FS10KM

MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE FS10KM-3 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 123 2.6 ± 0.2 ¡10V DRIVE ¡VDSS ............................................................................... 150V ¡rDS (ON) (MAX) ........................................................... 170mΩ ¡ID ........................................................................................ 10A ¡Integrated Fast Recovery Diode (TYP.) .......... 100ns ¡Viso ............................................................................... 2000V w q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V Conditions Ratings 150 ±20 10 40 10 10 40 25 –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 150 — — 2.0 — — — — — — — Typ. — — — 3.0 122 0.61 12 1250 175 75 25 30 60 34 1.0 — 100 Max. — ±0.1 0.1 4.0 170 0.85 — — — — — — — — 1.5 5.00 — Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω — — — — — — IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 40 30 tw = 10ms 20 100ms 1ms 10 0 0 50 100 150 200 100 7 TC = 25°C 10ms 5 Single Pulse DC 3 1 2 3 5 7 102 2 3 5 7 103 2 2 3 5 7 10 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 5 VGS = 20V 10V 7V 6V TC = 25°C Pulse Test CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 10V 7V 6V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 8 DRAIN CURRENT ID (A) 4 5V 6 3 4 5V 2 2 1 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 TC = 25°C Pulse Test 15A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 TC = 25°C Pulse Test 1.6 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 160 VGS = 10V 20V 1.2 10A 120 0.8 5A 80 0.4 40 0 0 0 4 8 12 16 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 VDS = 10V Pulse Test TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) 12 8 4 FORWARD TRANSFER ADMITTANCE yfs (S) 16 0 0 4 8 12 16 20 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101 VGS = 0V Coss Crss SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) td(off) tf td(on) tr 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KM-3 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 20 Tch = 25°C ID = 10A 16 VDS = 50V 80V 100V SOURCE CURRENT IS (A) 16 TC = 125°C 75°C 25°C 12 12 8 8 4 4 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 1.2 1.0 0.8 100 0.1 7 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)