M2V56D20TP-75

DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION M2S56D20TP is a 4-bank x 16777216-word x 4-bit, M2S56D30TP is a 4-bank x 8388608-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The M2S56D20/30 TP achieves very high speed data rate up to 133MHz, and are suitable for main memory in computer systems. FEATURES - Vdd=Vddq=2.5v±0.2V - Double data rate architecture; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands entered on each positive CLK edge; - data and data mask referenced to both edges of DQS - 4 bank operation controlled by BA0, BA1 (Bank Address) - /CAS latency- 1.5/2.0/2.5 (programmable) - Burst length- 2/4/8 (programmable) - Burst type- sequential / interleave (programmable) - Auto precharge / All bank precharge controlled by A10 - 8192 refresh cycles /64ms (4 banks concurrent refresh) - Auto refresh and Self refresh - Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8) - SSTL_2 Interface - 400-mil, 66-pin Thin Small Outline Package (TSOP II) - FET switch control(/QFC) - JEDEC standard PIN CONFIGURATION (TOP VIEW) x8 VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NU/QFC NC /WE /CAS /RAS /CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 66pin TSOP(II) 7 8 9 10 11 12 13 400mil width x 14 15 875mil length 16 17 18 19 0.65mm 20 Lead Pitch 21 22 23 24 25 ROW 26 A0-12 27 Column 28 A0-9,11(x4) 29 A0-9 (x8) 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 VSS DQ7 VSSQ NC DQ6 VDDQ NC DQ5 VSSQ NC DQ4 VDDQ NC NC VSSQ DQS NC VREF VSS DM /CLK CLK CKE NC A12 A11 A9 A8 A7 A6 A5 A4 VSS MITSUBISHI ELECTRIC 1 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM PIN CONFIGURATION (TOP VIEW) x4 x8 VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ NC NC VDDQ NC NC VDD NU,/QFC NC /WE /CAS /RAS /CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NU,/QFC NC /WE /CAS /RAS /CS NC BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 VSS DQ7 VSSQ NC DQ6 VDDQ NC DQ5 VSSQ NC DQ4 VDDQ NC NC VSSQ DQS NC VREF VSS DM /CLK CLK CKE NC A12 A11 A9 A8 A7 A6 A5 A4 VSS VSS NC VSSQ NC DQ3 VDDQ NC NC VSSQ NC DQ2 VDDQ NC NC VSSQ DQS NC VREF VSS DM /CLK CLK CKE NC A12 A11 A9 A8 A7 A6 A5 A4 VSS 66pin TSOP(II) 400mil width x 875mil length 0.65mm Lead Pitch ROW A0-12 Column A0-9,11(x4) A0-9 (x8) CLK,/CLK CKE /CS /RAS /CAS /WE DQ0-7 DQS DM /QFC Vref : Master Clock : Clock Enable : Chip Select : Row Address Strobe : Column Address Strobe : Write Enable : Data I/O : Data Strobe : Write Mask : FET Switch Control : Reference Voltage A0-12 BA0,1 Vdd VddQ Vss VssQ : Address Input : Bank Address Input : Power Supply : Power Supply for Output : Ground : Ground for Output MITSUBISHI ELECTRIC 2 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM DQ0 - 7 /QFC DQS BLOCK DIAGRAM DLL I/O Buffer QFC&QS Buffer Memory Array Bank #0 Memory Array Bank #1 Memory Array Bank #2 Memory Array Bank #3 Mode Register Control Circuitry Address Buffer Clock Buffer A0-12 BA0,1 CLK,/CLK CKE Control Signal Buffer /CS /RAS /CAS /WE DM Type Designation Code M 2 S 56 D 3 0 This rule is applied to only Synchronous DRAM family. TP Speed Grade 10: 125MHz@CL=2.5,100MHz@CL=2.0 75: 133MHz@CL=2.5,100MHz@CL=2.0 Package Type TP: TSOP(II) Process Generation Function Reserved for Future Use Organization 2n 2: x4, 3: x8 DDR Synchronous DRAM Density 56: 256M bits Interface V:LVTTL, S:SSTL_3, _2 Memory Style (DRAM) Mitsubishi Main Designation MITSUBISHI ELECTRIC 3 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM PIN FUNCTION SYMBOL TYPE DESCRIPTION Clock: CLK and /CLK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CLK and negative edge of /CLK. Output (read) data is referenced to the crossings of CLK and /CLK (both directions of crossing). Clock Enable: CKE controls internal clock. When CKE is low, internal clock for the following cycle is ceased. CKE is also used to select auto / self refresh. After self refresh mode is started, CKE becomes asynchronous input. Self refresh is maintained as long as CKE is low. Chip Select: When /CS is high, any command means No Operation. Combination of /RAS, /CAS, /WE defines basic commands. A0-12 specify the Row / Column Address in conjunction with BA0,1. The Row Address is specified by A0-12. The Column Address is specified by A0-9,11(x4) and A0-9(x8). A10 is also used to indicate precharge option. When A10 is high at a read / write command, an auto precharge is performed. When A10 is high at a precharge command, all banks are precharged. Bank Address: BA0,1 specifies one of four banks to which a command is applied. BA0,1 must be set with ACT, PRE, READ, WRITE commands. Data Input/Output: Data bus Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. FET Control: Optional. Output during every Read and Write access. Can be used to control isolation switches on modules. Open drain output. Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. Power Supply for the memory array and peripheral circuitry. VddQ and VssQ are supplied to the Output Buffers only. SSTL_2 reference voltage. CLK,/CLK Input CKE Input /CS /RAS, /CAS, /WE Input Input A0-12 Input BA0,1 DQ0-7(x8), DQ0-3(x4) DQS Input Input / Output Input / Output /QFC Output DM Vdd, Vss VddQ, VssQ Vref Input Power Supply Power Supply Input MITSUBISHI ELECTRIC 4 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM BASIC FUNCTIONS The M2S56D20/30TP provides basic functions, bank (row) activate, burst read / write, bank (row) precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS and /WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and precharge option, respectively. To know the detailed definition of commands, please see the command truth table. /CLK CLK /CS /RAS /CAS /WE CKE A10 Chip Select : L=select, H=deselect Command Command Command Refresh Option @refresh command Precharge Option @precharge or read/write command define basic commands Activate (ACT) [/RAS =L, /CAS =/WE =H] ACT command activates a row in an idle bank indicated by BA. Read (READ) [/RAS =H, /CAS =L, /WE =H] READ command starts burst read from the active bank indicated by BA. First output data appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (autoprecharge,READA) Write (WRITE) [/RAS =H, /CAS =/WE =L] WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write (autoprecharge, WRITEA). Precharge (PRE) [/RAS =L, /CAS =H, /WE =L] PRE command deactivates the active bank indicated by BA. This command also terminates burst read /write operation. When A10 =H at this command, all banks are deactivated (precharge all, PREA). Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H] REFA command starts auto-refresh cycle. Refresh address including bank address are generated internally. After this command, the banks are precharged automatically. MITSUBISHI ELECTRIC 5 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM COMMAND TRUTH TABLE COMMAND Deselect No Operation Row Address Entry & Bank Activate Single Bank Precharge Precharge All Banks Column Address Entry & Write Column Address Entry & Write with Auto-Precharge Column Address Entry & Read Column Address Entry & Read with Auto-Precharge Auto-Refresh Self-Refresh Entry Self-Refresh Exit Burst Terminate Mode Register Set MNEMONIC DESEL NOP ACT PRE PREA WRITE CKE n-1 H H H H H H CKE n X X X X X X /CS H L L L L L /RAS X H L L L H /CAS X H H H H L /WE BA0,1 X H H L L L X X V V X V A10 /AP X X V L H L A0-9, note 11-12 X X V X X V WRITEA H X L H L L V H V READ H X L H L H V L V READA REFA REFS REFSX TERM MRS H H H L L H H X H L H H X X L L L H L L L H L L X H H L L L L X H H L H H H X H L L V X X X X X L H X X X X X L V X X X X X V 1 2 H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number NOTE: 1. Applies only to read bursts with autoprecharge disabled; this command is undefined (and should not be used) for read bursts with autoprecharge enabled, and for write bursts. 2. BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A11 provide the opcode to be written to the selected Mode Register. MITSUBISHI ELECTRIC 6 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM FUNCTION TRUTH TABLE Current State IDLE /CS H L L L L L L L ROW ACTIVE H L L L L L L L L READ (AutoPrecharge Disabled) H L L L /RAS /CAS /WE X H H H L L L L X H H H H L L L L X H H H X H H L H H L L X H H L L H H L L X H H L X H L X H L H L X H L H L H L H L X H L H X X BA BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X X BA BA, CA, A10 BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X X BA BA, CA, A10 Address Command DESEL NOP TERM NOP NOP ILLEGAL 2 2 4 5 5 Action Notes READ / WRITE ILLEGAL ACT PRE / PREA REFA MRS DESEL NOP TERM READ / READA WRITE / WRITEA ACT PRE / PREA REFA MRS DESEL NOP TERM Bank Active, Latch RA NOP Auto-Refresh Mode Register Set NOP NOP NOP Begin Read, Latch CA, Determine Auto-Precharge Begin Write, Latch CA, Determine Auto-Precharge Bank Active / ILLEGAL Precharge / Precharge All ILLEGAL ILLEGAL NOP (Continue Burst to END) NOP (Continue Burst to END) Terminate Burst 2 L L L L L H L L L L L H H L L L H L H L BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add Terminate Burst, Latch CA, READ / READA Begin New Read, Determine Auto-Precharge WRITE ILLEGAL WRITEA ACT PRE / PREA REFA MRS Bank Active / ILLEGAL Terminate Burst, Precharge ILLEGAL ILLEGAL 3 2 MITSUBISHI ELECTRIC 7 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM FUNCTION TRUTH TABLE (continued) Current State WRITE (AutoPrecharge Disabled) /CS H L L L /RAS /CAS /WE X H H H X H H L X H L H X X BA BA, CA, A10 Address Command DESEL NOP TERM Action NOP (Continue Burst to END) NOP (Continue Burst to END) ILLEGAL 3 Notes Terminate Burst, Latch CA, READ / READA Begin Read, Determine AutoPrecharge WRITE / WRITEA ACT PRE / PREA REFA MRS DESEL NOP TERM Terminate Burst, Latch CA, Begin Write, Determine AutoPrecharge Bank Active / ILLEGAL Terminate Burst, Precharge ILLEGAL ILLEGAL NOP (Continue Burst to END) NOP (Continue Burst to END) ILLEGAL L L L L L READ with AUTO PRECHARGE H L L L L L L L L WRITE with AUTO PRECHARGE H L L L L L L L L H L L L L X H H H H L L L L X H H H H L L L L L H H L L X H H L L H H L L X H H L L H H L L L H L H L X H L H L H L H L X H L H L H L H L BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X X BA BA, CA, A10 BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X X BA BA, CA, A10 BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add 3 2 READ / READA ILLEGAL WRITE / WRITEA ACT PRE / PREA REFA MRS DESEL NOP TERM WRITE / WRITEA ACT PRE / PREA REFA MRS ILLEGAL Bank Active / ILLEGAL PRECHARGE/ILLEGAL ILLEGAL ILLEGAL NOP (Continue Burst to END) NOP (Continue Burst to END) ILLEGAL 2 2 READ / READA ILLEGAL ILLEGAL Bank Active / ILLEGAL PRECHARGE/ILLEGAL ILLEGAL ILLEGAL 2 2 MITSUBISHI ELECTRIC 8 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM FUNCTION TRUTH TABLE (continued) Current State PRE CHARGING /CS H L L L L L L L ROW ACTIVATING H L L L L L L L WRITE RECOVERING H L L L L L L L /RAS /CAS /WE X H H H L L L L X H H H L L L L X H H H L L L L X H H L H H L L X H H L H H L L X H H L H H L L X H L X H L H L X H L X H L H L X H L X H L H L X X BA BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X X BA BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X X BA BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add Address Command DESEL NOP TERM Action NOP (Idle after tRP) NOP (Idle after tRP) ILLEGAL 2 2 2 4 Notes READ / WRITE ILLEGAL ACT PRE / PREA REFA MRS DESEL NOP TERM ILLEGAL NOP (Idle after tRP) ILLEGAL ILLEGAL NOP (Row Active after tRCD) NOP (Row Active after tRCD) ILLEGAL 2 2 2 2 READ / WRITE ILLEGAL ACT PRE / PREA REFA MRS DESEL NOP TERM ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP NOP ILLEGAL 2 2 2 2 READ / WRITE ILLEGAL ACT PRE / PREA REFA MRS ILLEGAL ILLEGAL ILLEGAL ILLEGAL MITSUBISHI ELECTRIC 9 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM FUNCTION TRUTH TABLE (continued) Current State REFRESHING /CS H L L L L L L L MODE REGISTER SETTING H L L L L L L L /RAS /CAS /WE X H H H L L L L X H H H L L L L X H H L H H L L X H H L H H L L X H L X H L H L X H L X H L H L X X BA BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X X BA BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add Address Command DESEL NOP TERM Action NOP (Idle after tRC) NOP (Idle after tRC) ILLEGAL Notes READ / WRITE ILLEGAL ACT PRE / PREA REFA MRS DESEL NOP TERM ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP (Idle after tRSC) NOP (Idle after tRSC) ILLEGAL READ / WRITE ILLEGAL ACT PRE / PREA REFA MRS ILLEGAL ILLEGAL ILLEGAL ILLEGAL ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation NOTES: 1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle. 2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of that bank. 3. Must satisfy bus contention, bus turn around, write recovery requirements. 4. NOP to bank precharging or in idle state. May precharge bank indicated by BA. 5. ILLEGAL if any bank is not idle. ILLEGAL = Device operation and/or data-integrity are not guaranteed. MITSUBISHI ELECTRIC 10 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM FUNCTION TRUTH TABLE for CKE Current State SELFREFRESH CKE CKE n-1 n H L L L L L L POWER DOWN H L L ALL BANKS IDLE H H H H H H H L ANY STATE other than listed above H H L L X H H H H H L X H L H L L L L L L X H L H L /CS /RAS /CAS /WE Add X H L L L L X X X X X L H L L L L X X X X X X X H H H L X X X X X L X H H H L X X X X X X X H H L X X X X X X L X H H L X X X X X X X X H L X X X X X X X H X H L X X X X X X X X X X X X X X X X X X X X X X X X X X X X X INVALID Exit Self-Refresh (Idle after tRC) Exit Self-Refresh (Idle after tRC) ILLEGAL ILLEGAL ILLEGAL NOP (Maintain Self-Refresh) INVALID Exit Power Down to Idle NOP (Maintain Self-Refresh) Refer to Function Truth Table Enter Self-Refresh Enter Power Down Enter Power Down ILLEGAL ILLEGAL ILLEGAL Refer to Current State =Power Down Refer to Function Truth Table Begin CLK Suspend at Next Cycle Exit CLK Suspend at Next Cycle Maintain CLK Suspend 3 3 2 2 2 2 2 2 2 2 Action Notes 1 1 1 1 1 1 1 ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care NOTES: 1. CKE Low to High transition will re-enable CLK and other inputs asynchronously . A minimum setup time must be satisfied before any command other than EXIT. 2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State. 3. Must be legal command. MITSUBISHI ELECTRIC 11 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM SIMPLIFIED STATE DIAGRAM POWER APPLIED POWER ON PREA PRE CHARGE ALL REFS SELF REFRESH MRS REFSX REFA MODE REGISTER SET MRS IDLE AUTO REFRESH CKEL CKEH Active Power Down CKEH ACT CKEL POWER DOWN ROW ACTIVE WRITE WRITE WRITEA READA READ READ READ BURST STOP WRITE READ TERM WRITEA READA READA WRITEA PRE PRE PRE READA PRE CHARGE Automatic Sequence Command Sequence MITSUBISHI ELECTRIC 12 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM POWER ON SEQUENCE Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM from damaged or multifunctioning. 1. Apply VDD before or the same time as VDDQ 2. Apply VDDQ before or at the same time as VTT & Vref 3. Maintain stable condition for 200us after stable power and CLK, apply NOP or DSEL 4. Issue precharge command for all banks of the device 5. Issue EMRS 6. Issue MRS 7. Issue 2 or more Auto Refresh commands 8. Maintain stable condition for 200 cycle After these sequence, the SDRAM is idle state and ready for normal operation. MODE REGISTER Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode register (MRS). The mode register stores these data until the next MRS command, which may be issued when both banks are in idle state. After tRSC from a MRS command, the DDR SDRAM is ready for new command. BA1 BA0 A11 A10 A9 0 0 0 0 0 A8 DR A7 A6 0 A5 A4 A3 A2 BT A1 A0 BL CLK /CLK /CS /RAS /CAS /WE BA0 LTMODE BA1 A11-A0 BL 000 001 010 011 100 101 110 111 0 1 BT= 0 R 2 4 8 R R R R Sequential Interleaved V CL 000 001 010 011 100 101 110 111 NO YES /CAS Latency R R 2 R R 1.5 2.5 R Burst Length Latency Mode BT= 1 R 2 4 8 R R R R Burst Type DLL Reset 0 1 R: Reserved for Future Use MITSUBISHI ELECTRIC 13 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM EXTENDED MODE REGISTER DLL disable / enable mode can be programmed by setting the extended mode register (EMRS). The extended mode register stores these data until the next EMRS command, which may be issued when all banks are in idle state. After tRSC from a EMRS command, the DDR SDRAM is ready for new command. CLK /CLK /CS /RAS /CAS /WE BA1 BA0 A11 A10 A9 0 1 0 0 0 A8 0 A7 A6 0 0 A5 0 A4 A3 0 A2 A1 A0 BA0 BA1 A11-A0 V 0 QFC DS DD DLL Disable 0 1 DLL enable DLL disable Drive Strength 0 1 Normal Weak QFC 0 1 Disable Enable MITSUBISHI ELECTRIC 14 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM /CLK CLK Command Address DQS DQ CL= 2 BL= 4 Read Y Write Y Q0 Q1 Q2 Q3 D0 D1 D2 D3 /CAS Latency Burst Length Burst Length Initial Address BL A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 0 0 1 1 A0 0 1 0 1 8 0 1 0 1 0 1 4 0 1 0 1 2 2 3 0 1 3 0 1 0 0 1 1 2 4 5 6 7 0 1 5 6 7 0 1 2 6 7 0 1 2 3 7 0 1 2 3 0 0 1 2 3 1 2 3 4 0 1 2 3 1 2 3 4 2 3 4 5 Sequential 3 4 5 6 4 5 6 7 5 6 7 0 Column Addressing Interleaved 6 7 0 1 2 3 4 5 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 0 1 2 3 0 1 1 0 3 2 5 4 7 6 1 0 3 2 1 0 2 3 0 1 6 7 4 5 2 3 0 1 3 2 1 0 7 6 5 4 3 2 1 0 4 5 6 7 0 1 2 3 5 4 7 6 1 0 3 2 6 7 4 5 2 3 0 1 7 6 5 4 3 2 1 0 MITSUBISHI ELECTRIC 15 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM ABSOLUTE MAXIMUM RATINGS Symbol Vdd VddQ VI VO IO Pd Topr Tstg Parameter Supply Voltage Supply Voltage for Output Input Voltage Output Voltage Output Current Power Dissipation Operating Temperature Storage Temperature Ta = 25 °C Conditions with respect to Vss with respect to VssQ with respect to Vss with respect to VssQ Ratings -0.5 ~ 3.7 -0.5 ~ 3.7 -0.5 ~ Vdd+0.5 -0.5 ~ VddQ+0.5 50 1000 0 ~ 70 -65 ~ 150 Unit V V V V mA mW °C °C DC OPERATING CONDITIONS (Ta=0 ~ 70°C, unless otherwise noted) Limits Symbol Vdd VddQ Vref VIH(DC) VIL(DC) VIN(DC) Parameter Supply Voltage Supply Voltage for Output Input Reference Voltage High-Level Input Voltage Low-Level Input Voltage Input Voltage Level, CLK and /CLK Min. 2.3 2.3 1.15 Vref + 0.18 -0.3 -0.3 0.36 Vref - 0.04 Typ. 2.5 2.5 1.25 Max. 2.7 2.7 1.35 VddQ+0.3 Vref - 0.18 VddQ + 0.3 VddQ + 0.6 Vref + 0.04 Unit V V V V V V V V 7 6 5 Notes VID(DC) Input Differential Voltage, CLK and /CLK VTT I/O Termination Voltage CAPACITANCE (Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted) Symbol CI(A) CI(C) CI(K) CI/O Parameter Input Capacitance, address pin Input Capacitance, control pin Input Capacitance, CLK pin I/O Capacitance, I/O, DQS, DM pin VI=1.25v f=100MHz VI=25mVrms Test Condition Limits Min. 2.5 2.5 2.5 4.0 2.5 Max. 3.5 3.5 3.5 5.5 3.5 Unit pF pF pF pF pF Notes 11 11 11 11 11 CO(QF) Output Capacitance, /QFC MITSUBISHI ELECTRIC 16 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM AVERAGE SUPPLY CURRENT from Vdd (Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, Output Open, unless otherwise noted) Symbol Parameter/Test Conditions OPERATING CURRENT: One Bank; Active-Precharge; t RC = t RC MIN; t CK = t CK MIN; DQ, DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle OPERATING CURRENT: One Bank; Active-Read-Precharge; Burst = 2; t RC = t RC MIN; CL = 2.5; t CK = t CK MIN; IOUT= 0 mA;Address and control inputs changing once per clock cycle PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; power-down mode; CKE ≤ VIL (MAX); t CK = t CK MIN Limits(max) -75 -10 Unit Notes IDD0 90 80 mA IDD1 110 100 mA IDD2P 12 12 mA IDLE STANDBY CURRENT: /CS > VIH (MIN); All banks idle; IDD2N CKE > VIH (MIN); t CK = t CK MIN; Address and other control inputs changing once per clock cycle IDD3P ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; power-down mode; CKE ≤ VIL (MAX); t CK = t CK MIN 30 30 mA 15 15 mA ACTIVE STANDBY CURRENT: /CS > VIH (MIN); CKE > VIH (MIN); One bank; Active-Precharge; t RC = t RAS MAX; t CK = t CK MIN; IDD3N DQ,DM and DQS inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle OPERATING CURRENT: Burst = 2; Reads; Continuous burst;One IDD4R bank active; Address and control inputs changing once per clock cycle; CL = 2.5; t CK = t CK MIN; IOUT = 0 mA OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs changing once per clock IDD4W cycle; CL = 2.5; t CK = t CK MIN; DQ, DM and DQS inputs changing twice per clock cycle IDD5 IDD6 AUTO REFRESH CURRENT: t RC = t RFC (MIN) SELF REFRESH CURRENT: CKE≤0.2V 50 50 mA 140 120 mA 120 160 2 100 150 2 mA mA mA 9 AC OPERATING CONDITIONS AND CHARACTERISTICS (Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted) Symbol Parameter/Test Conditions Limits Min. Vref + 0.35 Vref - 0.35 0.7 0.5*VDDQ-0.2 -5 -5 VDDQ + 0.6 0.5*VDDQ+0.2 5 5 Max. Unit V V V V µA µA 7 8 Notes VIH(AC) High-Level Input Voltage (AC) VIL(AC) Low-Level Input Voltage (AC) VID(AC) Input Differential Voltage, CLK and /CLK VIX(AC) Input Crossing Point Voltage, CLK and /CLK IOZ II Off-state Output Current /Q floating Vo=0~VDDQ Input Current / VIN=0 ~ VddQ MITSUBISHI ELECTRIC 17 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM AC TIMING REQUIREMENTS (Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted) AC Characteristics Symbol tAC tCH tCL tCK tDH tDS tDIPW tHZ tLZ tDQSQ tDV tDQSS tDQSH tDQSL tDSS tDSH tMRD tWPST tWPRE tIS tIH tRPST tRPRE tQPST tQPRE tQCK tQOH Parameter DQ Output Valid data delay time from CLK//CLK CLK High level width CLK Low level width CL=2.5 CLK cycle time CL=2 CL=1.5 Input Setup time (DQ,DM) Input Hold time(DQ,DM) DQ and DM input pulse width (for each input) Data-out-high impedance time from CLK//CLK Data-out-low impedance time from CLK//CLK DQ Valid data delay time from DQS DQ and DQS data Valid window Write command to first DQS latching transition DQS input High level width DQS input Low level width DQS falling edge to CLK setup time DQS falling edge hold time from CLK Mode Register Set command cycle time Write postamble Write preamble Input Setup time (address and control) Input Hold time (address and control) Read postamble Read preamble /QFC postamble during reads /QFC preamble during reads /QFC output access time from CLK//CLK, for write /QFC output hold time for writes 1.25 Min. -0.75 -0.75 0.45 0.45 7.5 10 12 0.5 0.5 1.75 -0.75 -0.75 -0.5 0.35 0.75 0.35 0.35 0.2 0.2 15 0 0.4 0.25 1.1 1.1 0.4 0.9 0.4 0.9 0.6 1.1 0.6 1.1 4 2 1.25 0.6 1.25 +0.75 +0.75 +0.5 -75 Max. +0.75 +0.75 0.55 0.55 15 15 15 Min. -0.8 -0.8 0.45 0.45 8 10 12 0.6 0.6 2 -0.8 -0.8 -0.6 0.35 0.75 0.35 0.35 0.2 0.2 15 0 0.4 0.25 1.2 1.2 0.4 0.9 0.4 0.9 0.6 1.1 0.6 1.1 4 2 0.6 1.25 +0.8 +0.8 +0.6 -10 Max. +0.8 +0.8 0.55 0.55 15 15 15 Unit ns ns tCK tCK ns ns ns ns ns ns ns ns ns tCK tCK tCK tCK tCK tCK ns ns tCK tCK ns ns tCK tCK tCK tCK ns ns 16 15 14 14 Notes tDQSCK DQ Output Valid data delay time from CLK//CLK tWPRES Write preamble setup time MITSUBISHI ELECTRIC 18 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM AC TIMING REQUIREMENTS(Continues) (Ta=0 ~ 70°C, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted) AC Characteristics Symbol tRAS tRC tRFC tRCD tRP tRRD tWR tDAL tWTR tXSNR tXSRD tXPNR tXPRD tREFI Row Active time Row Cycle time(operation) Auto Ref. to Active/Auto Ref. command period Row to Column Delay Row Precharge time Act to Act Delay time Write Recovery time Auto Precharge write recovery + precharge time Internal Write to Read Command Delay Exit Self Ref. to non-Read command Exit Self Ref. to -Read command Exit Power down to command Exit Power down to -Read command Average Periodic Refresh interval Parameter Min. 45 65 75 20 20 15 15 35 1 75 200 1 1 7.8 -75 Max. 120,000 Min. 50 70 80 20 20 15 15 35 1 80 200 1 1 7.8 -10 Max. 120,000 Unit ns ns ns ns ns ns ns ns tCK ns tCK tCK tCK us 18 17 Notes Output Load Condition VTT=VREF 10cm DQS DQ VREF 25Ω VOUT Zo=50Ω 50Ω VTT=VREF 50Ω VREF 30pF VREF Output Timing Measurement Reference Point MITSUBISHI ELECTRIC 19 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM Notes 1. All voltages referenced to Vss. 2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK//CK), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals is 1V/ns in the range between VIL(AC) and VIH(AC). 4. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above (below) the DC input LOW (HIGH) level. 5. VREF is expected to be equal to 0.5*VddQ of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/-2% of the DC value. 6. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. 7. VID is the magnitude of the difference between the input level on CLK and the input level on /CLK. 8. The value of VIX is expected to equal 0.5*VddQ of the transmitting device and must track variations in the DC level of the same. 9. Enables on-chip refresh and address counters. 10. IDD specifications are tested after the device is properly initialized. 11. This parameter is sampled. VddQ = +2.5V ±0.2V, Vdd = +2.5V ±0.2V , f = 100 MHz, Ta = 25°C, VOUT(DC) = VddQ/2, VOUT(PEAK TO PEAK) = 25mV. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to facilitate trace matching at the board level). 12. The CLK//CLK input reference level (for timing referenced to CLK//CLK) is the point at which CLK and /CLK cross; the input reference level for signals other than CLK//CLK, is VREF. 13. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE =< 0.3VddQ is recognized as LOW. 14. t HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ), or begins driving (LZ). 15. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 16. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CLK edge. A valid transition is defined as monotonic, and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 17. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 18. tXPRD should be 200 tCLK in the condition of the unstable CLK operation during the power down mode. MITSUBISHI ELECTRIC 20 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM Read Operation /CLK CLK Cmd & Add. tCK tCH tCL tIS tIH VREF Valid Data tDQSCK tRPRE tRPST DQS /QFC DQ Write Operation / tDQSS=max. /CLK CLK DQS tQCK tDQSS tWPRES tWPRE tDSS tQPRE tDV tAC tQPST tDQSQ tWPST /QFC tDQSL tDS tDQSH tDH tQOH(min) DQ Write Operation / tDQSS=min. /CLK CLK DQS tQCK tDQSS tWPRES tWPRE tDQSL tDS tDQSH tDH tQOH(max) tDSH tWPST /QFC DQ MITSUBISHI ELECTRIC 21 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM OPERATIONAL DESCRIPTION BANK ACTIVATE The DDR SDRAM has four independent banks. Each bank is activated by the ACT command with the bank addresses (BA0,1). A row is indicated by the row address A11-0. The minimum activation interval between one bank and the other bank is tRRD. Maximum 2 ACT commands are allowed within tRC,although the number of banks which are active concurrently is not limited. PRECHARGE The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active, the precharge all command (PREA,PRE+A10=H) is available to deactivate them at the same time. After tRP from the precharge, an ACT command to the same bank can be issued. Bank Activation and Precharge All (BL=8, CL=2) /CLK CLK 2 ACT command / tRCmin tRCmin PRE tRAS Xb tRCD Y BL/2 Xb 0 1 Xb tRP Xb ACT Command ACT tRRD ACT READ A0-9,11-12 Xa A10 Xa BA0,1 00 01 00 01 DQS DQ Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7 Precharge all A precharge command can be issued at BL/2 from a read command without data loss. MITSUBISHI ELECTRIC 22 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM READ After tRCD from the bank activation, a READ command can be issued. 1st Output data is available after the /CAS Latency from the READ, followed by (BL-1) consecutive data when the Burst Length is BL. The start address is specified by A11,A9-A0(x4)/A9-A0(x8), and the address sequence of burst data is defined by the Burst Type. A READ command may be applied to any active bank, so the row precharge time (tRP) can be hidden behind continuous output data by interleaving the multiple banks. When A10 is high at a READ command, the auto-precharge(READA) is performed. Any command(READ,WRITE,PRE,ACT) to the same bank is inhibited till the internal precharge is complete. The internal precharge starts at BL/2 after READA. The next ACT command can be issued after (BL/2+tRP) from the previous READA. Multi Bank Interleaving READ (BL=8, CL=2) /CLK CLK Command A0-9,11-12 A10 BA0,1 DQS DQ Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7 Qb0 Qb1 Qb2 Qb3 Qb4 Qb5 Qb7 Qb8 ACT tRCD Xa Xa 00 READ ACT Y 0 00 Xb Xb 10 READ PRE Y 0 10 0 00 Burst Length /CAS latency MITSUBISHI ELECTRIC 23 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM READ with Auto-Precharge (BL=8, CL=2) /CLK CLK BL/2 + tRP Command A0-9,11-12 A10 BA0,1 DQS DQ ACT tRCD Xa Xa 00 READ BL/2 Y 1 00 tRP ACT Xb Xb 00 Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7 Internal precharge start READ Auto-Precharge Timing (BL=8) /CLK CLK Command ACT READ BL/2 CL=2.5 DQ Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7 CL=2 DQ Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7 CL=1.5 DQ Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7 Internal Precharge Start Timing MITSUBISHI ELECTRIC 24 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM WRITE After tRCD from the bank activation, a WRITE command can be issued. 1st input data is set from the WRITE command with data strobe input, following (BL-1) data are written into RAM, when the Burst Length is BL. The start address is specified by A11,A9-A0(x4)/A9-A0(x8), and the address sequence of burst data is defined by the Burst Type. A WRITE command may be applied to any active bank, so the row precharge time (tRP) can be hidden behind continuous input data by interleaving the multiple banks. From the last data to the PRE command, the write recovery time (tWRP) is required. When A10 is high at a WRITE command, the auto-precharge(WRITEA) is performed. Any command(READ,WRITE,PRE,ACT) to the same bank is inhibited till the internal precharge is complete. The next ACT command can be issued after tDAL from the last input data cycle. Multi Bank Interleaving WRITE (BL=8) /CLK CLK Command A0-9,11-12 A10 BA0,1 DQS DQ Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7 Db0 Db1 Db2 Db3 Db4 Db5 Db6 Db7 ACT tRCD Xa Xa 00 WRITE ACT tRCD Ya 0 00 Xb Xb 10 WRITE Yb 0 10 PRE PRE 0 00 0 10 WRITE with Auto-Precharge (BL=8) /CLK CLK Command A0-9,11-12 A10 BA0,1 DQS DQ Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7 ACT tRCD Xa Xa 00 WRITE tDAL Y 1 00 ACT Xb Xb 00 MITSUBISHI ELECTRIC 25 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM BURST INTERRUPTION [Read Interrupted by Read] Burst read operation can be interrupted by new read of any bank. Random column access is allowed. READ to READ interval is minimum 1CLK. Read Interrupted by Read (BL=8, CL=2) /CLK CLK Command A0-9,11 A10 BA0,1 DQS DQ Qai0 Qai1 Qaj0 Qaj1 Qaj2 Qaj3 Qak0 Qak1 Qak2 Qak3 Qak4 Qak5 Qal0 Qal1 Qal2 Qal3 Qal4 Qal5 Qal6 Qal7 READ READ Yi 0 00 Yj 0 00 READ Yk 0 10 READ Yl 0 01 [Read Interrupted by precharge] Burst read operation can be interrupted by precharge of the same bank. READ to PRE interval is minimum 1 CLK. A PRE command to output disable latency is equivalent to the /CAS Latency. As a result, READ to PRE interval determines valid data length to be output. The figure below shows examples of BL=8. Read Interrupted by Precharge (BL=8) /CLK CLK Command DQS DQ Command READ PRE Q0 Q1 Q2 Q3 Q4 Q5 READ PRE CL=2.5 DQS DQ Command DQS DQ Q0 Q1 Q0 Q1 Q2 Q3 READ PRE MITSUBISHI ELECTRIC 26 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM Read Interrupted by Precharge (BL=8) /CLK CLK Command DQS DQ Command READ Q0 Q1 Q2 Q3 Q4 Q5 READ PRE PRE CL=2.0 DQS DQ Command DQS DQ Command DQS DQ Command READ Q0 Q1 Q2 Q3 Q4 Q5 Q0 Q1 Q0 Q1 Q2 Q3 READ PRE READ PRE PRE CL=1.5 DQS DQ Command DQS DQ Q0 Q1 Q0 Q1 Q2 Q3 READ PRE MITSUBISHI ELECTRIC 27 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM [Read Interrupted by Burst Stop] Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval is minimum 1 CLK. A TERM command to output disable latency is equivalent to the /CAS Latency. As a result, READ to TERM interval determines valid data length to be output. The figure below shows examples of BL=8. Read Interrupted by TERM (BL=8) /CLK CLK Command DQS DQ Command READ TERM Q0 Q1 Q2 Q3 Q4 Q5 READ TERM CL=2.5 DQS DQ Command DQS DQ Command DQS DQ Command READ Q0 Q1 Q2 Q3 Q4 Q5 Q0 Q1 Q0 Q1 Q2 Q3 READ TERM READ TERM TERM CL=2.0 DQS DQ Command DQS DQ Q0 Q1 Q0 Q1 Q2 Q3 READ TERM MITSUBISHI ELECTRIC 28 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM [Read Interrupted by Write with TERM] Read Interrupted by TERM (BL=8) /CLK CLK Command READ TERM WRITE CL=2.5 DQS DQ Command READ TERM Q0 Q1 Q2 Q3 D0 D1 D2 D3 D4 D5 WRITE CL=2.0 DQS DQ Command READ Q0 Q1 Q2 Q3 D0 D1 D2 D3 D4 D5 D6 D7 TERM WRITE CL=1.5 DQS DQ Q0 Q1 Q2 Q3 D0 D1 D2 D3 D4 D5 D6 D7 MITSUBISHI ELECTRIC 29 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM [Write interrupted by Write] Burst write operation can be interrupted by write of any bank. Random column access is allowed. WRITE to WRITE interval is minimum 1 CLK. Write Interrupted by Write (BL=8) /CLK CLK Command A0-9,11 A10 BA0,1 DQS DQ Dai0 Dai1 Daj0 Daj1 Daj2 Daj3 Dak0 Dak1 Dak2 Dak3 Dak4 Dak5 Dal0 Dal1 Dal2 Dal3 Dal4 Dal5 Dal6 Dal7 WRITE WRITE Yi 0 00 Yj 0 00 WRITE Yk 0 10 WRITE Yl 0 00 [Write interrupted by Read] Burst write operation can be interrupted by read of the same or the other bank. Random column access is allowed. Internal WRITE to READ command interval(tWTR) is minimum 1 CLK. The input data on DQ at the interrupting READ cycle is "don't care". tWTR is referenced from the first positive edge after the last data input. Write Interrupted by Read (BL=8, CL=2.5) /CLK CLK Command A0-9,11-12 A10 BA0,1 DM tWTR QS DQ Dai0 Dai1 Qaj0 Qaj1 Qaj2 Qaj3 Qaj4 Qaj5 Qaj6 Qaj7 WRITE Yi 0 00 READ Yj 0 00 MITSUBISHI ELECTRIC 30 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM [Write interrupted by Precharge] Burst write operation can be interrupted by precharge of the same or all bank. Random column access is allowed. tWR is referenced from the first positive CLK edge after the last data input. Write Interrupted by Precharge (BL=8, CL=2.5) /CLK CLK Command A0-9,11-12 A10 BA0,1 DM QS DQ Dai0 Dai1 WRITE Yi 0 00 PRE 00 tWR MITSUBISHI ELECTRIC 31 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM [Initialize and Mode Register sets] /CLK CLK Command A0-9,11,12 A10 BA0,1 DQS DQ NOP PRE EMRS MRS PRE AR AR MRS ACT Code Code Xa 1 Code Code 1 Code Xa 10 00 00 Xa tMRD tMRD tRP tRFC tRFC tMRD [AUTO REFRESH] Single cycle of auto-refresh is initiated with a REFA(/CS=/RAS=/CAS=L,/WE=CKE=H) command. The refresh address is generated internally. 8192 REFA cycles within 64ms refresh 256Mbits memory cells. The auto-refresh is performed on 4 banks concurrently. Before performing an auto refresh, all banks must be in the idle state. Auto-refresh to auto-refresh interval is minimum tRFC . Any command must not be supplied to the device before tRFC from the REFA command. Auto-Refresh /CLK CLK /CS /RAS /CAS /WE CKE A0-12 BA0,1 tRFC NOP or DESELECT Auto Refresh on All Banks Auto Refresh on All Banks MITSUBISHI ELECTRIC 32 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM [SELF REFRESH] Self -refresh mode is entered by issuing a REFS command (/CS=/RAS=/CAS=L,/WE=H,CKE=L). Once the self-refresh is initiated, it is maintained as long as CKE is kept low. During the self-refresh mode, CKE is asynchronous and the only enable input, all other inputs including CLK are disabled and ignored, so that power consumption due to synchronous inputs is saved. To exit the self-refresh, supplying stable CLK inputs, asserting DESEL or NOP command and then asserting CKE for longer than tXSNR/tXSRD. Self-Refresh /CLK CLK /CS /RAS /CAS /WE CKE A0-12 BA0,1 X X tXSNR Self Refresh Exit tXSRD Y Y MITSUBISHI ELECTRIC 33 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM [Asynchronous SELF REFRESH] Asynchronous Self -refresh mode is entered by CKE=L within 2 tCLK after issuing a REFA command (/CS=/RAS=/CAS=L,/WE=H). Once the self-refresh is initiated, it is maintained as long as CKE is kept low. During the self-refresh mode, CKE is asynchronous and the only enable input, all other inputs including CLK are disabled and ignored, so that power consumption due to synchronous inputs is saved. To exit the self-refresh, supplying stable CLK inputs, asserting DESEL or NOP command and then asserting CKE for longer than tXSNR/tXSRD. Asynchronous Self-Refresh /CLK CLK /CS /RAS /CAS /WE CKE A0-12 BA0,1 max 2 tCLK tXSNR Self Refresh Exit MITSUBISHI ELECTRIC 34 DDR SDRAM (Rev.0.0) Sep.'99 Preliminary MITSUBISHI LSIs M2S56D20/ 30 TP 256M Double Data Rate Synchronous DRAM [Power DOWN] The purpose of CLK suspend is power down. CKE is synchronous input except during the self-refresh mode. A command at cycle is ignored. From CKE=H to normal function, DLL recovery time is NOT required in the condition of the stable CLK operation during the power down mode. Power Down by CKE /CLK CLK CKE Command PRE NOP Standby Power Down NOP Valid CKE Command ACT NOP Active Power Down tXPNR/ tXPRD NOP Valid [DM CONTROL] DM is defined as the data mask for writes. During writes,DM masks input data word by word. DM to write mask latency is 0. DM Function(BL=8,CL=2) /CLK CLK Command DM DQS DQ D0 D1 D3 D4 D5 D6 D7 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Write READ Don't Care masked by DM=H MITSUBISHI ELECTRIC 35 MITSUBISHI LSIs DDR SDRAM (Rev.0.0) Mitsubishi Electric Corporation puts the maximum effort into making Keep safety first in your circuit designs! semiconductor products better and more reliable,but there is always the possibility M2S56D20/ 30 Sep.'99 Preliminary that trouble may occur with them. Trouble with semiconductors consideration to 256M Double Data Rate Synchronous DRAM safety when making your circuit designs,with appropriate measures such as (i) placement of substitutive,auxiliary circuits,(ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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