FX20ASJ-06

P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20ASJ-06 HIGH-SPEED SWITCHING USE FX20ASJ-06 OUTLINE DRAWING 1.5 ± 0.2 6.5 5.0 ± 0.2 4 Dimensions in mm 0.5 ± 0.1 5.5 ± 0.2 1.0 max 2.3 min 10 max 1.0 A 0.5 ± 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diode (TYP.) ...........50ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 GATE DRAIN SOURCE DRAIN MP-3 MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings –60 ±20 –20 –80 –20 –20 –80 35 –55 ~ +150 –55 ~ +150 Unit V V A A A A A W °C °C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 0.26 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20ASJ-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –60V, VGS = 0V ID = –1mA, VDS = –10V ID = –10A, VGS = –10V ID = –10A, VGS = –4V ID = –10A, VGS = –10V ID = –10A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –60 — — –1.3 — — — — — — — — — — — — — — Typ. — — — –1.8 73 119 –0.73 10.9 2370 306 147 15 37 131 72 –1.0 — 50 Max. — ±0.1 –0.1 –2.3 97 166 –0.97 — — — — — — — — –1.5 3.57 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –30V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω IS = –10A, VGS = 0V Channel to case IS = –20A, dis/dt = 100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 –102 40 –7 –5 –3 –2 tw = 10µs 100µs 1ms 10ms DC 30 –101 –7 –5 –3 –2 TC = 25°C Single Pulse 20 10 –100 –7 –5 0 0 50 100 150 200 –3 –2 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –50 PD = 35W –8V Tc = 25°C Pulse Test –30 VGS = –10V OUTPUT CHARACTERISTICS (TYPICAL) –20 –6V VGS = –10V Tc = 25°C Pulse Test –4V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) –40 –16 –8V –6V –5V –12 –5V PD = 35W –20 –4V –8 –10 –3V –4 –3V 0 0 –2 –4 –6 –8 –10 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20ASJ-06 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 Tc = 25°C Pulse Test VGS = –4V ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –10 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –8 160 –6 ID = 120 –10V –4 –40A 80 –2 –10A –20A 40 0 –10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 DRAIN CURRENT ID (A) 0 0 –2 –4 –6 –8 –10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) –50 Tc = 25°C VDS = –10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 TC = 25°C 75°C VDS = –10V Pulse Test DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) –40 125°C –30 101 7 5 4 3 2 –20 –10 0 0 –2 –4 –6 –8 –10 100 0 –10 –2 –3 –4 –5 –7–101 –2 –3 –4–5 –7–102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 2 Ciss 3 2 SWITCHING CHARACTERISTICS (TYPICAL) td(off) CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 4 3 2 SWITCHING TIME (ns) Tch = 25°C f = 1MHZ VGS = 0V Coss 102 7 5 4 3 2 tf tr td(on) Tch = 25°C VGS = –10V VDD = –30V RGEN = RGS = 50Ω –2 –3 –4–5 –7 –101 –2 –3 –4–5 102 7 Crss 5 4 3 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 101 7 5 4 3 –5 –7 –100 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20ASJ-06 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 VGS = 0V Pulse Test VDS = –10V GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10 Tch = 25°C ID = –20A SOURCE CURRENT IS (A) –8 –40 TC = –6 –20V –40V –30 125°C 75°C –4 –20 25°C –2 –10 0 0 10 20 30 40 50 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0 7 5 4 3 2 VGS = –10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = –10V ID = –1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) –3.2 –2.4 100 7 5 4 3 2 –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 0.5 2 0.2 7 5 3 2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 100 1.0 0.8 10–1 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (°C)