FS10KMH-03

MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE FS10KMH-03 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 123 2.6 ± 0.2 w ¡2.5V DRIVE ¡VDSS .................................................................................. 30V ¡rDS (ON) (MAX) .............................................................. 92m Ω ¡ID ......................................................................................... 10A ¡Integrated Fast Recovery Diode (TYP.) ............. 35ns ¡Viso ................................................................................ 2000V q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 30µH VGS = 0V VDS = 0V Conditions Ratings 30 ±10 10 40 10 10 40 15 –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 2.5V ID = 5A, VGS = 4V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 0.6 — — — — — — — — — — — — — — Typ. — — — 0.9 68 88 0.34 12 540 160 55 12 35 45 40 1.0 — 35 Max. — ± 0.1 0.1 1.2 92 141 0.46 — — — — — — — — 1.5 8.3 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, ID = 5A, VGS = 4V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case IS = 5A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 20 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 tw = 10ms 100ms 1ms 10ms DC 16 12 8 TC = 25°C Single Pulse 4 0 0 50 100 150 200 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20 Tc = 25°C Pulse Test VGS = 5V 2.5V 10 4V 3V VGS = 5V 4V 3V 2.5V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 2V 12 PD = 15W 6 Tc = 25°C Pulse Test 8 2V 4 4 1.5V 2 1.5V 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 Tc = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100 Tc = 25°C Pulse Test VGS = 2.5V DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.6 80 1.2 ID = 15A 60 4V 0.8 10A 40 0.4 5A 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 1.0 2.0 3.0 4.0 5.0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 Tc = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 TC = 25°C 75°C 125°C VDS = 5V Pulse Test DRAIN CURRENT ID (A) 24 16 8 FORWARD TRANSFER ADMITTANCE yfs (S) 32 0 0 1.0 2.0 3.0 4.0 5.0 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 Tch = 25°C f = 1MHZ VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 td(on) td(off) tf tr 103 7 5 3 2 102 7 5 3 2 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) Ciss Coss Crss 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101 Tch = 25°C VDD = 15V VGS = 4V RGEN = RGS = 50Ω 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10KMH-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5.0 Tch = 25°C ID = 10A 4.0 SOURCE CURRENT IS (A) 32 3.0 VDS = 10V 24 TC = 125°C 75°C 2.0 20V 25V 16 25°C 1.0 8 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 2.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 1.6 1.2 0.8 0.4 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 D = 1.0 7 0.5 5 3 0.2 2 100 7 5 3 2 0.1 0.05 0.02 0.01 Single Pulse 1.2 1.0 0.8 PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)