CT60AM-18B

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING 20MAX. Dimensions in mm 5 2 6 φ 3.2 26 4 1 2 1 1 2 3 20.6MIN. 2.5 0.5 5.45 5.45 3 4.0 wr q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES ............................................................................... 900V ¡IC ......................................................................................... 60A ¡Integrated Fast Recovery Diode q TO-3PL APPLICATION Microwave ovens, electromagnetic cooking devices, rice-cookers, voltage-resonant inverter circuit electric appliances. MAXIMUM RATINGS Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature TC = 25°C VGE = 0V VCE = 0V VCE = 0V Conditions Ratings 900 ±20 ±30 60 120 40 200 –40 ~ +150 –40 ~ +150 Unit V V V A A A W °C °C Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted) Symbol V (BR) CES ICES IGES VGE(th) VCE(sat) Cies Coes Cres td (on) tr td (off) tf Etail ICtail VEC Trr Rth (j-c) Rth (j-c) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Tail loss Collector tail current Emitter-collector voltage Reverse recovery time Thermal resistance (IGBT part) Thermal resistance Test conditions IC = 1mA, VGE = 0V VCE = 900V, VGE = 0V VGE = ±20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VCE = 15V VCE = 25V, VGE = 0V, f = 1MHz Limits Min. 900 — — 2.0 — — — — — — — — — — — — — — Typ. — — — 4.0 2.0 5000 125 85 0.05 0.12 0.30 0.25 0.6 6 — 0.5 — — Max. — 1 ±0.5 6.0 2.7 — — — — — — — 1.0 12 3 2 0.63 4.0 Unit V mA µA V V pF pF pF µs µs µs µs mJ/pls A V µs °C/W °C/W IC = 60A, Resistance load, VCC = 300V, VGE = 15V, RG = 10Ω ICP = 60A, Tj = 125°C, dv/dt = 200V/µs IE = 60A, VGE = 0V IE = 60A, di/dt = 20A/µs Junction to case Junction to case PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE VS.GATE-EMITTER VOLTAGE (TYPICAL) 5 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) PC = 200W TC = 25°C Pulse Test 160 15V 10V 9V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 200 4 120 3 IC = 120A 60A 80 VGE = 20V 2 30A 15A 8V 40 7V 1 TC = 25°C Pulse Test 0 0 1 2 3 4 5 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE COLLECTOR CURRENT VS. GATE-EMITTER VOLTAGE (TYPICAL) COLLECTOR CURRENT IC (A) VCE = 5V Pulse Test CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) CAPACITANCE Cies, Coes, Cres (pF) 200 160 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tj = 25°C 2 VGE = 0V 101 f = 1MHZ Cies 120 80 25°C Coes 40 Cres 0 0 4 8 12 16 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) SWITCHING TIME (ns) SWITCHING TIME VS.GATE RESISTANCE (TYPICAL) 3 2 VCC = 300V VGE = 15V Tj = 25°C 3 2 102 7 5 3 2 101 0 10 23 5 7 101 td(off) tf tr 103 IC = 60A 7 5 3 2 102 7 5 30 10 23 tf td(off) tr td(on) Tj = 25°C VCC = 300V VGE = 15V RG = 10Ω td(on) 23 5 7 102 5 7 101 23 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VS. GATE CHARGE CHARACTERISTIC (TYPICAL) 20 IC = 60A Tj = 25°C TRANSFER CHARACTERISTICS (TYPICAL) 80 EMITTER CURRENT IE (A) VGE = 0V Pulse Test 16 64 12 VCE = 250V 400V 48 8 600V 32 TC = 25°C 4 16 0 0 80 160 240 320 400 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nc) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE COLLECTOR-EMITTER BREAKDOWN VOLTAGE V (BR) CES (25°C) THRESHOLD VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) 7.0 GATE-EMITTER THRESHOLD VOLTAGE VGS (th) (V) VCE = 400V IC = 20mA COLLECTOR-EMITTER BREAKDOWN VOLTAGE V (BR) CES (t°C) BREAKDOWN VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) 1.4 VGE = 0V IC = 1mA 6.0 1.2 5.0 1.0 4.0 0.8 3.0 0.6 2.0 –50 0 50 100 150 0.4 –50 0 50 100 150 JUNCTION TEMPERATURE tj (°C) CHANNEL TEMPERATURE tj (°C) TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 7 5 3 2 2 TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) IGBT TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS DIODE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 5 3 2 100 7 5 3 2 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 5 710–5 2 3 5 710–4 2 3 5 710–3 10–2 5 710–5 2 3 5 710–4 2 3 5 710–3 10–2 10–2 10–2 PULSE WIDTH tw (s) PULSE WIDTH tw (s) Feb.1999