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FD1500AU-120DA

FD1500AU-120DA

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    FD1500AU-120DA - HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
FD1500AU-120DA 数据手册
MITSUBISHI SOFT RECOVERY DIODE e. tion. cifica t to chang c al spe t a fin are subje o is is nic limits e: Th tr Notice parame Som P MIN RELI ARY FD1500AU-120DA HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE FD1500AU-120DA OUTLINE DRAWING Dimensions in mm 6.35 × 10.8 φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN φ85 ± 0.2 TYPE NAME 12 ± 2 26 ± 0.5 0.4MIN φ85 ± 0.2 φ120MAX φ3.5 ± 0.2 2.2 ± 0.2DEPTH ¡VRRM Repetitive peak reverse voltage ................... 6000V ¡IT(AV) Average on-state current .................... 1200A APPLICATION High-power inverters Fly-hweel diode for GCT Thyristor Power supplies as high frequency rectifiers MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) V(LTDS) Symbol IF(RMS) IF(AV) IFSM I2t di/dt Tj Tstg — — Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Long term DC stability voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Critical rate of rise of reverse recovery current Operation junction temperature Storage temperature Mounting force required Weight Conditions — — — λ = 100Fit Conditions Applied for all condition angles f = 60Hz, sinewave θ = 180°, Tf =74°C One half cycle at 60Hz, Tj =125°C start IFM =1500A, VR = 3000V, Tj = 25/125°C CC =6µF, LC = 0.3µH (See Fig. 1, 2) Voltage class 6000 6000 4800 3200 Ratings 1900 1200 26 2.8× 106 1000 –40 ~ 125 –40 ~ 150 39 ~ 55 — Unit V V V V Unit A A kA A 2s A/µs °C °C kN g (Recommended value 47kN) Typical value 1450g ELECTRICAL CHARACTERISTICS Symbol VFM IRRM QRR Erec Rth(j-f) Parameter Forward voltage Repetitive peak reverse current Reverse recovery charge Reverse recovery energy Thermal resistance Test conditions IFM = 3400A, Tj = 125°C VRM = 6000V, Tj = 125°C IFM = 1500A, di/dt = 1000A/µs, VR = 3000V, Tj = 125°C CC = 6µF, LC = 0.3µH (See Fig. 1, 2) Junction to Fin Min. — — — — — Limits Typ. — — — — — Max. 5 150 5400 9.4 0.0071 Unit V mA µC J/P K/W Jul. 2002 10.5 ± 1 MITSUBISHI SOFT RECOVERY DIODE e. tion. cifica t to chang c al spe t a fin are subje o is is nic limits e: Th tr Notice parame Som P MIN RELI ARY FD1500AU-120DA HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE QRR=(trr×IRM)/2 IT ANL L(load) VR trr TUD CDi Lc GCT Cc 0 di/dt(0 ~ 50%IRM) 50%IT 50%IRM 90%IRM VRM VR Fig. 1 Reverse recovery test circuit Fig. 2 Reverse recovery waveform PERFORMANCE CURVES MAXIMUM ON STATE CHARACTERISTIC 104 7 TYPICAL : Tj=125°C 5 3 2 Erec (J/P) Erec VS IF (TYPICAL) 12 11 10 9 8 7 6 5 4 3 2 1 0 CONDITION VR = 3000V, Tj =125°C di/dt = 1000A/µs Cc = 6µF, Lc = 0.3µH 103 7 5 3 2 102 7 5 3 2 101 0 1 2 3 4 5 6 7 IF (A) 0 500 1000 1500 2000 2500 3000 IF (A) VFM (V) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7 101 0.010 0.009 0.008 0.007 Zth (K/ W) 0.006 0.005 0.004 0.003 0.002 0.001 0.000 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (S) Jul. 2002
FD1500AU-120DA 价格&库存

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