CR02AM

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE CR02AM OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm 2 VOLTAGE CLASS TYPE NAME 3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 1.25 1.25 1.3 12.5 MIN 1 5.0 MAX 0.47 0.3 10 0.4 0.1 0.01 6 6 0.1 0.23 132 • IT (AV) ........................................................................ 0.3A • VDRM .................................................... 200V/300V/400V • IGT ......................................................................... 100µ A JEDEC : TO-92 APPLICATION Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher, other general purpose control applications MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 4 200 300 160 200 160 6 300 400 240 300 240 8 400 500 320 400 320 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Ta=30° C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value –40 ~ +125 –40 ~ +125 V1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 3.9 MAX Unit V V V V V Unit A A A A2s W W V V A °C °C g MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125°C, V RRM applied Tj=125°C, V DRM applied, RGK=1k Ω Ta=25°C, I TM=0.6A, instantaneous value Ta=25°C, V D =6V, IT =0.1A V3 Tj=125°C, VD=1/2VDRM, RGK=1k Ω Tj=25 °C, VD =6V, IT=0.1A V3 Tj=25 °C, VD=12V, RGK=1k Ω Junction to ambient Limits Min. — — — — 0.2 1 — — Typ. — — — — — — — — Max. 0.1 0.1 1.6 0.8 — 100 V 2 3 180 Unit mA mA V V V µA mA °C/W V2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (µ A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100 The above values do not include the current flowing through the 1k Ω resistance between the gate and cathode. V3. IGT, VGT measurement circuit. A1 IGS 3V DC A3 IGT A2 TUT 6V DC 60Ω V1 RGK 12 VGT 1kΩ SWITCH SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) PERFORMANCE CURVES SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 101 7 Ta = 25°C 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 10 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 VFGM = 6V PG(AV) = 0.01W VGT = 0.8V PGM = 0.1W 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 TYPICAL EXAMPLE 100 IGT = 100µA (Tj = 25°C) VGD = 0.2V IFGM = 0.1A 10–1 10–2 10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) GATE CURRENT VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 100 (%) 200 180 160 #1 #2 GATE TRIGGER VOLTAGE (V) GATE CURRENT (Tj = t °C) GATE CURRENT (Tj = 25°C) 140 120 100 80 60 40 20 TYPICAL EXAMPLE IGT (25°C) # 1 32µA # 2 9µA 0.9 0.8 0.7 0.6 0.5 0.4 0.3 See ∗3 0.2 0.1 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) TRANSIENT THERMAL IMPEDANCE (°C/W) 180 160 140 120 100 80 60 40 20 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) AVERAGE POWER DISSIPATION (W) 200 100 23 5 7 101 23 5 7 102 23 5 7 103 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.8 0.7 0.6 0.5 60° 0.4 0.3 0.2 0.1 0 0 θ 360° RESISTIVE, INDUCTIVE LOADS 0.4 0.1 0.2 0.3 θ = 30° 90° 120° 180° AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE 140 120 100 80 60 40 20 0 0 θ = 30° 60° 90° 120° 0.1 0.2 AVERAGE POWER DISSIPATION (W) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 0.8 0.7 0.6 90° 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 θ θ θ = 30° 60° 120° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 180° 0.3 0.4 360° RESISTIVE LOADS 0.5 0.3 0.4 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 AMBIENT TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 60° θ = 30° θ 360° RESISTIVE, INDUCTIVE LOADS 0.5 0.3 0.4 90° 180° 120° DC 270° 140 120 100 80 60 40 20 0 0 θ = 30° 0.1 60° 0.2 θ θ 360° RESISTIVE LOADS NATURAL CONVECTION 120° 90° 180° 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 NATURAL CONVECTION 140 θ 120 100 80 60 40 20 0 0 0.1 360° RESISTIVE, INDUCTIVE LOADS BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE RGK = 1kΩ θ = 30° 60° 90° 120° 180° 270° DC 0.2 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE 100 (%) 120 100 TYPICAL EXAMPLE Tj = 125°C 100 (%) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 120 100 80 60 40 20 TYPICAL EXAMPLE # 1 IGT (25°C)=10µA # 2 IGT (25°C)=66µA Tj = 125°C, RGK = 1kΩ #2 #1 BREAKOVER VOLTAGE (RGK = r k Ω) BREAKOVER VOLTAGE (RGK = 1k Ω) 80 60 40 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 100 (%) 500 HOLDING CURRENT (mA) Tj = 25°C IH (25°C)=1mA IGT (25°C)=25µA 400 HOLDING CURRENT (RGK = r k Ω) HOLDING CURRENT (RGK = 1k Ω) #1 300 TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 13µA 1.6mA # 2 59µA 1.8mA ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, TYPICAL EXAMPLE JUNCTION TEMPERATURE (°C) DISTRIBUTION #2 200 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 100 (%) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t °C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 Tj = 25°C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 TYPICAL EXAMPLE IGT (25°C) # 1 10µA #2 # 2 66µA #1 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) GATE CURRENT PULSE WIDTH (µs) Feb.1999