CT20VS-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE DRAWING 1.5MAX. Dimensions in mm r 10.5MAX. 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 0.5 qwe wr 2.6 ± 0.4 q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES ............................................................................... 400V ¡ICM ................................................................................... 130A TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1 Ratings 400 ±30 ±40 130 –40 ~ +150 –40 ~ +150 4.5 Unit V V V A °C °C ELECTRICAL CHARACTERISTICS Symbol V(BR)CES ICES IGES VGE(th) Parameter (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0 Unit V µA µA V Feb.1999 Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage (1.5) MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 800µF 160 < TC = 50°C PULSE COLLECTOR CURRENT ICM (A) MAXIMUM PULSE COLLECTOR CURRENT 2000 MAIN CAPACITOR CM (µF) 1600 120 1200 80 800 40 < TC = 70°C 400 VCM = 350V TC < 70°C = VGE > 28V = 80 100 120 140 160 0 0 10 20 30 40 50 0 60 GATE-EMITTER VOLTAGE VGE (V) PULSE COLLECTOR CURRENT ICP (A) Figure 1 Figure 2 APPLICATION EXAMPLE IXe TRIGGER Vtrig SIGNAL CM Vtrig + – VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700µF VGE = 28V MAXIMUM CONDITION 360V 130A 800µF Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG ≥ 30Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 130A : full luminescence condition) of main condenser (CM=800µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Feb.1999