω 2