FS50KMJ-03

MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE FS50KMJ-03 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 f 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 123 2.6 ± 0.2 w ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................. 19mΩ ¡ID ........................................................................................ 50A ¡Integrated Fast Recovery Diode (TYP.) ............ 60ns ¡Viso ............................................................................... 2000V q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 30µH VGS = 0V VDS = 0V Conditions Ratings 30 ±20 50 200 50 50 200 25 –55 ~ +150 Unit V V A A A A A W °C °C V g Feb.1999 AC for 1minute, Terminal to case Typical value –55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 15 21 0.375 28 1600 500 260 17 90 130 125 1.0 — 60 Max. — ±0.1 0.1 2.0 19 35 0.475 — — — — — — — — 1.5 5.0 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, I D = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 25A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 tw = 10ms 40 30 100ms 1ms 10ms TC = 25°C Single Pulse DC 20 10 0 0 50 100 150 200 100 7 5 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100 PD = 25W VGS = 10V TC = 25°C Pulse Test 50 5V 4V TC = 25°C Pulse Test 3V DRAIN CURRENT ID (A) 80 DRAIN CURRENT ID (A) 5V 40 VGS = 10V 6V 60 4V 30 40 3V 20 PD = 25W 20 2V 10 2V 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50 TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 4.0 40 VGS = 4V 3.0 30 2.0 ID = 80A 20 10V 1.0 50A 30A 10 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN CURRENT ID (A) 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 75°C 125°C VDS = 10V Pulse Test TC = 25°C DRAIN CURRENT ID (A) 60 40 20 FORWARD TRANSFER ADMITTANCE yfs (S) 80 0 0 2 4 6 8 10 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 Tch = 25°C f = 1MHZ VGS = 0V SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 tf Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω td(off) Ciss 103 7 5 3 2 102 7 5 3 2 Coss Crss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) tr td(on) 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 Tch = 25°C ID = 50A 8 SOURCE CURRENT IS (A) 75 6 VDS = 10V 20V 50 TC = 125°C 75°C 25°C 4 25V 2 25 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.2 2.4 1.6 0.8 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 1.2 1.0 0.8 100 0.1 7 5 3 2 10–1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)