FX70KMJ-03

P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX70KMJ-03 HIGH-SPEED SWITCHING USE FX70KMJ-03 OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 1 23 3 • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ............................................. 12.3mΩ • ID .................................................................... –70A • Integrated Fast Recovery Diode (TYP.) ...........70ns • Viso ................................................................................ 2000V APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 2.6 ± 0.2 1 1 GATE 2 DRAIN 3 SOURCE 2 TO-220FN MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V Conditions Ratings –30 ±20 –70 –280 –70 –70 –280 35 –55 ~ +150 –55 ~ +150 2000 2.0 4.5 ± 0.2 Unit V V A A A A A W °C °C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX70KMJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = –1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –35A, VGS = –10V ID = –26A, VGS = –4V ID = –35A, VGS = –10V ID = –35A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz Limits Min. –30 — — –1.3 — — — — — — — — — — — — — — Typ. — — — –1.8 10.0 19 –0.35 55.8 11140 2300 1000 85 228 751 360 –1.0 — 70 Max. — ±0.1 –0.1 –2.3 12.3 25 –0.43 — — — — — — — — –1.5 3.57 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = –15V, ID = –35A, VGS = –10V, RGEN = RGS = 50Ω IS = –35A, VGS = 0V Channel to case IS = –35A, dis/dt = 50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –103 –7 –5 –3 –2 40 –102 –7 –5 –3 –2 tw = 100µs 1ms 10ms 100ms TC = 25°C Single Pulse 30 20 –101 –7 –5 –3 –2 10 0 0 50 100 150 200 –100 DC –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) –100 VGS = –10V –8V –6V OUTPUT CHARACTERISTICS (TYPICAL) –50 VGS = –10V –8V PD = 35W –4V –6V –5V DRAIN CURRENT ID (A) –80 PD = 35W –5V DRAIN CURRENT ID (A) –40 –60 –4V –30 –40 Tc = 25°C Pulse Test –20 –3V –20 –10 Tc = 25°C Pulse Test –3V 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX70KMJ-03 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) Tc = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) –2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25°C Pulse Test –1.6 ID = –100A 32 –1.2 24 VGS = –4V –0.8 –70A 16 –10V –0.4 –35A 8 0 –100 –2 –3 –5 –7–101 –2 –3 –5–7 –102 –2 –3 –5 –7–103 DRAIN CURRENT ID (A) 0 0 –2 –4 –6 –8 –10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) –100 DRAIN CURRENT ID (A) Tc = 25°C VDS = –10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = –10V 7 Pulse Test 5 4 3 2 TC = 125°C 75°C 25°C –60 FORWARD TRANSFER ADMITTANCE yfs (S) –80 101 7 5 4 3 2 –40 –20 0 0 –2 –4 –6 –8 –10 100 0 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Tch = 25°C SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 tf td(off) 105 f = 1MHZ 3 2 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 7 VGS = 0V 5 104 7 5 3 2 Ciss tr td(on) 102 7 5 4 3 2 Coss Crss 103 7 5 3 2 –3 –5 –7 –100 –2 –3 –5 –7 –101 –2 –3 101 Tch = 25°C VGS = –10V VDD = –15V RGEN = RGS = 50Ω –5 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102 –2 –3 –5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX70KMJ-03 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –100 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) –10 Tch = 25°C ID = –70A SOURCE CURRENT IS (A) –8 VDS = –10V –20V –25V –80 –6 –60 TC = 25°C 75°C 125°C –4 –40 –2 –20 0 0 40 80 120 160 200 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 –4.0 7 5 4 3 2 VGS = –10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = –10V ID = –1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 50 100 150 –3.2 –2.4 100 7 5 4 3 2 –1.6 –0.8 10–1 –50 0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 2 0.5 1.2 100 0.2 7 5 0.1 3 2 PDM tw 1.0 0.8 10–1 7 5 3 2 0.6 0.05 0.02 0.01 Single Pulse T D= tw T 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (°C)