FS20SM-6

MITSUBISHI Nch POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE FS20SM-6 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS ................................................................................ 300V ¡rDS (ON) (MAX) .............................................................. 0.26Ω ¡ID .......................................................................................... 20A TO-3P APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 300 ±30 20 60 150 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 300 ±30 — — 2 — — 8.5 — — — — — — — — — Typ. — — — — 3 0.20 2.0 13.0 1400 280 55 25 50 150 65 1.5 — Max. — — ±10 1 4 0.26 2.6 — — — — — — — — 2.0 0.83 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω IS = 10A, VGS = 0V Channle to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC 160 120 80 40 0 0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V PD = 150W 5.5V CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) PD = 150W VDS = 20V 10V DRAIN CURRENT ID (A) 50 20 TC = 25°C Pulse Test 40 DRAIN CURRENT ID (A) 7V 16 30 6V 20 5V 10 4V 0 0 10 20 30 40 50 12 5V 8 4.5V 4 TC = 25°C Pulse Test 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20 0.5 TC = 25°C Pulse Test 16 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.4 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 12 ID = 40A 8 20A 10A 0 0 4 8 12 16 20 0.3 VGS = 10V 20V 0.2 4 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 102 7 5 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 32 24 3 2 101 7 5 3 2 100 0 10 23 5 7 101 TC = 25°C 16 75°C 125°C 23 5 7 102 8 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 Ciss 103 7 5 SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω td(off) 103 7 5 3 2 102 7 5 Coss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 100 23 tf tr td(on) 5 7 101 23 5 7 102 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGS = 0V Pulse Test 25°C 24 75°C Tch = 25°C ID = 20A 16 VDS = 50V 100V 200V 8 TC = 125°C 32 12 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 D=1 7 5 0.5 3 0.2 2 0.1 –1 10 7 5 3 2 1.0 0.8 PDM tw 0.6 0.05 0.02 0.01 T D= tw T 0.4 –50 0 50 100 150 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)