FX20VSJ-3

P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20VSJ-3 HIGH-SPEED SWITCHING USE FX20VSJ-3 OUTLINE DRAWING 1.5 max 4 Dimensions in mm 4.5 1.3 10.5 max 1.5 max 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 +0.3 –0 1 5 0.8 B 0.5 1 2 3 3 2.6 ± 0.4 • 4V DRIVE • VDSS ............................................................ –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID ................................................................... –20A • Integrated Fast Recovery Diode (TYP.) ........ 100ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 TO-220S MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings –150 ±20 –20 –80 –20 –20 –80 70 –55 ~ +150 –55 ~ +150 4.5 GATE DRAIN SOURCE DRAIN Unit V V A A A A A W °C °C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 1.2 (1.5) P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20VSJ-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –150V, VGS = 0V ID = –1mA, VDS = –10V ID = –10A, VGS = –10V ID = –10A, VGS = –4V ID = –10A, VGS = –10V ID = –10A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –150 — — –1.0 — — — — — — — — — — — — — — Typ. — — — –1.5 0.23 0.25 –2.3 17.5 4470 248 115 15 42 273 114 –1.0 — 100 Max. — ±0.1 –0.1 –2.0 0.29 0.32 –2.9 — — — — — — — — –1.5 1.79 — Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –80V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω IS = –10A, VGS = 0V Channel to case IS = –20A, dis/dt = 100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –2 –102 80 –7 –5 –3 –2 tw = 10µs 100µs 60 –101 –7 –5 –3 –2 40 1ms 10ms 20 –100 –7 –5 0 0 50 100 150 200 DC TC = 25°C –3 Single Pulse –2 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5–7–103 –2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –20 VGS = –10V –8V –6V –4V TC = 25°C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) –10 VGS = –10V –8V –6V –4V –3V TC = 25°C Pulse Test DRAIN CURRENT ID (A) –16 DRAIN CURRENT ID (A) –8 –12 –3V –6 –2.5V –8 PD = 70W –2.5V –4 –4 –2 0 0 –2 –4 –6 –8 –10 0 0 –1.0 –2.0 –3.0 –4.0 –5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20VSJ-3 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 ID = –30A TC = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –10 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) –8 0.4 VGS = –4V –10V –6 –20A 0.3 –4 –10A 0.2 –2 0.1 0 0 –2 –4 –6 –8 –10 00 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) –50 TC = 25°C VDS = –10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = –10V 7 Pulse Test 5 3 2 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) –30 FORWARD TRANSFER ADMITTANCE yfs (S) –40 101 7 5 3 2 –20 –10 0 0 –2 –4 –6 –8 –10 100 0 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 Ciss 3 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 TCh = 25°C VDD = –80V VGS = –10V RGEN = RGS = 50Ω td(off) tf SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 103 7 5 3 2 102 7 5 3 2 td(on) tr Coss Crss 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 101 0 –10 101 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX20VSJ-3 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –20 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10 TCh = 25°C ID = –20A SOURCE CURRENT IS (A) –8 VDS = –50V –80V –100V –16 TC = 125°C 75°C 25°C –6 –12 –4 –8 –2 –4 0 0 20 40 60 80 100 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = –10V 7 ID = 1/2ID 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –4.0 VDS = –10V ID = –1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) –3.2 –2.4 100 7 5 3 2 –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D = 1.0 2 0.5 0 7 0.2 5 3 2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 1.2 10 1.0 0.8 10–1 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (°C)