FT1500AU-240

MITSUBISHI GENERAL USE THYRISTORS FT1500AU-240 HIGH VOLTAGE, HIGH POWER, GENERAL USE DYNAMIC GATE, PRESS PACK TYPE FT1500AU-240 OUTLINE DRAWING 457 ± 10 Dimension in mm GATE (WHITE) φ 4.3 AUXILIARY CATHODE CONNECTOR (RED) 0.4 min φ 3.6 × 0.1 DEPTH 2.2 ± 0.1 φ 105 CATHODE TYPE NAME φ 105 φ 165 max ¡IT(AV) Average on-state current ..................... 1500A ¡VDRM Repetitive peak off state voltage .......12000V ¡Press pack type 0.4 min ANODE φ 3.6 ± 0.1 DEPTH 2.2 ± 0.1 APPLICATION AC switch for high voltage line, SVC ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) Symbol IT(RMS) IT(AV) ITSM1 ITSM 2 It diT/dt PFGM PFG(AV) VFGM VRGM IFGM Tj Tstg — — 2 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Parameter RMS on-state current Average on-state current Surge on-state current Surge on-state current 2 Current-squared, time integration Critical rate of rise of on-state current Peak forward gate power dissipation Average forward gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature Mounting force required Weight Conditions Voltage class 240 12000 12000 9600 12000 12000 9600 Ratings 2360 1500 34 28 4.8 × 100 30 8.0 20 10 6.0 –40 ~ +125 –40 ~ +150 108 ~ 132 4000 106 35 ± 0.5 Unit V V V V V V Unit A A kA kA A2s A/µs W W V V A °C °C kN g Feb.1999 f = 60Hz, sine wave θ = 180°, Tf = 88°C One half cycle at 60Hz One half cycle (tW = 12ms), T j = 125 °C start VFP = 6kV, VRP = 6kV One cycle at 60Hz VD = 1/2VDRM, I G = 2.0A, diG/dt = 1.5A/µs, Tj = 125 °C Recommended value 118 Standard value 7 .5 7.5 MITSUBISHI GENERAL USE THYRISTORS FT1500AU-240 HIGH VOLTAGE, HIGH POWER, GENERAL USE DYNAMIC GATE, PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Symbol I RRM I DRM VTM d v/dt VGT VGD I GT Rth(j-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Test conditions Tj = 125 °C, VRRM Applied Tj = 125 °C, VDRM Applied Tj = 125 °C, I TM = 3000A, Instantaneous measument Tj = 125 °C, VD = 1/2VDRM Tj = 25°C, VD = 6V, RL = 2Ω Tj = 125 °C, VD = 1/2VDRM Tj = 25°C, VD = 6V, RL = 2Ω Junction to fin Min — — — 2000 — 0.2 — — Limits Typ — — — — — — — — Max 1200 1200 4.0 — 2.5 — 350 0.005 Unit mA mA V V/µs V V mA °C/W PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 105 7 Tj = 125°C 5 3 2 104 7 5 3 2 103 7 5 3 2 102 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 50 SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) 40 30 20 10 00 10 23 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7 101 0.006 THERMAL IMPEDANCE (°C/ W) GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 VFGM = 20V PFGM = 30W 0.005 0.004 0.003 0.002 0.001 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) Feb.1999 GATE VOLTAGE (V) PFG(AV) = 8W VGT = 2.5V IGT Tj = 125°C 25°C –40°C VGD = 0.2V IFGM = 6.0A 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) MITSUBISHI GENERAL USE THYRISTORS FT1500AU-240 HIGH VOLTAGE, HIGH POWER, GENERAL USE DYNAMIC GATE, PRESS PACK TYPE ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 10000 FIN TEMPERATURE (°C) θ 180° 120° 90° 60° ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 125 8000 100 θ = 30° 60° 90° 120° 180° 360° RESISTIVE, 6000 INDUCTIVE LOAD 75 4000 θ = 30° 50 θ 360° RESISTIVE, INDUCTIVE LOAD 2000 25 0 0 500 1000 1500 0 0 500 1000 1500 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ON-STATE POWER DISSIPATION (W) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 10000 DC ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 175 FIN TEMPERATURE (°C) 150 125 100 75 50 25 θ = 30° 60° 90° 120° 8000 180° 120° 90° 60° θ = 30° 270° θ 360° RESISTIVE, INDUCTIVE LOAD 6000 4000 θ 270° DC 2000 0 360° RESISTIVE, INDUCTIVE LOAD 180° 0 500 1000 1500 2000 2500 0 0 500 1000 1500 2000 2500 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) 300 GATE TRIGGER CURRENT (mA) GATE TRIGGER VOLTAGE (V) VD = 6V RL = 2Ω DC METHOD GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE (TYPICAL) 3.0 VD = 6V RL = 2Ω DC METHOD 200 2.0 100 1.0 0 –40 –20 20 60 100 140 180 0 –60 –20 20 60 100 140 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI GENERAL USE THYRISTORS FT1500AU-240 HIGH VOLTAGE, HIGH POWER, GENERAL USE DYNAMIC GATE, PRESS PACK TYPE HOLDING CURRENT (mA), LATCHING CURRENT (mA) HOLDING CURRENT LATCHING CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) 3000 2500 2000 TURN-ON TIME VS. GATE CURRENT (TYPICAL) 20 TURN-ON TIME (µs) IH condition : VD = 6V 1500 VARIABLE RESISTANCE IL METHOD IL condition : IG = 1050mA 1000 tgw = 200µs IG IL t VD = 12V 0 500 tgw 15 iG, iA 10 VAK, iG VD 0.1 IGM 0 tgt 0.1VD IH 0 –60 –20 20 60 100 140 5 diG/dt = 1.5A/µs VD = 6000V IGM ITM = 3000A t diT/dt = 100A/µs Tj = 125°C 0 1 2 3 4 5 6 7 8 9 10 JUNCTION TEMPERATURE (°C) GATE CURRENT (A) TURN-OFF TIME VS. JUNCTION TEMPERATURE (TYPICAL) 3000 ITM = 2800A di/dt = –10A/µs VR = 100V VD = 6000V dv/dt = 3V/µs TURN-OFF TIME VS. RATE OF RISE OF OFF-STATE VOLTAGE (TYPICAL) 3000 ITM = 2800A di/dt = –10A/µs VR = 100V VD = 6000V Tj = 80°C TURN-OFF TIME (µs) 2000 TURN-OFF TIME (µs) 2000 1000 VAK, iA + ITM 0 – di/dt VD VR tq dv/dt t 1000 VAK, iA + ITM 0 – di/dt VD VR tq dv/dt t 0 0 50 100 150 00 10 2 3 4 5 7 101 2 3 4 5 7 102 JUNCTION TEMPERATURE (°C) RATE-OF-RISE OF OFF-STATE VOLTAGE (V/µs) REVERSE RECOVERED CHARGE VS. JUNCTION TEMPERATURE (TYPICAL) REVERSE RECOVERED CHARGE VS. RATE OF DECREASE OF ON-STATE CURRENT (TYPICAL) REVERSE RECOVERED CHARGE (µC) REVERSE RECOVERED CHARGE (µC) 10000 3 2 104 7 5 3 2 103 7 5 3 7 100 ITM = 3000A VRM = 150V Tj = 125°C 8000 6000 4000 VAK, iA + 0 – 2000 0 ITM = 3000A di/dt = –10A/µs VRM = 150V t VRM Irm QRR = trr ! Irm 2 VAK, iA ITM di/dt trr + 0 – ITM di/dt trr t VRM Irm QRR = trr ! Irm 2 0 50 100 150 23 5 7 101 23 57 JUNCTION TEMPERATURE (°C) RATE OF DECREASE OF ON-STATE CURRENT (A /µs) Feb.1999