CM900DU-24NF

MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF ● IC ................................................................... 900A ● VCES .......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N Tc measured point (The side of Cu base plate) 150 137.5±0.25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 21 11 19 38±0.25 42.5±0.25 38±0.25 74±0.25 74±0.25 34.6 +1.0 –0.5 4 15.7 A G1 E1 G2 E2 C1 8-f6.5 MOUNTING HOLES PPS E2 C1 10.5 B 15.7 5.5 18 129.5 166 9-M6 NUTS 12 14 14 14 14 14 14 42 42 25.1 LABEL C2 C2E1 E2 C1 C1 CIRCUIT DIAGRAM Feb. 2009 1 G1 E1 E2 G2 C2E1 C2 1.9 ±0.2 34.6 +1.0 –0.5 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature*4 Isolation voltage Torque strength Weight G-E Short C-E Short TC’ = 96°C*1 Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 900 1800 900 1800 2550 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 Unit V V A A W °C °C Vrms N•m N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) (chip) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage (without lead resistance) Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage (without lead resistance) Thermal resistance*3 Contact thermal resistance*2 Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 90mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 900A, VGE = 15V Ic = 900A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 900A, VGE = 15V VCC = 600V, IC = 900A VGE = ±15V RG = 0.35Ω, Inductive load IE = 900A (Note 4) Tj = 25°C Tj = 125°C Min. — 6 — — — — — — — — — — — — — — — — — — — — 0.35 Limits Typ. — 7 — 1.8 2.0 0.286 — — — 4800 — — — — — 50 — — — 0.016 — — — Max. 1 8 1 2.5 — — 140 16 3 — 600 200 800 300 500 — 3.2 0.049 0.078 — 0.021 0.034 2.2 Unit mA V µA V mΩ nF nC R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) (chip) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG ns ns µC V IE = 900A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under the chips (IGBT part) Case temperature measured point is just under the chips (FWDi part) K/W External gate resistance Ω Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *4 : The operation temperature is restrained by the permission temperature of female connector. Feb. 2009 2 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1800 VGE = 20V 15V 13V Tj = 25°C 12V 1800 VCE = 10V 1600 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 1600 1400 1200 1000 800 600 400 200 0 0 2 COLLECTOR CURRENT (A) 1400 1200 1000 800 600 400 200 0 0 4 8 12 Tj = 25°C Tj = 125°C 16 20 11V 10V 8V 4 6 8 9V 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V Tj = 25°C 4 8 3 6 IC = 900A 4 IC = 1800A 2 IC = 360A 0 6 8 10 12 14 16 18 20 2 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 1000 1200 1400 1600 1800 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) 104 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 102 Cies 103 7 5 3 2 101 Coes 100 Cres Tj = 25°C Tj = 125°C 0 1 2 3 4 102 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 td(off) tf td(on) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 SWITCHING TIMES (ns) 3 2 Irr trr 102 VCC = 600V tr 3 VGE = ±15V RG = 0.35Ω 2 Tj = 125°C Inductive load 101 1 10 23 5 7 102 7 Conditions: 5 102 7 5 3 2 2 3 5 7 103 101 1 10 Conditions: VCC = 600V VGE = ±15V RG = 0.35Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) EMITTER CURRENT IE (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) Single Pulse IGBT part: Per unit base = Rth(j–c’) = 0.021K/ W FWDi part: 0 Per unit base = Rth(j–c’) = 0.034K/ W 10 7 5 3 2 7 5 3 2 IC = 900A 16 VCC = 400V VCC = 600V 3 2 12 10–1 7 5 3 2 7 5 TC measured 3 point is just 2 under the chips 10–1 7 5 3 2 7 5 3 2 8 10–2 10–2 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 0 0 1000 2000 3000 4000 5000 6000 7000 GATE CHARGE QG (nC) IC-ESW (TYPICAL) 103 7 Conditions: 5 VCC = 600V 3 VGE = ±15V 2 Tj = 125°C RG-ESW (TYPICAL) 103 7 5 Eon, Eoff, Err (mJ/pulse) 102 RG = 0.35Ω 7 Inductive load 5 3 2 Eon Err Eoff Eon, Eoff, Err (mJ/pulse) 3 2 Eon 102 Conditions: VCC = 600V 3 VGE = ±15V Tj = 125°C 2 IC = 900A Inductive load 101 0 0.5 1 7 5 Eoff Err 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 1.5 RG (Ω) 2 2.5 IC (A) Feb. 2009 4