FS10ASH-06

MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡2.5V DRIVE ¡VDSS .................................................................................. 60V ¡rDS (ON) (MAX) .............................................................. 73m Ω ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (TYP.) ............. 55ns q MP-3 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 60 ±10 10 40 10 10 40 30 –55 ~ +150 –55 ~ +150 0.26 Unit V V A A A A A W °C °C g Feb.1999 L = 100µH MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 2.5V ID = 5A, VGS = 4V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 60 — — 0.6 — — — — — — — — — — — — — — Typ. — — — 0.9 54 64 0.27 18 1150 185 80 19 45 90 65 1.0 — 55 Max. — ± 0.1 0.1 1.2 73 95 0.365 — — — — — — — — 1.5 4.17 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 30V, ID = 5A, VGS = 4V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 tw = 10ms 40 100ms 1ms 10ms DC 30 20 10 0 0 50 100 150 200 10–1 7 5 TC = 25°C 3 Single Pulse 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 5V 4V 3V 2.5V Tc = 25°C Pulse Test 2V CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 5V 4V 3V Tc = 25°C Pulse Test 2.5V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) PD = 30W 8 12 2V 6 8 4 1.5V 4 1.5V 2 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 Tc = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 TC = 25°C Pulse Test VGS = 2.5V DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.6 80 1.2 ID = 15A 10A 60 4V 0.8 40 0.4 5A 20 0 0 0 1.0 2.0 3.0 4.0 5.0 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 Tc = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 TC = 25°C 75°C 125°C VDS = 5V Pulse Test DRAIN CURRENT ID (A) 24 16 8 FORWARD TRANSFER ADMITTANCE yfs (S) 32 0 0 1.0 2.0 3.0 4.0 5.0 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 td(off) tf tr td(on) Tch = 25°C VDD = 30V VGS = 4V RGEN = RGS = 50Ω Ciss Coss Crss 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VDS = 10V VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5.0 Tch = 25°C ID = 10A 4.0 SOURCE CURRENT IS (A) 32 TC = 125°C 3.0 20V 40V 24 75°C 25°C 2.0 16 1.0 8 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 2.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 1.6 1.2 0.8 0.4 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 0.2 1.2 1.0 0.8 PDM 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 100 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)