FS10KM-9

MITSUBISHI Nch POWER MOSFET FS10KM-9 HIGH-SPEED SWITCHING USE FS10KM-9 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAIN e SOURCE 123 2.6 ± 0.2 w ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) .............................................................. 0.73Ω ¡ID ......................................................................................... 10A ¡Viso ................................................................................ 2000V q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 450 ±30 10 30 35 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A W °C °C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FS10KM-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2 — — 3.3 — — — — — — — — — Typ. — — — — 3 0.56 2.8 5.5 1100 135 20 20 30 95 35 1.5 — Max. — — ±10 1 4 0.73 3.7 — — — — — — — — 2.0 3.57 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC 23 5 7 101 23 5 7 102 2 3 5 7 103 2 40 30 20 10 100 7 5 3 2 10–1 7 5 0 0 50 100 150 200 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 35W 8V DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VSD=20V 10V 10 6V 8V PD= TC = 25°C 35W Pulse Test 8 20 DRAIN CURRENT ID (A) 16 TC = 25°C Pulse Test 6V 12 6 8 5V 4 5V 4 2 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 2.0 TC = 25°C Pulse Test 32 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 1.6 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 24 1.2 VGS = 10V 20V 16 ID = 15A 10A 5A 0.8 8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25°C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC=25°C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 12 3 2 100 7 5 3 2 10–1 –1 10 23 5 7 100 23 75°C 125°C 8 4 0 0 4 8 12 16 20 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 7 5 3 2 102 7 5 3 2 Coss Ciss 103 7 5 SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 10–1 23 td(off) tf tr td(on) 5 7 100 23 5 7 101 Crss 101 Tch = 25°C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-9 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) Tch = 25°C ID = 10A 16 VDS = 100V 200V 12 400V 8 40 TC=125°C SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test 32 24 25°C 16 75°C 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch –c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10–1 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 1.0 0.8 0.6 0.4 –50 0 50 100 150 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)