CT30SM-12

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE CT30SM-12 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 2 2 19.5MIN. 4 20.0 φ 3.2 4.4 1.0 q 5.45 w e 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES ................................................................................ 600V ¡IC ......................................................................................... 30A ¡High Speed Switching ¡Low VCE Saturation Voltage q TO-3P APPLICATION AC & DC motor controls, General purpose inverters, UPS, Power supply switching, Servo controls, etc. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM PC Tj Tstg — (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Maximum power dissipation Junction temperature Storage temperature Weight VGE = 0V VCE = 0V VCE = 0V Conditions Ratings 600 ±20 ±30 30 60 250 –40 ~ +150 –40 ~ +150 4.8 Unit V V V A A W °C °C g Feb.1999 Typical value MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE ELECTRICAL CHARACTERISTICS Symbol V (BR) CES IGES ICES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Rth (j-c) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VGE = ±30V, VCE = 0V VCE = 600V, VGE = 0V IC = 3.0mA, VCE = 10V IC = 30A, VGE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. 600 — — 4.5 — — — — — — — — — Typ. — — — 6.0 2.5 1480 180 54 30 135 135 250 — Max. — ±0.5 1 7.5 3.0 — — — — — — — 0.50 Unit V µA mA V V pF pF pF ns ns ns ns °C/W VCC = 300V, Resistance load, IC = 30A, VGE = 15V, RGE = 20Ω Junction to case PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25°C 50 COLLECTOR CURRENT IC (A) VGE = 20V OUTPUT CHARACTERISTICS (TYPICAL) 15V 12V Tj = 25°C 11V 40 8 30 10V 6 20 9V 4 IC = 60A 30A 10A 10 8V 2 0 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30SM-12 GENERAL INVERTER • UPS USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT VS. GATE EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 50 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) 5 4 COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C VCE = 10V Tj = 25°C 40 3 30 2 20 1 10 0 0 10 20 30 40 50 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE Cies, Coes, Cres (pF) SWITCHING TIME (ns) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC (TYPICAL) 104 7 5 3 2 Cies 103 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V 101 f = 1MHZ Coes SWITCHING TIME-COLLECTOR CURRENT CHARACTERISTIC (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 tf td(off) Tj = 25°C VCC = 300V VGE = 15V RG = 20Ω tr td(on) Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20 VCC = 200V TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 TRANSIENT THERMAL IMPEDANCE Zth ( j–c) 7 5 3 2 16 300V 10–1 7 5 3 2 7 5 3 2 12 8 10–2 7 5 3 2 10–2 7 5 3 2 4 0 0 20 40 60 80 100 10–3 10–3 10–5 2 3 5 710–4 2 3 5 710–3 PULSE WIDTH tw (s) Feb.1999 GATE CHARGE Qg (nc)