FY8ACH-02A

MITSUBISHI Nch POWER MOSFET FY8ACH-02A HIGH-SPEED SWITCHING USE FY8ACH-02A OUTLINE DRAWING “  Dimensions in mm 6.0 4.4 Œ 5.0  1.8 MAX. 0.4 1.27 Œ Ž SOURCE   GATE  ‘ ’ “ DRAIN ’“ ‘   q 2.5V DRIVE q VDSS .................................................................................. 20V q rDS (ON) (MAX) ............................................................. 22mΩ q ID ........................................................................................... 8A Œ Ž SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 20 ±10 8 56 8 1.7 6.8 1.8 –55 ~ +150 –55 ~ +150 0.07 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Nch POWER MOSFET FY8ACH-02A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 4V ID = 4A, VGS = 2.5V ID = 8A, VGS = 4V ID = 8A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 20 — — 0.5 — — — — — — — — — — — — — — Typ. — — — 0.9 17 23 0.140 22 1700 510 360 26 85 190 180 0.75 — 100 Max. — ±0.1 0.1 1.3 22 36 0.176 — — — — — — — — 1.1 69.4 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 10V, ID = 4A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.7A, VGS = 0V Channel to ambient IS = 1.7A, dis/dt = –50A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 tw = 10µs 100µs 1ms 1.6 101 7 5 3 2 1.2 10ms 0.8 100 7 5 3 2 7 TC = 25°C DC 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 100ms 0.4 0 10–1 Single Pulse 0 50 100 150 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 5V 4V 3V TC = 25°C Pulse Test 2.5V OUTPUT CHARACTERISTICS (TYPICAL) 20 2V TC = 25°C Pulse Test VGS = 5V 4V 3V 2.5V DRAIN CURRENT ID (A) 40 DRAIN CURRENT ID (A) 16 30 2V 12 20 8 1.5V 10 1.5V PD = 1.8W 4 PD = 1.8W 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET FY8ACH-02A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) TC = 25°C Pulse Test 1.6 32 VGS = 2.5V 1.2 24 4V 0.8 ID = 16A 8A 4A 16 0.4 8 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 1.0 2.0 3.0 4.0 5.0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 50 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25°C 75°C 125°C DRAIN CURRENT ID (A) 30 FORWARD TRANSFER ADMITTANCE yfs (S) 40 101 7 5 4 3 2 20 10 0 0 1.0 2.0 3.0 4.0 5.0 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 4 3 2 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 102 TCh = 25°C 7 VDD = 10V 5 VGS = 4V 4 RGEN = RGS = 50Ω 3 td(off) 2 tf tr 103 7 5 4 3 2 TCh = 25°C f = 1MHZ VGS = 0V 2 3 4 5 7 100 2 3 4 5 7 101 Coss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 101 7 5 4 3 2 Crss td(on) 102 –1 10 100 –1 10 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET FY8ACH-02A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 SOURCE CURRENT IS (A) VGS = 0V Pulse Test 5.0 TCh = 25°C ID = 8A VDS = 7V 10V 15V 4.0 40 3.0 30 2.0 20 TCh = 125°C 75°C 25°C 1.0 10 0 0 8 16 24 32 40 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 4V 7 ID = 8A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 1.6 1.2 100 7 5 3 2 0.8 0.4 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 1.2 101 0.2 7 5 0.1 3 2 PDM tw 1.0 0.8 100 7 5 3 2 0.05 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 –50 0 50 100 150 10–1 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (°C)