CR05AS

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 2 3 0.8 MIN 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 –0.05 3 • IT (AV) ........................................................................ 0.5A • VDRM ..............................................................200V/400V • IGT ......................................................................... 100µ A APPLICATION Solid state relay, strobe flasher, ignitor, hybrid IC 1 SOT-89 MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 4 (marked “CB”) 200 300 160 200 160 8 (marked “CD”) 400 500 320 400 320 3.9±0.3 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Ta=57° C V2 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.79 0.5 10 0.4 0.1 0.01 6 6 0.1 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C mg Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value 48 V1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125°C, V RRM applied Tj=125°C, V DRM applied, RGK=1k Ω Ta=25°C, I TM=1.5A, instantaneous value Ta=25°C, V D =6V, IT =0.1A V4 Tj=125°C, VD=1/2VDRM, RGK=1k Ω Tj=25 °C, VD =6V, IT=0.1A V4 Tj=25 °C, VD=12V, RGK=1k Ω Junction to ambient V2 Limits Min. — — — — 0.2 1 — — Typ. — — — — — — — — Max. 0.1 0.1 1.9 0.8 — 100 V 3 3 70 Unit mA mA V V V µA mA °C/W V2. Soldering with ceramic plate (25mm × 25mm × t0.7). V3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (µ A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100 The above values do not include the current flowing through the 1k Ω resistance between the gate and cathode. V4. IGT, VGT measurement circuit. A1 IGS 3V DC A3 IGT A2 TUT 6V DC 60Ω V1 RGK 12 VGT 1kΩ SWITCH SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 5 RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 GATE VOLTAGE (V) 101 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) VFGM = 6V PG(AV) = 0.01W VGT = 0.8V PGM = 0.1W 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 TYPICAL EXAMPLE 100 IGT = 100µA (Tj = 25°C) VGD = 0.2V IFGM = 0.1A 10–1 10–2 10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) GATE CURRENT VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 100 (%) 200 180 160 140 120 100 80 60 40 20 #1 #2 GATE TRIGGER VOLTAGE (V) GATE CURRENT (Tj = t °C) GATE CURRENT (Tj = 25°C) TYPICAL EXAMPLE IGT (25°C) # 1 32µA # 2 9µA 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 See ∗3 0.1 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) TRANSIENT THERMAL IMPEDANCE (°C/W) 7 25 25 t0.7 5 ALUMINUM BOARD 3 WITH SOLDERING 2 AVERAGE POWER DISSIPATION (W) 100 103 23 5 7 101 23 5 7 102 23 5 7 103 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 1.5 θ = 30° 60° 90° 120° 180° 1.0 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) 0.5 θ 360° 0 0 RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 RESISTIVE, 100 INDUCTIVE LOADS 80 NATURAL CONVECTION 60 θ = 30° 90° 180° 40 60° 120° 20 0 0 0.2 0.4 0.6 0.8 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 1.5 90° θ = 30° 60° 120° 180° 1.0 0.5 θ θ 360° 0 0 RESISTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θθ WITH SOLDERING 360° 120 100 80 60 40 20 0 0 θ = 30° 0.2 0.4 60° 90° 0.6 120° 180° 0.8 RESISTIVE LOADS NATURAL CONVECTION MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 1.5 90° 180° θ = 30° 60° 120° 270° DC 1.0 0.5 θ 360° RESISTIVE, INDUCTIVE LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 25 25 ± t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 NATURAL CONVECTION RESISTIVE, 100 INDUCTIVE LOADS 80 60 DC 40 20 0 0 0.2 θ = 30° 60° 120° 90° 180° 0.4 0.6 0.8 270° BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) RGK = 1kΩ AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 120 100 TYPICAL EXAMPLE Tj = 125°C 100 (%) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 120 100 80 60 40 TYPICAL EXAMPLE # 1 IGT (25°C)= 10µA 20 # 2 IGT (25°C)= 66µA Tj = 125°C, RGK = 1kΩ #2 #1 BREAKOVER VOLTAGE (RGK = r k Ω) BREAKOVER VOLTAGE (RGK = 1k Ω) 80 60 40 20 0 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) 0 100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 100 (%) 500 HOLDING CURRENT (mA) HOLDING CURRENT (RGK = r k Ω) HOLDING CURRENT (RGK = 1k Ω) Tj = 25°C IH (25°C) = 1mA IGT (25°C) = 25µA 400 #1 300 #2 200 TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 13µA 1.6mA # 2 59µA 1.8mA ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, JUNCTION TEMPERATURE (°C) DISTRIBUTION TYPICAL EXAMPLE 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7101 2 3 5 7102 GATE TO CATHODE RESISTANCE (kΩ) 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 100 (%) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t °C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 Tj = 25°C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 #1 TYPICAL EXAMPLE IGT (25°C) # 1 10µA #2 # 2 66µA GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) GATE CURRENT PULSE WIDTH (µs) Feb.1999