GCU08BA-130

MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCU08BA-130 q Symmetrical GCT unit q GCT and gate driver are connected q ITQRM: Repetitive controllable on-state current ........ 800A q IT(AV): Average on-state current ..................... 330A q VDRM: Repetitive peak off-state voltage ....... 6500V q VRRM: Repetitive peak reverse voltage ........ 6500V q Tj: Operation junction temperature ......... 125°C APPLICATION Current source inverters, DC choppers, Induction heaters, DC to DC converter OUTLINE DRAWING Dimensions in mm (208) (104) (160) (120) (48) (46.5) (46.5) (48) (20) 9MAX (80) G G K (165) φ4 DE2 TPG TPX LED4 LED3 LED2 LED1 DE1 80±0.5 K K G (250) (85) (140) 0.2 7± K 160MIN 20MAX 6±0.5 6±0.5 A 14.5±1.3 6±0.5 φ47±0.2 6±0.5 10MIN A PART MAGNIFICATION (13.7) (1.6) (20) (80) 26.2±0.3 10.1±0.9 K G G G K (5) 40MAX Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCT PART MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM V(LTDS) Symbol IT(RMS) IT(AV) ITQRM ITSM I2t diT/dt diR/dt PFGM PRGM PFG(AV) PRG(AV) VFGM VRGM IFGM IRGM Conditions Parameter — Repetitive peak reverse voltage — Non-repetitive peak reverse voltage Repetitive peak off-state voltage Gate driver energized Non-repetitive peak off-state voltage Gate driver energized Long term DC stability voltage Gate driver energized, λ = 100 Fit Parameter RMS on-state current Average on-state current Repetitive controllable on-state current Surge on-state current Current-squared, time integration Critical rate of rise of on-state current Critical rate of rise of reverse recovery current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Conditions Applied for all condition angles f = 60Hz, sinewave θ = 180°, Tf = 62°C VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH (See Fig. 1, 3) Tj = 25/125°C One half cycle at 60Hz, Tj = 125°C start VD = 3000V, IT = 800A, CS = 0.1µF, RS = 10Ω (See Fig. 1, 2) Tj = 25/125°C, f = 60Hz IT = 800A, VR = 3000V, Tj = 25/125°C CS = 0.1µF, RS = 10Ω (See Fig. 4, 5) Voltage class 6500 6500 6500 6500 3600 Ratings 520 330 800 4.8 9.6 × 104 1000 1000 5 17 100 120 10 21 500 800 Unit V V V V V Unit A A A kA A2s A/µs A/µs kW kW W W V V A A ELECTRICAL CHARACTERISTICS Symbol VTM IRRM IDRM IGRM dv/dt tgt td Eon ts Eoff QRR Erec IGT VGT Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-on delay time Turn-on switching energy Storage time Turn-off switching energy Reverse recovery charge Reverse recovery energy Gate trigger current Gate trigger voltage Conditions IT = 400A, Tj = 125°C VRM = 6500V, Tj = 125°C VDM = 6500V, Tj = 125°C, Gata driver energized VRG = 21V, Tj = 125°C VD = 3000V, Tj = 125°C Gate driver energized (Expo. wave) IT = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C CS = 0.1µF, RS = 10Ω (See Fig. 1, 2) IT = 400A, VD = 3000V, di/dt = 1000A/µs (See Fig. 1, 2) CS = 0.1µF, RS = 10Ω, Tj = 125°C IT = 800A, VDM = 3/4 VDRM, VD = 3000V CS = 0.1µF, RS = 10Ω, Tj = 125°C (See Fig. 1, 5) IT = 400A, VDM = 4000V, VD = 3000V CS = 0.1µF, RS = 10Ω, Tj = 125°C (See Fig. 1, 5) VR = 3000V, IT = 400A, di/dt = 1000A/µs CS = 0.1µF, RS = 10Ω, Tj = 125°C (See Fig. 4, 5) VD = 24V, RL = 0.1Ω, Tj = 25°C DC method Min — — — — 3000 — — — — — — — — — Limits Typ — — — — — — — — — — — — — — Max 5.5 250 100 40 — 5 1 0.6 3 2.3 1800 4.4 0.5 1.5 Unit V mA mA mA V/µs µs µs J/P µs J/P µC J/P A V Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GATE DRIVER PART Symbol VGIN PGIN tfd trd — Parameter Power supply voltage Gate power consumption Delay time of on gate current Delay time of off gate current Control signal Conditions DC power supply IT = 420Arms, f = 780Hz, duty = 0.33 Ta = 25°C Ta = 25°C Optical fiber data link Transmitter : HFBR-1521 : Agilent Receiver : HFBR-2521 : Agilent Phoenix contact Type name : MSTB25/2-G-508AU — Min 19 — — Limits Typ 20 — — — — Max 21 35 3.0 3.0 — Unit V W µs µs — — — — Power supply connector Status signal — (Note 1) — — — — — — — MECHANICAL DATA Symbol FM — — — Parameter Mounting force Weight Pole piece diameter (GTC device) ±0.2mm Housing thickness (GTC device) ±0.5mm Conditions — — Min 11.1 — — — Limits Typ 13 1100 47 26 Max 15.8 — — — Unit kN g mm mm THERMAL DATA Symbol Tj Tstg Ta Rt(j-f) Parameter Junction operating temperature Storage temperature Ambient operation temperature Thermal resistance Conditions — — Recommend : ≤ 40°C Junction to Fin Min –10 –10 –10 — Limits Typ — — — — Max 125 60 60 0.025 Unit °C °C °C K/W Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE VD IT VD td tgt ts tfd trd diG/dt IGM IG t(Eoff) = 100µs tw VRG Control signal diGQ/dt IGQ VRG td ; 0VRG ~ 0.9VD tgt ; 0VRG ~ 0.1VD ts ; 0VRG ~ 0.9IT diG/dt ; 0.1IGM ~ 0.9IGM tw ; 0VRG ~ 0.9IGM diGQ/dt ; 0.1IRG ~ 0.9IRG tfd ; 50% on signal ~ 0VRG trd ; 50% off signal ~ 0VRG Integration area for Eoff ; 5%VD ~ until 100µs Fig. 1 Turn-on and Turn-off waveform L Rs VD Cs DUT ANL L (load) VD DUT FWDi Rc Lc CDi Cc Fig. 2 Turn-on test circuit Fig. 3 Turn-off test circuit (With clamp circuit) QRR = (trr× [ IntegrationIRM)/2for Erec ; 0IT ~ until 100µs ] area IT 0 di/dt (0 ~ 50%IRM) 50%IT t(Erec) = 100µs trr ANL Rs L (load) VD DUT Rs Cs DUT Cs 50%IRM 90%IRM VRM VR Fig. 4 Reverse recovery waveform Fig. 5 Turn-off and Reverse recovery test circuit Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Note 1. Status signal 1. Status signal from LED (1) Status signal Status of GCT On state Off state LED 1 (Red) OFF ON LED 2 (Yellow) ON OFF (2) Fault signal Status Normal Fault Fault Fault G-K Normal Normal G-K short G-K short Power Supply 20±1V Voltage down 20±1V Voltage down G-K LED (LED 3) (Green) On Off Off Off PS LED (LED 4) (Green) On Off On Off 2. Status signal from Transmitter (1) Normal operation L (L : Light NL : No light) (2) Fault signal (O/V or U/V) L Control signal (Control board) Control signal (GDU input) Status signal (GDU output) NL L NL L NL Control signal (Control board) Control signal (GDU input) NL L NL L L NL Status signal (GDU output) Normal Fault (3) Fault signal (G-K short) L (4) Fault signal (fiber optic) L Control signal (Control board) Control signal (GDU input) Status signal (GDU output) NL L NL L NL Control signal (Control board) Control signal (GDU input) Status signal (GDU output) NL NL L (Always No light) (Always light) Normal Fault Mar. 2004 MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT GCU08BA-130 HIGH POWER INVERTER USE PRESS PACK TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 104 Eon VS IT (Max) TURN ON SWITCHING ENERGY Eon (J/P) 1.4 ON-STATE CURRENT IT (A) 7 5 3 2 CONDITION di/dt=1000A/µs Cs=0.1µF, Rs=10Ω 1.2 VD=3000V, Tj=125°C 1.0 0.8 0.6 0.4 0.2 0.0 0 200 400 600 800 1000 103 7 5 3 2 102 7 5 3 2 Tj=125°C Tj=25°C 101 0 1 2 3 4 5 6 7 8 9 10 ON-STATE VOLTAGE VTM (V) TURN ON CURRENT IT (A) Eoff VS IT (Max) Erec VS IT (Max) TURN OFF SWITCHING ENERGY Eoff (J/P) 8 CONDITION REVERSE RECOVERY ENERGY Erec (J/P) 10 9 8 7 6 5 4 3 2 1 0 0 CONDITION VR=3000V, Tj=125°C di/dt=1000A/µs Cs=0.1µF, Rs=10Ω 7 6 5 4 3 2 1 0 0 VD=3000V, VDM=VD+2.34×IT Tj=125°C, Cs=0.1µF Rs=10Ω 200 400 600 800 1000 200 400 600 800 1000 TURN OFF CURRENT IT (A) ON-STATE CURRENT IT (A) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 0.035 0.03 0.025 Zth (K/W) 0.02 0.015 0.01 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 TIME (S) Mar. 2004