FX6KMJ-2

P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6KMJ-2 HIGH-SPEED SWITCHING USE FX6KMJ-2 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 23 3 • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.58Ω • ID ...................................................................... –6A • Integrated Fast Recovery Diode (TYP.) ...........80ns • Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.6 ± 0.2 1 1 GATE 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings –100 ±20 –6 –24 –6 –6 –24 20 –55 ~ +150 –55 ~ +150 2000 2.0 4.5 ± 0.2 Unit V V A A A A A W °C °C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6KMJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –100V, VGS = 0V ID = –1mA, VDS = –10V ID = –3A, VGS = –10V ID = –3A, VGS = –4V ID = –3A, VGS = –10V ID = –3A, VDS = –5V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –100 — — –1.0 — — — — — — — — — — — — — — Typ. — — — –1.5 0.46 0.55 –1.38 4.7 1110 108 44 9 8 72 33 –1.0 — 80 Max. — ±0.1 –0.1 –2.0 0.58 0.72 –1.74 — — — — — — — — –1.5 6.25 — Unit V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –50V, ID = –3A, VGS = –10V, RGEN = RGS = 50Ω IS = –3A, VGS = 0V Channel to case IS = –6A, dis/dt = 100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –7 –5 –3 –2 10ms 100µs tw = 10µs 32 –102 –7 –5 –3 –2 1ms 24 16 –101 –7 –5 –3 –2 TC = 25°C Single Pulse 8 DC 0 –100 0 50 100 150 200 –7 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –10 VGS = –10V –5V –4V –3.5V –6 –3V –4 PD = 20W –2 –2.5V OUTPUT CHARACTERISTICS (TYPICAL) –5.0 Tc = 25°C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) –8 –4.0 VGS = –10V –5V –4V –3V –3.0 PD = 20W –2.0 –3.5V –2.5V –1.0 0 0 –4 –8 –12 –16 –20 0 0 –2 –4 –6 –8 –10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6KMJ-2 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 VGS = ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –20 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) –16 0.8 –4V –10V –12 ID = –12A 0.6 –8 0.4 Tc = 25°C Pulse Test –4 –6A –3A 0.2 0 0 –2 –4 –6 –8 –10 0 –10–1 –2 –3 –5 –7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) –20 101 7 5 4 3 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) TC = 75°C 25°C 125°C DRAIN CURRENT ID (A) –12 –8 Tc = 25°C VDS = –10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) –16 100 7 5 4 3 2 –4 VDS = –5V Pulse Test 0 0 –2 –4 –6 –8 –10 10–1 –7 –1 –10 –2 –3 –4–5 –7–100 –2 –3 –4–5 –7 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Ciss 5 3 SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VGS = –10V VDD = –50V RGEN = RGS = 50Ω td(off) 103 CAPACITANCE Ciss, Coss, Crss (pF) 7 5 4 3 2 SWITCHING TIME (ns) 2 102 7 5 Tch = 25°C f = 1MHZ VGS = 0V Coss tf 3 2 td(on) 102 7 5 4 3 Crss 101 7 5 –7 –10–1 tr –2 –3 –5 –7 –100 –2 –3 –5 –7 2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX6KMJ-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –20 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10 Tch = 25°C ID = –6A SOURCE CURRENT IS (A) –8 VDS = –20V –16 TC = 25°C 75°C 125°C –6 –50V –80V –12 –4 –8 –2 –4 0 0 4 8 12 16 20 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0 7 5 4 3 2 VGS = –10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = –10V ID = –1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) –3.2 –2.4 100 7 5 4 3 2 –1.6 –0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 1.2 101 3 2 1.0 7 D = 1.0 5 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.8 100 7 5 3 2 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (°C)