CR04AM

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE CR04AM OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm 2 VOLTAGE CLASS TYPE NAME 3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 1.25 1.25 1.3 12.5 MIN 1 5.0 MAX 0.63 0.4 10 0.4 0.5 0.1 6 6 0.3 0.23 132 • IT (AV) ........................................................................ 0.4A • VDRM ..............................................................400V/600V • IGT ......................................................................... 100µ A JEDEC : TO-92 APPLICATION Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Ta=54° C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value –40 ~ +125 –40 ~ +125 V1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 3.9 MAX Unit V V V V V Unit A A A A2s W W V V A °C °C g MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125°C, V RRM applied Tj=125°C, V DRM applied, RGK=1k Ω Ta=25°C, I TM=1.2A, instantaneous value Ta=25°C, V D =6V, IT =0.1A V3 Tj=125°C, VD=1/2VDRM, RGK=1k Ω Tj=25 °C, VD =6V, IT=0.1A V3 Tj=25 °C, VD=12V, RGK=1k Ω Junction to ambient Limits Min. — — — — 0.2 1 — — Typ. — — — — — — 1.5 — Max. 0.5 0.5 1.2 0.8 — 100 V 2 3 150 Unit mA mA V V V µA mA °C/W V2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (µ A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100 The above values do not include the current flowing through the 1k Ω resistance between the gate and cathode. V3. IGT, VGT measurement circuit. A1 IGS 3V DC A3 IGT A2 TUT 6V DC 60Ω V1 RGK 12 VGT 1kΩ SWITCH SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 5 RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE GATE CHARACTERISTICS 102 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) VFGM = 6V PGM = 0.5W GATE VOLTAGE (V) 7 5 VGT = 0.8V 3 2 (Tj = 25°C) 7 5 3 2 7 5 3 2 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 100 PG(AV) = 0.1W IGT = 100µA (Tj = 25°C) IFGM = 0.3V 10–1 VGD = 0.2V 10–2 10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3 GATE CURRENT (mA) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 GATE TRIGGER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) TRANSIENT THERMAL IMPEDANCE (°C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) 0 –40 –20 AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.8 60° 120° θ = 30° 90° 0.7 180° 0.6 0.5 0.4 0.3 0.2 0.1 0 0 θ 360° RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 90° 60° 120° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 180° AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 0.8 θ = 30° 90° 60° 120° 0.7 180° 0.6 0.5 0.4 0.3 0.2 0.1 0 0 θ θ ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 140 120 100 80 60 40 20 0 0 θ = 30° 60° 90° 120° 180° θ θ 360° RESISTIVE LOADS NATURAL CONVECTION 360° RESISTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 90° 180° 0.7 θ = 30° 60° 120° 270° DC 0.6 0.5 0.4 0.3 0.2 0.1 0 0 θ 360° RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 20 0 θ = 30° 0 60° 120° 270° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) 100 (%) 160 140 120 100 80 60 40 20 TYPICAL EXAMPLE 120 100 TYPICAL EXAMPLE BREAKOVER VOLTAGE (RGK = r k Ω) BREAKOVER VOLTAGE (RGK = 1k Ω) BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C) 80 60 40 20 Tj = 125°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) RGK = 1kΩ 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) HOLDING CURRENT (mA) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C RGK = 1kΩ 140 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 101 7 DISTRIBUTION TYPICAL EXAMPLE 5 IGT (25°C) = 35µA 3 2 100 7 5 3 2 10–1 7 5 3 2 ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,,,,,,,,, RGK = 1kΩ 10–2 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 100 (%) HOLDING CURRENT VS. GATE TRIGGER CURRENT 4.0 HOLDING CURRENT (mA) 500 TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 25µA 0.9mA Tj = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 400 HOLDING CURRENT (RGK = r k Ω) HOLDING CURRENT (RGK = 1k Ω) 300 200 #1 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) 0 100 101 GATE TRIGGER CURRENT (µA) 102 TURN-ON TIME VS. GATE CURRENT 102 7 TYPICAL EXAMPLE 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C 40 35 TURN-OFF TIME (µs) TURN-OFF TIME VS. JUNCTION TEMPERATURE VD = 50V, VR = 50V IT = 2A, RGK = 1kΩ TYPICAL EXAMPLE TURN-ON TIME (µs) 30 25 DISTRIBUTION 20 15 10 5 0 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE 100 (%) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 #1 #2 TYPICAL EXAMPLE IGT (DC) # 1 10µA # 2 65µA REPETITIVE PEAK REVERSE VOLTAGE (Tj = t °C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) Tj = 25°C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999