CR6PM

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR6PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in mm 2.8 17 5.0 1.2 TYPE NAME VOLTAGE CLASS φ3.2±0.2 13.5 MIN 3.6 1.3 MAX 0.8 2.54 2.54 8.5 0.5 2.6 • • • • • IT (AV) ........................................................................... 6A VDRM ..............................................................400V/600V IGT ..........................................................................10mA Viso ........................................................................ 1500V UL Recognized: File No. E80276 123 2 ∗ Measurement point of case temperature 3 1 1 CATHODE 2 ANODE 3 GATE TO-220F APPLICATION Switching mode power supply, ECR, regulator for autocycle, motor control MAXIMUM RATINGS (Ta=25°C, unless otherwise noted) Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Viso Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Tc =85°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 Ratings 9.4 6 90 34 5 0.5 6 10 2 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C g V Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, each terminal to case 2.0 1500 Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125°C, V RRM applied Tj=125°C, V DRM applied Tc=25 °C, ITM=20A, Instantaneous value Tj=25 °C, VD =6V, IT=1A Tj=125°C, VD=1/2VDRM Tj=25 °C, VD=6V, IT=1A Tj=25 °C, VD=12V Junction to case V1 Limits Min. — — — — 0.2 — — — Typ. — — — — — — 15 — Max. 2.0 2.0 1.7 1.0 — 10 — 4.0 Unit mA mA V V V mA mA °C/W V1. The contact thermal resistance R th (j-c) is 0.5° C/W with greased. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 125°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) VFGM = 6V PGM = 5W GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 TYPICAL EXAMPLE VGT = 1V IGT = 10mA PG(AV) = 0.5W VGD = 0.2V IFGM = 2A 10–1 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 GATE CURRENT (mA) 100 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) TRANSIENT THERMAL IMPEDANCE (°C/W) 1.0 GATE TRIGGER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 101 100 10–1 0.1 0 –40 –20 10–2 10–3 2 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 TIME (s) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 16 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 CASE TEMPERATURE (°C) 14 12 10 8 6 4 2 0 0 2 θ = 30° 180° 120° 90° 60° 140 120 100 80 60 40 20 0 0 θ 360° RESISTIVE, INDUCTIVE LOADS θ 360° RESISTIVE, INDUCTIVE LOADS 10 12 14 16 θ = 30° 60° 90° 120° 1 2 3 4 5 180° 6 7 8 4 6 8 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 16 180° 120° 90° 60° CASE TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 140 120 100 80 60 40 60° 20 0 0 2 4 6 8 10 12 14 16 120° θ = 30° 90° 180° θ θ 14 12 10 8 6 4 2 0 0 2 4 θ = 30° 360° RESISTIVE LOADS θ θ 360° 6 RESISTIVE LOADS 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 16 θ = 30° DC 14 60° 270° 180° 12 120° 90° 10 8 6 4 2 0 0 2 4 6 8 θ 360° RESISTIVE, INDUCTIVE LOADS 10 12 14 16 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 20 0 0 2 θ = 30° 90° 180° 60° 120° 270° DC θ 360° RESISTIVE, INDUCTIVE LOADS 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 100 (%) 160 140 120 100 80 60 40 20 TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125°C TYPICAL 140 EXAMPLE 120 IGT (25°C) # 1 4.7mA 100 # 2 7.2mA 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) #1 #2 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR6PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 50 45 HOLDING CURRENT (mA) HOLDING CURRENT VS. GATE TRIGGER CURRENT HOLDING CURRENT (mA) 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 100 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (mA) TURN-ON TIME VS. GATE CURRENT 5.0 4.5 TURN-ON TIME (µs) TURN-OFF TIME (µs) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 # VD = 100V RL = 16Ω Ta = 25°C TYPICAL EXAMPLE IGT (25°C) # 5.2mA 80 70 60 50 40 30 20 10 TYPICAL EXAMPLE ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, 20 TURN-OFF TIME VS. JUNCTION TEMPERATURE DISTRIBUTION 0 10 20 30 40 50 60 70 80 90 100 GATE CURRENT (mA) 0 0 IT = 6A, –di/dt = 5A/µs, VD = 300V, dv/dt = 20V/µs VR = 50V 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t °C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) 100 (%) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (µs) tw 0.1s GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) Feb.1999