CT20VML-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE CT20VML-8 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 1.3 1 13.2 ± 0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 0.5 2.5 2.5 0.5 wr q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES ................................................................................ 400V ¡ICM .................................................................................... 130A TO-220C APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 10s See figure 1 2.6 ± 0.4 q w e Ratings 400 ±15 ±16 130 –40 ~ +150 –40 ~ +150 4.5 Unit V V V A °C °C ELECTRICAL CHARACTERISTICS Symbol V(BR)CES ICES IGES VGE(th) Parameter (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±16V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 — — 0.5 Typ. — — — — Max. — 10 ±0.1 2.0 Unit V µA µA V Feb.1999 Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE PERFORMANCE CURVES PULSE COLLECTOR CURRENT ICM (A) MAXIMUM PULSE COLLECTOR CURRENT 160 CM = 400µF 120 TC < 50°C = 80 40 TC < 70°C = 0 0 4 8 12 16 GATE-EMITTER VOLTAGE VGE (V) Figure 1 APPLICATION EXAMPLE IXe TRIGGER Vtrig SIGNAL CM Vtrig + – VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 300µF VGE = 12V MAXIMUM CONDITION 350V 130A 400µF Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 0.5A. (In general, it is satisfied if RG ≥ 47Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 130A : full luminescence condition) of main condenser (CM=400 µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Feb.1999