FS1UM-18A

MITSUBISHI Nch POWER MOSFET FS1UM-18A HIGH-SPEED SWITCHING USE FS1UM-18A OUTLINE DRAWING 10.5MAX. r 3.2 7.0 Dimensions in mm 4.5 1.3 16 φ 3.6 3.8MAX. 1.0 12.5MIN. 0.8 2.54 2.54 4.5MAX. 0.5 2.6 qwe wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ................................................................................ 900V ¡rDS (ON) (MAX) .............................................................. 15.0Ω ¡ID ............................................................................................ 1A TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 900 ±30 1 3 65 –55 ~ +150 –55 ~ +150 2 Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS1UM-18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 900V, VGS = 0V ID = 1mA, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VGS = 10V ID = 0.5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 900 ±30 — — 2 — — 0.6 — — — — — — — — — Typ. — — — — 3 11.5 5.75 1.0 270 26 4 9 12 35 30 1.0 — Max. — — ±10 1 4 15.0 7.50 — — — — — — — — 1.5 1.92 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 0.5A, VGS = 10V, RGEN = RGS = 50Ω IS = 0.5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 tw = 100ms 1ms 10ms 100ms DC TC = 25°C Single Pulse 80 60 40 20 0 0 50 100 150 200 10–2 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 10V @ 5V TC = 25°C Pulse Test CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 2.0 TC = 25°C Pulse Test VGE = 20V 10V PD = 65W 1.0 DRAIN CURRENT ID (A) 1.6 5V DRAIN CURRENT ID (A) 0.8 1.2 0.6 4.5V 0.8 4.5V 0.4 0.4 4V 0.2 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS1UM-18A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test VGS = 10V 20V 40 ID = 2A 16 30 12 20 1A 8 10 0.5A 4 0 10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 2.0 TC = 25°C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) VDS = 10V Pulse Test DRAIN CURRENT ID (A) 1.6 3 2 100 7 5 3 2 125°C TC = 25°C 75°C 1.2 0.8 0.4 0 0 4 8 12 16 20 10–1 –1 10 23 5 7 100 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 Tch = 25°C 3 2 f = 1MHZ VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 3 2 Ciss Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 3 2 101 7 5 3 10–1 23 tf td(off) Coss tr td(on) Crss 100 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) 5 7 100 23 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS1UM-18A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 20 Tch = 25°C ID = 1A 16 4 12 VDS = 250V 400V 600V 3 8 2 TC = 125°C 75°C 4 1 25°C 0 0 4 8 12 16 20 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D = 1.0 2 100 7 0.2 5 0.1 3 2 10–1 7 5 3 2 0.5 1.2 1.0 0.8 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)