CR03AM

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR03AM OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm 2 VOLTAGE CLASS TYPE NAME 3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 1.25 1.25 1.3 12.5 MIN 1 5.0 MAX 0.47 0.3 20 1.6 0.5 0.1 6 6 0.3 0.23 132 • IT (AV) ........................................................................ 0.3A • VDRM ..............................................................400V/600V • IGT ......................................................................... 100µ A APPLICATION Leakage protector, timer, gas ignitor MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 JEDEC : TO-92 Voltage class 8 400 500 320 400 500 320 12 600 800 480 600 800 480 Non-repetitive peak off-state voltage V1 V1 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Ta=47° C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value –40 ~ +110 –40 ~ +125 V1. With gate to cathode resistance RGK=1k Ω. Feb.1999 3.9 MAX Unit V V V V V V Unit A A A A2s W W V V A °C °C g MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=110°C, V RRM applied Tj=110°C, V DRM applied, RGK=1k Ω Ta=25°C, I TM=4A, instantaneous value Tj=25 °C, VD =6V, IT=0.1A V3 Tj=110 °C, VD =1/2VDRM, RGK=1kΩ Tj=25 °C, VD =6V, IT=0.1A V3 Tj=25 °C, VD=12V, RGK=1k Ω Junction to ambient Limits Min. — — — — 0.2 1 — — Typ. — — — — — — 1.5 — Max. 0.1 0.1 1.8 0.8 — 100 V 2 3 180 Unit mA mA V V V µA mA °C/ W V2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (µ A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100 The above values do not include the current flowing through the 1k Ω resistance between the gate and cathode. V3. IGT, VGT measurement circuit. A1 IGS 3V DC A3 IGT A2 TUT 6V DC 60Ω V1 RGK 12 VGT 1kΩ SWITCH SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 101 7 Ta = 25°C 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 20 SURGE ON-STATE CURRENT (A) 18 16 14 12 10 8 6 4 2 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 100 (%) TYPICAL EXAMPLE 102 PGM = 0.5W VFGM = 6V PG(AV) = 0.1W VGT = 0.8V (Tj = 25°C) IGT = 100µA (Tj = 25°C) VGD = 0.2V IFGM = 0.3A GATE VOLTAGE (V) 100 10–1 10–2 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 1022 3 5 GATE CURRENT (mA) GATE TRIGGER CURRENT (Tj=t°C) GATE TRIGGER CURRENT (Tj=25°C) 101 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 GATE TRIGGER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) DISTRIBUTION ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, TYPICAL EXAMPLE IGT (25°C) = 35µA AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.5 AMBIENT TEMPERATURE (°C) 180° 120° 90° 60° ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 40 20 0 0 θ = 30° 90° 180° 60° 120° 0.1 0.2 0.3 0.4 0.5 θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 0.4 θ = 30° 0.3 0.2 θ 360° RESISTIVE, INDUCTIVE LOADS 0.3 0.4 0.5 0.1 0 0 0.1 0.2 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 120° 0.5 90° 60° θ = 30° 180° 0.4 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 140 120 100 80 60 40 20 0 0 θ = 30° 60° 90° 120° 180° 0.1 0.2 0.3 0.4 0.5 θ θ 360° RESISTIVE LOADS NATURAL CONVECTION 0.3 0.2 θ θ 0.1 360° 0 0 0.1 RESISTIVE LOADS 0.2 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.5 270° 180° 120° 90° DC 0.4 60° θ = 30° 0.3 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 NATURAL CONVECTION 140 θ 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 θ = 30° 60° 360° RESISTIVE, INDUCTIVE 90° LOADS 120° 180° 270° DC 0.2 θ 360° RESISTIVE, INDUCTIVE LOADS 0.3 0.4 0.5 0.1 0 0 0.1 0.2 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) 160 140 120 100 80 60 40 20 100 (%) TYPICAL EXAMPLE RGK = 1kΩ 160 140 120 100 80 60 40 20 TYPICAL EXAMPLE Tj = 110°C BREAKOVER VOLTAGE (RGK = r k Ω) BREAKOVER VOLTAGE (RGK = 1k Ω) 0 20 40 60 80 100 120 BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C) 0 –40 –20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 200 RGK = 1kΩ 180 160 140 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) Tj = 110°C Tj = 25°C HOLDING CURRENT (mA) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 DISTRIBUTION RGK = 1kΩ BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, TYPICAL EXAMPLE IGT (25°C) = 35µA 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 500 HOLDING CURRENT (mA) 400 REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C) TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 10µA 1.0mA # 2 26µA 1.1mA #1 #2 100 (%) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 300 200 100 VD = 12V, Tj = 25°C 0 10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 GATE TO CATHODE RESISTANCE (kΩ) JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CURRENT (µA) 104 7 5 4 3 2 #1 103 7 5 4 3 2 TYPICAL EXAMPLE IGT (DC) # 1 16µA # 2 65µA #2 Tj = 25°C 102 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (µs) Feb.1999