FS5KM-5

MITSUBISHI Nch POWER MOSFET FS5KM-5 HIGH-SPEED SWITCHING USE FS5KM-5 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAIN e SOURCE 123 2.6 ± 0.2 w ¡VDSS .............................................................................. 250V ¡rDS (ON) (MAX) .............................................................. 1.3Ω ¡ID .......................................................................................... 5A ¡Viso .............................................................................. 2000V q e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 250 ±30 5 15 30 –55 ~ +150 –55 ~ +150 Unit V V A A W °C °C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FS5KM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 10V ID = 2A, VGS = 10V ID = 2A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 ±30 — — 2 — — 1.6 — — — — — — — — — Typ. — — — — 3 1.0 2.0 2.5 270 55 10 11 13 32 22 1.5 — Max. — — ±10 1 4 1.3 2.6 — — — — — — — — 2.0 4.17 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω IS = 2A, VGS = 0V Channel to case POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) 40 30 101 7 5 3 2 100 7 5 3 2 10–1 7 5 tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC 20 10 0 0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= TC = 25°C 30W Pulse Test DRAIN CURRENT ID (A) 10 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 5 10V 6V 4 PD= 30W TC = 25°C Pulse Test 5.5V 5V DRAIN CURRENT ID (A) 8 7V 6 6V 4 5V 3 2 2 1 4.5V 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5KM-5 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5 TC = 25°C Pulse Test 4 TC = 25°C Pulse Test 32 24 ID = 10A 16 8A 8 5A 3A 20 3 VGS = 10V 2 20V 1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25°C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC = 25°C DRAIN CURRENT ID (A) 8 6 3 2 100 7 5 3 2 10–1 –1 10 23 5 7 100 75°C 125°C 4 2 0 0 4 8 12 16 20 23 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 3 2 102 7 5 3 2 td(on) 101 7 5 3 2 100 10–1 23 5 7 100 23 5 7 101 tr Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω td(off) tf 3 2 102 7 5 3 2 Coss 101 Crss 7 5 Tch = 25°C f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS5KM-5 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) SOURCE CURRENT IS (A) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VGS = 0V Pulse Test Tch = 25°C ID = 5A 16 VDS = 50V 100V 200V 8 16 TC = 125°C 12 25°C 75°C 4 12 8 4 0 0 4 8 12 16 20 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 0.5 2 0.2 100 7 0.1 5 3 2 10–1 7 5 3 2 1.0 0.8 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (°C)