P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
FX50SMJ-2
OUTLINE DRAWING
15.9 max
Dimensions in mm
4.5 1.5
4
2
2
4
20.0
φ 3.2
5.0
19.5 min
4.4
G
0.6 2.8
1.0
1 2 3
5.45
5.45
4
3
• 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 50mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode (TYP.) .........100ns
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
1
1 2 3 4 24
GATE DRAIN SOURCE DRAIN
TO-3P
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V
Conditions
Ratings –100 ±20 –50 –200 –50 –50 –200 150 –55 ~ +150 –55 ~ +150
Unit V V A A A A A W °C °C g Jan.1999
Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value
4.8
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –100V, VGS = 0V ID = –1mA, VDS = –10V ID = –25A, VGS = –10V ID = –25A, VGS = –4V ID = –25A, VGS = –10V ID = –25A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz
Limits Min. –100 — — –1.0 — — — — — — — — — — — — — — Typ. — — — –1.5 39 47 –0.98 49.2 11130 896 480 57 118 828 380 –1.0 — 100 Max. — ±0.1 –0.1 –2.0 50 61 –1.25 — — — — — — — — –1.5 0.83 —
Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = –50V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω
IS = –25A, VGS = 0V Channel to case IS = –50A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 250 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
–3 –2 tw = 10µs
200
–102
–7 –5 –3 –2
150
–101
–7 –5 –3 –2 TC = 25°C Single Pulse 100µs 1ms 10ms DC
100
50
–100
–7 –5
0
0
50
100
150
200
–3 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) –100
VGS = –10V –8V –6V Tc = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) –50
VGS = –10V –4V –8V –6V –5V PD = 150W –3V
DRAIN CURRENT ID (A)
–80
DRAIN CURRENT ID (A)
–5V
–40
–60
–4V
–30
–40
–3V
–20
–20
PD = 150W
–10
Tc = 25°C Pulse Test
0
0
–2
–4
–6
–8
–10
0
0
–1.0
–2.0
–3.0
–4.0
–5.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –10
Tc = 25°C Pulse Test
–8
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
80
–6
ID = –100A
60
VGS = –4V
–4
–50A –25A
40
–10V Tc = 25°C Pulse Test
–2
20 0 –100
0
0
–2
–4
–6
–8
–10
–2 –3
–5 –7–101
–2 –3
–5 –7–102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS (TYPICAL) –100 102
7 5
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL)
TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
–80
Tc = 25°C VDS = –10V Pulse Test
3 2
–60
101
7 5 3 2
VDS = –10V Pulse Test
–40
–20
0
0
–2
–4
–6
–8
–10
100 0 –10
–2 –3
–5 –7–101
–2 –3
–5 –7–102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
2 Ciss 2
SWITCHING CHARACTERISTICS (TYPICAL)
104
103
td(off)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
7 5 3 2
Tch = 25°C VGS = 0V f = 1MHZ
7 5 3 Tch = 25°C 2 VGS = –10V VDD = –50V 102 RGEN = RGS = 50Ω 7 5 3 2 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 tf
103
7 5 3 2
tr td(on)
Coss
Crss –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102 –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Jan.1999
P
ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –100
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
–10
SOURCE CURRENT IS (A)
–8
VDS = –20V –40V
–80
TC = 25°C
–6
–60
75°C 125°C
–4
–80V Tch = 25°C ID = –50A
–40
VGS = 0V Pulse Test
–2
–20
0
0
40
80
120
160
200
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0
7 5 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
–3.2
VDS = –10V ID = –1mA
–2.4
100
7 5 3 2 VGS = –10V ID = 1/2ID Pulse Test
–1.6
–0.8
10–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101
7 5 3 2
1.2
100 D = 1.0
7 5 3 2 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM
tw T D= tw T
1.0
VGS = 0V ID = –1mA
0.8
10–1
7 5 3 2
0.6
0.4
–50
0
50
100
150
10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999
CHANNEL TEMPERATURE Tch (°C)
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