CR5AS

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR5AS OUTLINE DRAWING Dimensions in mm 6.5 4 ∗ TYPE NAME VOLTAGE CLASS 5.5±0.2 1.5±0.2 5.0±0.2 0.5±0.1 0.9 MAX 1.0 2.3 2.3 MIN 1.0 MAX 10 MAX 0.5±0.2 0.8 case temperature 2.3 2.3 ∗ Measurement point of 1 2 3 24 1 2 3 4 CATHODE ANODE GATE ANODE • IT (AV) ........................................................................... 5A • VDRM ..............................................................400V/600V • IGT ......................................................................... 200µ A 3 1 MP-3 APPLICATION Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for autocycle, electric tools, other general purpose control applications, strobe flasher MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Tc =88°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 7.8 5 90 33 0.5 0.1 6 6 0.3 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C g Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value 0.26 V1. With Gate-to-cathode resistance RGK =220Ω Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125°C, VRRM applied, RGK=220Ω Tj=125°C, VDRM applied, RGK=220Ω Tc=25 °C, ITM =15A, instantaneous value Tj=25 °C, VD=6V, IT=0.1A Tj=125°C, VD=1/2VDRM, RGK=220Ω Tj=25 °C, VD=6V, IT=0.1A Tj=25 °C, VD=12V, RGK=220Ω Junction to case V2 Limits Min. — — — — 0.1 1 — — Typ. — — — — — — 3.5 — Max. 2.0 2.0 1.8 0.8 — 200 V 3 — 3.0 Unit mA mA V V V µA mA °C/W V2. The method point for case temperature is at anode tab. V3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BD) Item IGT (µ A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100 D 80 ~ 200 The above values do not include the current flowing through the 220 Ω resistance between the gate and cathode. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 7 Tc = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 100 SURGE ON-STATE CURRENT (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 102 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) 101 7 5 3 2 VFGM = 6V PGM = 0.5W GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 103 7 5 3 2 102 7 5 3 2 #1 TYPICAL EXAMPLE IGT (25°C) #2 # 1 @11µA # 2 @61µA 100 7 5 3 2 PG(AV) = 0.1W VGT = 0.8V IGT = 200µA (Tj = 25°C) IFGM = 0.3A 10–1 7 5 VGD = 0.1V 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 GATE CURRENT (mA) 101 7 5 3 VD = 6V 2 RL = 60Ω 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 Tj = 25°C MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE TRIGGER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE JUNCTION TEMPERATURE (°C) TRANSIENT THERMAL IMPEDANCE (°C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 JUNCTION TO AMBIENT 102 7 5 3 2 101 7 5 3 2 JUNCTION TO CASE 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) 0 –60 –40 –20 0 20 40 60 80 100 120 140 AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 16 180° 14 120° 90° 12 60° 10 8 6 4 2 0 0 1 θ = 30° θ 360° RESISTIVE, INDUCTIVE LOADS 2 3 4 5 6 7 8 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 40 20 0 0 θ = 30° 60° 1 2 3 90° 180° 120° 4 5 6 7 8 θ 360° RESISTIVE, INDUCTIVE LOADS AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (°C) 140 120 100 80 60 AMBIENT TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION WITHOUT FIN ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 θ = 30° 60° 90° 20 120° 180° 0 0 1 2 40 θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION ALUMINUM BOARD 80 80 t2.3 θ = 30° 40 60° 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) 3 4 5 6 7 8 AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 16 CASE TEMPERATURE (°C) 14 12 θ θ 120° 360° 180° ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 RESISTIVE LOADS 140 θθ 120 100 80 60 40 20 0 0 1 θ = 30° 60° 90° 120° 180° 360° RESISTIVE θ = 30° 60° 90° 10 LOADS 8 6 4 2 0 0 1 2 3 4 5 6 7 8 2 3 4 5 6 7 8 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) 120 100 80 60 θ = 30° 60° 40 90° 120° 20 180° 0 0 360° RESISTIVE LOADS NATURAL CONVECTION AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 WITHOUT FIN 140 θθ ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 ALUMINUM BOARD 140 80 80 t2.3 θθ 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 360° RESISTIVE θ = 30° LOADS 60° NATURAL 90° CONVECTION 120° 180° 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 RGK = 220Ω BREAKOVER VOLTAGE (RGK = r Ω) BREAKOVER VOLTAGE (RGK = 220Ω) BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C) 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 Tj = 125°C 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 2 3 5 710-1 2 3 5 7100 2 3 5 7 101 GATE TO CATHODE RESISTANCE (Ω) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) HOLDING CURRENT (mA) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C 140 RGK = 220Ω 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 101 7 5 4 DISTRIBUTION 3 2 TYPICAL EXAMPLE IGT (25°C)= 35µA 100 7 5 4 3 2 VD = 12V RGK = 220Ω –1 10 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 100 (%) 400 350 300 250 200 150 100 50 0 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 #1 #2 TYPICAL EXAMPLE IGT (25°C) IH (1K) # 1 14µA 1.7mA # 2 48µA 2.7mA Tj = 25°C REPETITIVE PEAK REVERSE VOLTAGE (Tj = t °C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) 100 (%) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) HOLDING CURRENT (RGK = r Ω) HOLDING CURRENT (RGK = 220Ω) GATE TO CATHODE RESISTANCE (kΩ) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR5AS MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 5 3 2 103 7 5 3 2 102 7 5 3 VD = 6V 2 RL = 60Ω Ta = 25°C 101 0 10 2 3 4 5 7 101 100 (%) #1 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TYPICAL EXAMPLE IGT (DC) #1 11µA #2 61µA #2 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999