FY10AAJ-03A

MITSUBISHI Nch POWER MOSFET FY10AAJ-03A HIGH-SPEED SWITCHING USE FY10AAJ-03A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 ‘’“ Œ  Ž SOURCE  GATE  ‘ ’ “ DRAIN  q 4V DRIVE q VDSS .................................................................................. 30V q rDS (ON) (MAX) .......................................................... 13.5mΩ q ID ......................................................................................... 10A ŒŽ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ±20 10 70 10 2.3 9.2 2.0 –55 ~ +150 –55 ~ +150 0.07 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Nch POWER MOSFET FY10AAJ-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 5A, VGS = 4V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 — — 1.0 — — — — — — — — — — — — — — Typ. — — — 1.5 9.5 15 0.095 20 1800 650 280 25 45 125 90 0.75 — 45 Max. — ±0.1 0.1 2.0 13.5 20.0 0.135 — — — — — — — — 1.10 62.5 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 2.3A, VGS = 0V Channel to ambient IS = 2.3A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.5 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 2 102 2.0 7 5 3 2 7 5 3 2 7 5 3 2 tw = 100µs 1ms 10ms 100ms 101 1.5 1.0 100 0.5 10–1 7 5 3 2 TC = 25°C Single Pulse DC 0 0 50 100 150 200 2 3 57100 2 3 57101 2 3 57102 2 3 57103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 4V OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 10V 8V 6V 4V 3.5V TC = 25°C Pulse Test DRAIN CURRENT ID (A) 40 30 VGS = 10V 8V 6V TC = 25°C Pulse Test 3.5V DRAIN CURRENT ID (A) 16 12 3V 20 3V 8 10 PD = 2W 4 PD = 2W 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET FY10AAJ-03A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test 0.8 32 0.6 24 VGS = 4V 10V 0.4 ID = 20A 10A 16 0.2 5A 8 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 50 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) 30 FORWARD TRANSFER ADMITTANCE yfs (S) 40 101 7 5 4 3 2 20 10 0 0 2 4 6 8 10 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 4 3 2 td(off) 103 7 5 3 2 Coss Crss SWITCHING TIME (ns) Ciss CAPACITANCE Ciss, Coss, Crss (pF) 103 tf 7 5 4 3 tr 2 td(on) 102 7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V 101 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) 102 0 10 TCh = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET FY10AAJ-03A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 10 TCh = 25°C ID = 10A VDS = 15V 20V 25V 8 40 6 30 TC = 125°C 75°C 25°C 4 20 2 10 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 10A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 3.2 2.4 100 7 5 3 2 1.6 0.8 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 2 0.5 5 0.1 3 2 0.05 7 5 0.01 3 2 7 Single Pulse 5 3 2 PDM tw T D= tw T 1.2 101 0.2 7 1.0 100 0.02 0.8 0.6 10–1 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (°C)