CT40TMH-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 OUTLINE DRAWING 10.5MAX. 1.2 Dimensions in mm 2.8 5.2 5.0 17 φ 3.2 3.8MAX. 1.3MAX. 13.5MIN. 0.8 8.5 2.54 2.54 4.7MAX. 0.5 2.6 qwe w q q GATE w COLLECTOR e EMITTER ¡VCES ................................................................................ 400V ¡ICM .................................................................................... 200A e TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1 Ratings 400 ±30 ±40 200 –40 ~ +150 –40 ~ +150 Unit V V V A °C °C ELECTRICAL CHARACTERISTICS Symbol V(BR)CES ICES IGES VGE(th) Parameter (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0 Unit V µA µA V Feb.1999 Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1500µF 160 TC < 70°C = PULSE COLLECTOR CURRENT ICM (A) 120 80 40 0 0 10 20 30 40 50 GATE-EMITTER VOLTAGE VGE (V) Figure 1 APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM Vtrig + – VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 180A CM = 1200µF VGE = 28V MAXIMUM CONDITION 350V 200A 1500µF Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG ≥ 30Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 200A : full luminescence condition) of main condenser (CM=1500µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Feb.1999